Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BJW TRANSISTOR Search Results

    BJW TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BJW TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating


    Original     		PDF 2SD2351 50mA/5mA) 100ms. 50mA/5mA -10mA, 100MHz

    BJW transistor

    Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
    Text: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol


    Original     		PDF 2SD2351 50mA/5mA) 100ms. 50mA/5mA -10mA, 100MHz BJW transistor SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking

    BJW transistor

    Abstract: No abstract text available
    Text: TELEPHONE: 201 376-2922 (212) 227-6005 TELEX: 13-8720 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Germanium Transistors 2M1T92 absolute maximum ratings: (25°C) Voltage Collector to Base Collector to Emitter Emitter to Base Currantt Powtr Vrw, (RUK ^ 10K)


    Original     		PDF 2M1T92 I30MIN BJW transistor

    transistor SMD s72

    Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
    Text: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той


    Original     		PDF OT323 BC818W MUN5131T1. BC846A SMBT3904, MVN5131T1 SMBT3904 OT323 transistor SMD s72 nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p

    12T24

    Abstract: 2012S12 bt 1224 2005S12 2005S24 2005S48 2006S12 2006S24 2006S48 2506S
    Text: Distributed By: E . J. W olfe E nterprises, Inc. - info@ bjw e.com , 800 554-1224, Fax (818) 889-8417 W M m ► W ide 2:1 Input Voltage Range ► Input 7i Filter ► Continuous Short Circuit Protection ► U L 1950 Approved File No. E140645


    OCR Scan     		PDF E140645 MIL-HDBK-217F 4-40X 12T24 2012S12 bt 1224 2005S12 2005S24 2005S48 2006S12 2006S24 2006S48 2506S

    FUJI 1DI 300

    Abstract: 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt
    Text: _ _ - _ 1-Pack BJT I D I 3 Z - 1 • » * ! Outline Drawings 7 - | a « 13^ 21 29 8 8 16 nr POWER TRANSISTOR MODULE : Features • ¡S ii/± High Voltage • y ij — «J ;j- KrtîSc Including Free Wheeling Diode • ASO ^ S i ' Excellent Safe Operating Area


    OCR Scan     		PDF 300Z-100 -300A FUJI 1DI 300 1DI 150 power transistor bjt 1000 a M106 power BJT 60A VEBo-10V fuji 1di fuji 1 pack bjt

    HIGH VOLTAGE ISOLATION DZ 2101

    Abstract: MC68060FE puerto Motorola mc68060rc50 M68060 MC68060 ITT Semiconductors ISS59 MC68060RC50 RTD SENSING CIRCUIT
    Text: M68060UM/AD R ev. I MC68060 MC68LC060 MC68EC060 MICROPROCESSORS USER’S MANUAL M MOTOROLA àââââââââàââààâàlilil Introduction Signal Description Integer Unit Memory Management Unit Caches Floating-Point Unit Bus Operation Exception Processing


    OCR Scan     		PDF M68060UM/AD MC68060 MC68LC060 MC68EC060 MC68EC060 M68060 HIGH VOLTAGE ISOLATION DZ 2101 MC68060FE puerto Motorola mc68060rc50 ITT Semiconductors ISS59 MC68060RC50 RTD SENSING CIRCUIT