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    BLUE LASER-DIODE GHZ Search Results

    BLUE LASER-DIODE GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BLUE LASER-DIODE GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ic212

    Abstract: TDS7404B LDM639 818-st UV diode 320 nm IC2-15 beam splitter 405 and 635 nm UV diode 100 nm to 280 nm 818-UV 760nm
    Text: iC212 HIGHSPEED PHOTORECEIVER ar y n i im prel Rev A2, Page 1/15 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Fast pulse and transient measurement ♦ Optical triggering ♦ Optical front-end for oscilloscopes Bandwidth DC to 1.4 GHz Si PIN photodiode, Ø 0.4 mm active area diameter


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    PDF iC212 iC212 D-55294 TDS7404B LDM639 818-st UV diode 320 nm IC2-15 beam splitter 405 and 635 nm UV diode 100 nm to 280 nm 818-UV 760nm

    smd diode UJ 64 A

    Abstract: SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI
    Text: PRICE LIST 03/2015 Wiedner Hauptstrasse 76, Vienna, Austria EUR USD Tel: +43-1-586 52 430, Fax: +43-1-586 52 43 44 1,00 1,10182 [email protected], www.roithner-laser.com 2015-06-03 last update 2015-06-03 LASER DIODES - UV EUR USD 1-9 pcs. 1-9 pcs.


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    PDF RLU4116E, RLT390-50CMG, RLT395-50CMG, RLT400-50CMG, TH06-1W, ATU61938489, AT1212 AT3112 smd diode UJ 64 A SLD3237VFR 20/SPL1550-10-9-PD SLD3237VF smd diode UM 08 smd diode UM RLCD-M66H-750 RLT905-30G SLD3236VF RLT6650GLI

    TM 1628 driver display

    Abstract: raychem catalog termination kit and splicing kit 1550nm Laser Diode with butterfly pin package JIS F05 connectors CD laser pickup assembly Laser Diode 808 2 pin 1000 mw transmitter circuit in GPR amphenol 12 pin male circular plug Laser Diode Specifications 1550nm raychem termination kit and splicing kit
    Text: Fiber Optic Products Fiber Optic Products Catalog LIGHT YEARS AHEAD Whether you’re designing local area networks, data centers, communications systems, or equipment, innovative fiberoptic applications begin with innovative fiberoptic products. Tyco Electronics offers an extensive line of fiberoptic products to


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    02LRH

    Abstract: BAR64-03W bar6403w e6327
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


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    PDF BAR64. BAR64-02L BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 02LRH BAR64-03W bar6403w e6327

    Untitled

    Abstract: No abstract text available
    Text: BAR50. Silicon PIN Diodes • Current-controlled RF resistor for switching and attenuating applications • Frequency range above 10 MHz up to 6 GHz • Especially useful as antenna switch in mobile communication • Very low capacitance at zero volt reverse bias


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    PDF BAR50. BAR50-02L BAR50-02V BAR50-03W OD323 BAR50-02L, BAR50-02V,

    marking code TS

    Abstract: BAR64-05
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


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    PDF BAR64. BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W marking code TS

    ESDOP2RF-02LRH E6327

    Abstract: No abstract text available
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


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    PDF BAR64. BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W ESDOP2RF-02LRH E6327

    500mW 808nm infrared laser diode driver circuit

    Abstract: LM358 laser driver SLD323 blue CD laser pickup assembly 2SK405 equivalent 808nm 1W laser diode laser Semicondutor fiber optic Laser diode lm358 lm358 laser current driver DVD optical pick-up assembly
    Text: LASER DI O D E G SONY SEMICONDUCTOR ation U I D E Notes • Responsibility for quality assurance, defect warranties and other items relating to individual transactions shall conform to these sales contracts and other adjunct contracts concluded between the Sony Sales Department or Sony agents and customers.


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    PDF than-60dB. 500mW 808nm infrared laser diode driver circuit LM358 laser driver SLD323 blue CD laser pickup assembly 2SK405 equivalent 808nm 1W laser diode laser Semicondutor fiber optic Laser diode lm358 lm358 laser current driver DVD optical pick-up assembly

    850NM

    Abstract: HFD8104-103 HFD8112-103 10GBPS 1550nm laser diode for 10Gbps PIN photodiode responsivity 1550nm 10Gbps GaAs array, 850nm diode array die VCSEL die TO56 package DIMENSION
    Text: DATA SHEET 10GBPS 850NM PIN PIN ARRAYS HFD81XX-103 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-103 are high performance GaAs PIN detector die arrays ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays


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    PDF 10GBPS 850NM HFD81XX-103 HFD81xx-103 700-870nm HFE80xx-103 1-866-MY-VCSEL HFD8104-103 HFD8112-103 1550nm laser diode for 10Gbps PIN photodiode responsivity 1550nm 10Gbps GaAs array, 850nm diode array die VCSEL die TO56 package DIMENSION

    S/LED 850nm

    Abstract: No abstract text available
    Text: DATA SHEET 10GBPS 850NM PIN PIN ARRAYS HFD81XX-103 FEATURES: High Bandwidth Large Active Area Low Capacitance 4 and 12 channel arrays The HFD81xx-103 are high performance GaAs PIN detector die arrays ideal for use in manufacturing transceivers for parallel optical interconnects. The arrays


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    PDF 10GBPS 850NM HFD81XX-103 HFD81xx-103 700-870nm HFE80xx-103 1-866-MY-VCSEL S/LED 850nm

    Untitled

    Abstract: No abstract text available
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


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    PDF BAR64. BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W

    BAR64-02LRH

    Abstract: BAR64-02V BAR64 BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W
    Text: BAR64. Silicon PIN Diode • High voltage current controlled RF resistor for RF attenuator and switches • Frequency range above 1 MHz up to 6 GHz • Very low capacitance at zero volt reverse bias at frequencies above 1 GHz typ. 0.17 pF • Low forward resistance (typ. 2.1 Ω @ 10 mA)


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    PDF BAR64. BAR64-02LRH BAR64-02V BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-02LRH BAR64-02V BAR64 BAR64-03W BAR64-04 BAR64-04W BAR64-05 BAR64-05W BAR64-06 BAR64-06W

    OL5157M

    Abstract: EAM LD 10 gb laser diode Thermistor bth 100 laser dfb 1550nm 40gb blue Laser-Diode Ghz DFB ea 40Gb
    Text: Drawing No. JOG-01223 Optical Components OL5157M Rev. 3:[10. 2008] Preliminary 1550 nm 40 Gb/s EA Modulator Integrated DFB Laser 1. DESCRIPTION This sheet is defining a target specification of OL5157M, which is a 1550-nm DFB laser diode monolithically integrated with an electro-absorption EA modulator for 40 Gb/s operation in a 7-pin


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    PDF JOG-01223 OL5157M OL5157M, 1550-nm 40Gb/s OL5157M EAM LD 10 gb laser diode Thermistor bth 100 laser dfb 1550nm 40gb blue Laser-Diode Ghz DFB ea 40Gb

    Light Detector laser

    Abstract: short distance measurement ir infrared diode
    Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that


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    PDF KOTH0001E15 Light Detector laser short distance measurement ir infrared diode

    Oki EA modulator

    Abstract: OKI EAM OL5157M Oki EA modulator V connector Oki modulator DFB ea EAM LD Thermistor bth 100 ol515 laser dfb 1550nm 40gb
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    PDF D-41460 Oki EA modulator OKI EAM OL5157M Oki EA modulator V connector Oki modulator DFB ea EAM LD Thermistor bth 100 ol515 laser dfb 1550nm 40gb

    Oki EA modulator

    Abstract: EAM laser OL5157M DFB ea EAM LD OKI EAM 10 gb laser diode Oki EA modulator V connector 1550 laser diode TEC TO CAN laser dfb 1550nm 40gb
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    PDF JOG-01223 OL5157M OL5157M, 1550-nm 40Gb/s Oki EA modulator EAM laser OL5157M DFB ea EAM LD OKI EAM 10 gb laser diode Oki EA modulator V connector 1550 laser diode TEC TO CAN laser dfb 1550nm 40gb

    optical Driver MZ

    Abstract: fiber interferometer bias control etalon wavelength locker AN0136 bookham receiver laser
    Text: 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEG Negative Chirp - High Power The LMC10NEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s high performance regional metro and


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    PDF 10Gb/s LMC10NEG LMC10NEG 14-pin, LMC10 1525nm 21CFR TL9000 ISO9001 FM15040 optical Driver MZ fiber interferometer bias control etalon wavelength locker AN0136 bookham receiver laser

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEG Negative Chirp - High Power The LMC10NEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10


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    PDF 10Gb/s LMC10NEG LMC10NEG 14-pin, LMC10 TL9000 ISO9001 FM15040 ISO4001 EMS35100

    bdl 39

    Abstract: SPC-630 Hamamatsu avalanche diode BDL-473-SMC galvo scanner Picosecond Pulse Labs SPC-730 12V fluo SPC-130 SPC-535
    Text: Becker & Hickl GmbH Technology Leader in Photon Counting Technology Leader in Photon Counting About bh Founded in 1993, Becker & Hickl have introduced a proprietary time-correlated single-photon counting principle that made TCSPC more than 100 times faster than the existing devices. Moreover, bh introduced a multi-dimensional TCSPC process that


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    Mach-Zehnder modulator

    Abstract: etalon locker
    Text: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEG Negative Chirp - High Power The LMC10NEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10


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    PDF 10Gb/s LMC10NEG LMC10NEG 14-pin, LMC10 TL9000 ISO9001 FM15040 ISO4001 EMS35100 Mach-Zehnder modulator etalon locker

    AN0117

    Abstract: AN0142 AN0136 etalon locker LMC10NEH AN0130 mach zehnder interferometer MZ-modulator optical modulator 10Gb/s GR-468
    Text: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10NEG Negative Chirp - High Power The LMC10NEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and negative chirp InP MZ modulator, has been specifically designed for use in 10


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    PDF 10Gb/s LMC10NEG LMC10NEG 14-pin, LMC10 500mW 1620nm 21CFR ISO14001 TL9000 AN0117 AN0142 AN0136 etalon locker LMC10NEH AN0130 mach zehnder interferometer MZ-modulator optical modulator 10Gb/s GR-468

    Untitled

    Abstract: No abstract text available
    Text: BA592/BA892. Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance typ. 0.45 Ω @ 3 mA • small capacitance BA592 BA892/-02L BA892-02V  Type BA592 BA892 BA892-02L BA892-02V Package


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    PDF BA592/BA892. BA592 BA892/-02L BA892-02V BA892 BA892-02L OD323 SCD80

    etalon wavelength locker

    Abstract: DIODE 8069 etalon locker Diode BFM bookham MZ modulator
    Text: Preliminary 10Gb/s Compact InP MZ Modulator with DWDM Laser Features LMC10ZEG • Suitable for 50GHz ITU applications with +/-20pm λ accuracy over life Zero Chirp - High Power The LMC10ZEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and Zero


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    PDF 10Gb/s LMC10ZEG LMC10ZEG 14-pin, LMC10 1525nm 21CFR TL9000 ISO9001 FM15040 etalon wavelength locker DIODE 8069 etalon locker Diode BFM bookham MZ modulator

    AN0142

    Abstract: AN0141 SMF-28 fiber bookham receiver laser bookham LMC10 MZ-modulator AN0117 80C08C 10Gb/s Compact InP MZ Modulator laser driver DFB wavelength locker
    Text: Data Sheet 10Gb/s Compact InP MZ Modulator with DWDM Laser LMC10ZEG Zero Chirp - High Power The LMC10ZEG product, containing the Bookham Ultra High Power Strained Layer DFB laser chip and Zero chirp InP MZ modulator, has been specifically designed for use in 10 Gb/s


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    PDF 10Gb/s LMC10ZEG LMC10ZEG 14-pin, LMC10 500mW 1620nm 21CFR ISO14001 TL9000 AN0142 AN0141 SMF-28 fiber bookham receiver laser bookham LMC10 MZ-modulator AN0117 80C08C 10Gb/s Compact InP MZ Modulator laser driver DFB wavelength locker