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Ampleon BLF6G10LS-200RN RF MOSFET LDMOS 28V SOT502B
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Ampleon BLF6G10LS-200RN:11 RF MOSFET LDMOS 28V SOT502B
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Rochester Electronics	BLF6G10LS-200RN:11		48		1	1 $82.03 10 $82.03 100 $77.11 1000 $69.73 10000 $69.73	Buy Now
Rochester Electronics LLC BLF6G10LS-200RN:11 RF MOSFET LDMOS 28V SOT502B
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DigiKey	BLF6G10LS-200RN:11	Bulk			4	1 - 10 $85.31 100 $85.31 1000 $85.31 10000 $85.31	Buy Now
Ampleon BLF6G10LS-200RN,11 RF MOSFET LDMOS 28V SOT502B
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DigiKey	BLF6G10LS-200RN,11	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	BLF6G10LS-200RN,11		236			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Flip Electronics BLF6G10LS-200RN,11 RF MOSFET LDMOS 65V 1GHZ 1.4A SO
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DigiKey	BLF6G10LS-200RN,11	Reel			5	1 - 10 $117.14 100 $117.14 1000 $117.14 10000 $117.14	Buy Now
Avnet Americas	BLF6G10LS-200RN,11	Reel		13 Weeks	100	1 - 10 - 100 $75.0062 1000 $67.919 10000 $67.919	Buy Now

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BLF6G10LS Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
BLF6G10LS-135R,112	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B	Original	PDF
BLF6G10LS-135R,118	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B	Original	PDF
BLF6G10LS-135RN	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF6G10LS-135RN,11	NXP Semiconductors	BLF6G10LS-135RN - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13"	Original	PDF
BLF6G10LS-135RN:11	NXP Semiconductors	BLF6G10LS-135RN - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack	Original	PDF
BLF6G10LS-160RN	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF6G10LS-160RN,11	NXP Semiconductors	BLF6G10LS-160RN - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack	Original	PDF
BLF6G10LS-160RN:11	NXP Semiconductors	BLF6G10LS-160RN - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13"	Original	PDF
BLF6G10LS-200	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF6G10LS-200,112	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B	Original	PDF
BLF6G10LS-200,118	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B	Original	PDF
BLF6G10LS-200R	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF6G10LS-200R,112	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B	Original	PDF
BLF6G10LS-200R,118	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, IC BASESTATION FINAL SOT502B	Original	PDF

BLF6G10LS-200RN	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF6G10LS-200RN,11	NXP Semiconductors	BLF6G10LS-200RN - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD, 13"	Original	PDF
BLF6G10LS-200RN:11	NXP Semiconductors	BLF6G10LS-200RN - Power LDMOS transistor, SOT502B Package, Standard Marking, IC'S Tube - DSC Bulk Pack	Original	PDF
BLF6G10LS-260PRN	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF6G10LS-260PRN,1	NXP Semiconductors	BLF6G10LS-260PRN - Power LDMOS transistor, SOT539B Package, Standard Marking, Reel Pack, SMD	Original	PDF
BLF6G10LS-260PRN:1	NXP Semiconductors	BLF6G10LS-260PRN - Power LDMOS transistor, SOT539B Package, Standard Marking, Tube - DSC Bulk Pack	Original	PDF

BLF6G10LS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BLF6G10LS-200RN Abstract: BLF6G10-200RN RF35 A1118 Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 A1118	PDF
BLF6G10LS-135RN Abstract: 2360D BLF6G10-135RN RF35 1961 30 TRANSISTOR Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN BLF6G10LS-135RN 2360D RF35 1961 30 TRANSISTOR	PDF
23N50 Abstract: No abstract text available Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN 23N50	PDF
Untitled Abstract: No abstract text available Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10L-260PRN; BLF6G10LS-260PRN BLF6G10L-260PRN LS-260PRN	PDF
Untitled Abstract: No abstract text available Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN	PDF
2360d Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 01 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST	PDF
transistor 9575 Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1	PDF
Untitled Abstract: No abstract text available Text: BLF6G10LS-200 Power LDMOS transistor Rev. 02 — 24 November 2008 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10LS-200 BLF6G10LS-200	PDF
BLF6G10LS-135R Abstract: f4 smd transistor mobile rf power amplifier transistor RF35 2360d Text: BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10LS-135R BLF6G10LS-135R f4 smd transistor mobile rf power amplifier transistor RF35 2360d	PDF
BLF6G10-200RN Abstract: BLF6G10LS-200RN RF35 vj1206y224kxb Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 688 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN BLF6G10LS-200RN RF35 vj1206y224kxb	PDF
BLF6G10LS-160RN Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13	PDF
Untitled Abstract: No abstract text available Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-200RN; BLF6G10LS-200RN BLF6G10-200RN 10LS-200RN	PDF
BLC6G10LS-160 Abstract: BLF6G10LS-200 RF35 Text: BLF6G10LS-200 Power LDMOS transistor Rev. 01 — 18 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10LS-200 BLF6G10LS-200 BLC6G10LS-160 RF35	PDF
vj1206y224kxb Abstract: BLF6G10LS-200R RF35 Text: BLF6G10LS-200R Power LDMOS transistor Rev. 01 — 21 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10LS-200R BLF6G10LS-200R vj1206y224kxb RF35	PDF

Untitled Abstract: No abstract text available Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN	PDF
Untitled Abstract: No abstract text available Text: BLF6G10LS-160 Power LDMOS transistor Rev. 01 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF6G10LS-160 BLF6G10LS-160	PDF
LPC2148 i2c Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.	Original	OT363 SC-88) LPC2148 i2c BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent	PDF
Untitled Abstract: No abstract text available Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.	Original		PDF
BLF4G08LS-160A Abstract: J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A Text: NXP Semiconductors Product Discontinuation DN66 June 30, 2010 SEE DN66 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. FOR ADDED INFORMATION, REFER TO NXP WEB-SITE "http://www.nxp.com/products/eol/"	Original	31-Dec-10 30-Jun-11 UBA2074AT/N1 UBA2074T/N1 UBA2074T/N1 31-Mar-11 UBA2074TS/N1 UBA2074TS/N1 BLF4G08LS-160A J3A080GA4/T0BG1610 MARKING S08 NXP TJA1050T-CM,11 power+wizard+1.1+fault+codes SCC2691AC1A28 IP5004CX6 TDA8275AHN/C1,557 H3-BGA3XX_11 BZA456A	PDF
BFG591 amplifier Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 Text: RF手册第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品恩智浦RF手册令设计更简易恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP	Original	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23	PDF
Pallet VHF Power Amplifier Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market	Original	BLF87x/88x) BLF57x) IS-95 BLF6G38S-25 OT608B BLF6G38-25 OT608A BLF6G38-10 Pallet VHF Power Amplifier BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF	PDF
QUBiC4X Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers	Original	12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr	PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
very simple walkie talkie circuit diagram Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23 Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.	Original	TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23	PDF

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BLF6G10LS Search Results

BLF6G10LS Price and Stock

Ampleon BLF6G10LS-200RN

Ampleon BLF6G10LS-200RN:11

Rochester Electronics LLC BLF6G10LS-200RN:11

Ampleon BLF6G10LS-200RN,11

Flip Electronics BLF6G10LS-200RN,11

BLF6G10LS Datasheets (20)

BLF6G10LS Datasheets Context Search

BLF6G10LS-200RN

BLF6G10LS-135RN

23N50

Untitled

Untitled

2360d

transistor 9575

Untitled

BLF6G10LS-135R

BLF6G10-200RN

BLF6G10LS-160RN

Untitled

BLC6G10LS-160

vj1206y224kxb

Untitled

Untitled

LPC2148 i2c

Untitled

BLF4G08LS-160A

BFG591 amplifier

Pallet VHF Power Amplifier

QUBiC4X

UPC8236

very simple walkie talkie circuit diagram