28f400 interface
Abstract: intel 28F400 bx-t80 u315 28f400 intel DOC 28f400 BYTE PROGRAM
Text: 28F400BX/BL 28F004BX/BL 28F200BX/BL 28F002BX/BL SPECIFICATION UPDATE Release Date: July 1996 Order Number 297187-008 The 28F400BX/BL, 28F004BX/BL, 28F200BX/BL and 28F002BX/BL may contain design defects or errors known as errata. Characterized errata that may cause the 28F400BX/BL,
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28F400BX/BL
28F004BX/BL
28F200BX/BL
28F002BX/BL
28F400BX/BL,
28F004BX/BL,
28F200BX/BL
28F002BX/BL
28f400 interface
intel 28F400
bx-t80
u315
28f400
intel DOC
28f400 BYTE PROGRAM
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WMV smd transistor
Abstract: smd mk
Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .
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lcd voltmeters
Abstract: LCD 3.5-DIGIT 3.5-DIGIT lcd 1025S-0 lcd Voltmeter 742-BL DPM 2AS LCD200MV dpm 950 3.5 digit lcd
Text: 3.5 Digit LCD, Sub-Miniature, Snap-Fit, Backlit, Low Power DPM 1AS-BL, DPM 2AS-BL and DPM 3AS-BL DPM 3AS-BL DPM 2AS-BL DPM 1AS-BL All dimensions in mm a b c d e DPM 1AS-BL 30.0 18.6 14.0 7.0 2.0 6.0 1.6 6.0 5.5 28.4 x 11.4 1.0 - 2.5 g h depth of pins i j = panel cut-out
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120mm
100mV
lcd voltmeters
LCD 3.5-DIGIT
3.5-DIGIT lcd
1025S-0
lcd Voltmeter
742-BL
DPM 2AS
LCD200MV
dpm 950
3.5 digit lcd
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Untitled
Abstract: No abstract text available
Text: Invisible optoelectronics device Infrared Diode Photo Diode Photo Transistor High power Infrared diode Formore,pleasevisithttp://www.betlux.com Infrared Emitters Part Number Φe （Mw Material BL-LS3528A0S1IRAC BL-LS3528A0S1IRAB BL-LS3528A0S1IRBC BL-LS3528A0S1IRBB
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BL-LS3528A0S1IRAC
BL-LS3528A0S1IRAB
BL-LS3528A0S1IRBC
BL-LS3528A0S1IRBB
BL-LS3528A0S1IRCC
BL-LS3528A0S1IRCB
BL-LS3528A0S1IRCY
BL-LS3528A0S1
BL-LS3528B1S3
BL-LS3528B1S3IRAC
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Untitled
Abstract: No abstract text available
Text: Data Sheet PT7M6418CL/CH /NL/BL-6450CL/CH /NL/BL µp Supervisor |
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PT7M6418CL/CH
/NL/BL-6450CL/CH
100mV
PT0200
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YP-141N
Abstract: YA-501 ys-301 YP-141 N YS-701 zener diodes color coded YP-251 YP-501M yp501 surge absorber
Text: BL SURGE ABSORBER BL mini Surge Absorber BLSA , invented and produced by Japan BL Kogyo INC. , is a series of high-tech electronic components and is fully protected by international patent law . Its patent register number in Japan is HEI 7-16632 ; in USA: 08/378,969 ; in Korean: 2021/1995 ; in China: 94202711.6 . BL Surge
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25MAX)
YP-141N
YA-501
ys-301
YP-141 N
YS-701
zener diodes color coded
YP-251
YP-501M
yp501
surge absorber
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Untitled
Abstract: No abstract text available
Text: MSM CS 22 Metal Line Switches www.schurter.com/PG70 Metal Switch with Ceramic Actuator, Switching Voltage up to 30 VDC / 250 VAC MSM 22 CS BL green MSM 22 CS BL red Description - Momentary switch available in version: Standard ST , with Lettering (LE), with Backlighting (BL)
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com/PG70
2006/95/ECÂ
2006/95/EC
E41515
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Untitled
Abstract: No abstract text available
Text: MSM CS 22 Metal Line Switches www.schurter.com/PG70 Metal Switch with Ceramic Actuator, Switching Voltage up to 30 VDC / 250 VAC MSM 22 CS BL green MSM 22 CS BL red Description - Momentary switch available in version: Standard ST , with Lettering (LE), with Backlighting (BL)
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com/PG70
2006/95/ECÂ
2006/95/EC
E41515
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Untitled
Abstract: No abstract text available
Text: MSM CS 22 Metal Line Switches www.schurter.com/pg70 Metal Switch with Ceramic Actuator, Switching Voltage up to 30 VDC / 250 VAC MSM 22 CS BL green MSM 22 CS BL red Description - Momentary switch available in version: Standard ST , with Lettering (LE), with Backlighting (BL)
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com/pg70
2006/95/EC
E41515
IP69K
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Untitled
Abstract: No abstract text available
Text: MSM CS 22 Metal Line Switches www.schurter.com/pg70 Metal Switch with Ceramic Actuator, Switching Voltage up to 30 VDC / 250 VAC MSM 22 CS BL green MSM 22 CS BL red Description - Momentary switch available in version: Standard ST , with Lettering (LE), with Backlighting (BL)
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com/pg70
2006/95/EC
E41515
E41roswitch
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Untitled
Abstract: No abstract text available
Text: MSM CS 22 Metal Line Switches www.schurter.com/PG70 Metal Switch with Ceramic Actuator, Switching Voltage up to 30 VDC / 250 VAC MSM 22 CS BL green MSM 22 CS BL red Description - Momentary switch available in version: Standard ST , with Lettering (LE), with Backlighting (BL)
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com/PG70
2006/95/ECÂ
2006/95/EC
E41515
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Untitled
Abstract: No abstract text available
Text: MSM CS 22 Metal Line Switches www.schurter.com/pg70 Metal Switch with Ceramic Actuator, Switching Voltage up to 30 VDC / 250 VAC MSM 22 CS BL green MSM 22 CS BL red Description - Momentary switch available in version: Standard ST , with Lettering (LE), with Backlighting (BL)
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com/pg70
2006/95/EC
E41515
E41al
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Untitled
Abstract: No abstract text available
Text: MSM CS 22 Metal Line Switches www.schurter.com/pg70 Metal Switch with Ceramic Actuator, Switching Voltage up to 30 VDC / 250 VAC MSM 22 CS BL green MSM 22 CS BL red Description - Momentary switch available in version: Standard ST , with Lettering (LE), with Backlighting (BL)
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com/pg70
2006/95/ECÂ
2006/95/EC
E41515
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Untitled
Abstract: No abstract text available
Text: MSM CS 22 Metal Line Switches www.schurter.com/PG70 Metal Switch with Ceramic Actuator, Switching Voltage up to 30 VDC / 250 VAC MSM 22 CS BL green MSM 22 CS BL red Description - Momentary switch available in version: Standard ST , with Lettering (LE), with Backlighting (BL)
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com/PG70
2006/95/ECÂ
2006/95/EC
E41515
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PCA9654
Abstract: AN10441 msata tegra 250 tegra 2 UBA3070 interface of IR SENSOR with SPARTAN3 FPGA SC18IM700 demo PCF85134 PCA95xx
Text: BL Interface Products for Enterprise Network and Computing BL-IP, BL IP BU HPMS 1Q11 CONTENT 1 1. Introduction to Business Line Interface Products 2. Interface Products for Enterprise Network & Computing – – – – – I2C C-bus bus GTL DIMM U UART PCI Express
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Untitled
Abstract: No abstract text available
Text: MSM CS 22 Metal Line Switches www.schurter.com/PG70 Metal Switch with Ceramic Actuator, Switching Voltage up to 30 VDC / 250 VAC MSM 22 CS BL green MSM 22 CS BL red Description - Momentary switch available in version: Standard ST , with Lettering (LE), with Backlighting (BL)
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com/PG70
2006/95/ECÂ
2006/95/EC
E41515
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HM514400BS7
Abstract: HM514400BLS7 HM514400BS-7 HM514400BS6 HM514400BZ7 HM514400BLTT7 HM514400BLS-6 HM514400BLS-7 HM514400BS-6 HM514400BZ8
Text: ADE-203-269A Z HM514400B/BL Series HM514400C/CL Series 1,048,576-word x 4-bit Dynamic Random Access Memory Rev. 1.0 Nov. 29, 1994 The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576word × 4-bit. HM514400B/BL, HM514400C/CL have realized higher density, higher performance
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ADE-203-269A
HM514400B/BL
HM514400C/CL
576-word
HM514400B/BL,
HM514400C/CL
576word
HM514400BS7
HM514400BLS7
HM514400BS-7
HM514400BS6
HM514400BZ7
HM514400BLTT7
HM514400BLS-6
HM514400BLS-7
HM514400BS-6
HM514400BZ8
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AD 553 LH
Abstract: LH 531 G 24
Text: CMOS DRAM KM416V254B/BL/BLL 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C tH P C KM416V254B/BL/BLL-6 60ns 17ns 110ns 24ns KM416V254B/BL/BLL-7 70ns 20ns 130ns 29ns KM416V254B/BL/BLL-8
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KM416V254B/BL/BLL
416V254B/BL/BLL
KM416V254B/B
40-LEAD
AD 553 LH
LH 531 G 24
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Untitled
Abstract: No abstract text available
Text: HM514400B/BL Series Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory HM514400BS/BLS Series • DESCRIPTION The Hitachi HM514400B/BL is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514400B/BL has realized higher density, higher performance and various
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HM514400B/BL
576-Word
HM514400BS/BLS
300-mil
20-pin
400-mil
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ZP20
Abstract: HM514400btt
Text: HM514400B/BL Series Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory HM514400BS/BLS Series • DESCRIPTION The Hitachi HM514400B/BL is a CMOS dynamic RAM organized 1,048,576 word x 4-bit. HM514400B/BL has realized higher density, higher performance and various
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HM514400B/BL
576-Word
300-mil
20-pin
400-mil
ZP20
HM514400btt
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Untitled
Abstract: No abstract text available
Text: HM51W4400B/BL Series low Preliminary Power Version 1,048,576-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM51W4400BS/BLS Series The Hitachi HM51W4400B/BL are CM OS dynamic RAM organized as 1,048,576-word x 4-bit. HM51W4400B/BL has realized higher density, higher performance and various
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HM51W4400B/BL
576-word
20-pin
HM51W4400BS/BLS
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gm71c4100
Abstract: 71C4100 GM7IC4100 GM71C4100B/BL
Text: GM71C4100B/BL LG Semicon Co.,Ltd. 4,194,304 W ORDS x 1BIT CMOS DYNAMIC RAM Description Features The GM 71C4100B/BL is the new generation dynamic RAM organized 4,194,304 x 1 bit. G M 71C 4 100B/BL has realized higher density, higher performance and various functions by utilizing
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GM71C4100B/BL
71C4100B/BL
100B/BL
GM71C41
300mil
20pin
400mil
gm71c4100
71C4100
GM7IC4100
GM71C4100B/BL
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Untitled
Abstract: No abstract text available
Text: in ttil « « « « « * 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT 256K x 16, 512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F400BX-TL, 28F400BX-BL
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28F400BX-TL/BL,
28F004BX-TL/BL
x8/x16
28F400BX-TL,
28F400BX-BL
16-bit
32-bit
28F004BX-TL,
28F004BX-BL
16-KB
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M514402
Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 M514402B
Text: O K I Semiconductor MSM5 1 4402B/BL 1,048,576-Word x 4-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514402B/BL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402B/BL is OKI's CMOS silicon gate process technology.
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MSM514402B/BL_
576-Word
MSM514402B/BL
cycles/16ms,
cycles/128ms
SM24D
MSM514402B/BL
M514402
20-PIN
26-PIN
ZIP20-P-400-W1
M514402B
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