BLF6G22LS-100 Search Results
BLF6G22LS-100 Price and Stock
Ampleon BLF6G22LS-100,112RF MOSFET LDMOS 28V SOT502B |
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BLF6G22LS-100,112 | Tray |
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Ampleon BLF6G22LS-100,118RF MOSFET LDMOS 28V SOT502B |
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BLF6G22LS-100,118 | Reel |
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NXP Semiconductors BLF6G22LS-100 |
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BLF6G22LS-100 | 47 |
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BLF6G22LS-100 Datasheets (8)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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BLF6G22LS-100 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB | Original | |||
BLF6G22LS-100 |
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BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | Original | |||
BLF6G22LS-100,112 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B | Original | |||
BLF6G22LS-100,118 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B | Original | |||
BLF6G22LS-100,112 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Blister pack | Original | |||
BLF6G22LS-100,112 |
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BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | Original | |||
BLF6G22LS-100,118 |
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" | Original | |||
BLF6G22LS-100,118 |
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BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | Original |