Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC blE T> • bM27525 D0342bfl 1BT H N E C E MC-421000A32 1,048,576 X 32-Bit Dynamic CMOS RAM Module JE/ W NEC Electronics Inc. Description Pin Configuration The MC-421000A32 is a fast-page dynamic RAM module organized as 1,048,576 words by 32 bits and de
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MC-421000A32
h427SES
GD34E
MC-421000A32
21000A
rtrnnnnnnnnnnnnnnnnnnnnnnnnInnnnnnr17
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HPB100474E
Abstract: JJPB100474E JUPB100474E nec A2C
Text: N E C ELECTRONICS INC blE D NEC NEC Electronics Inc. bM27525 GG3S37b G73 « N E C E jjPB100474E 1024 X 4-Bit 100K ECL RAM Description Pin Configurations The /JPB100474E is a very-high-speed 100K in terface ECL RAM organized as 1024 words by 4 bits and designed w ith noninverted, o pen -em itter o utputs and
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uPB100474E
/JPB100474E
24-Pin
iPB100474E
1024-word
b427S2S
JHPB100474E
63IH4164B
-6144B
HPB100474E
JJPB100474E
JUPB100474E
nec A2C
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Untitled
Abstract: No abstract text available
Text: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features
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bM2752S
0034G34
42S16160
42S17160
42S18160
4217/42S17,
WD-747W
jjPD421
160/L,
160/L
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mPC1277H
Abstract: PC1277H MPC1277 12-pin stereo amplifier upc1277h 1277H pc1277 Audio Power Amplifiers audio power amplifier diagram ic audio amplifier
Text: N E C ELECTRONICS INC 72 DEI bM2752S □□□flbbb M ^ 4 _0<3 ^ B IP O L A R A N A L O G INTEGRATED C IR C U IT ix P C 1 2 7 7 H 4.2 W D U A L A U D IO P O W E R A M P L IF IE R DESCRIPTION The PC1277H is a dual audio power a m p lifie r designed fo r a stereo radio cassette and in a 12-pin power single in line plastic
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bM2752S
uPC1277H
12-pin
1277H
PC1277H
mPC1277H
MPC1277
12-pin stereo amplifier
pc1277
Audio Power Amplifiers
audio power amplifier diagram
ic audio amplifier
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D7821
Abstract: KBR-12 d78213cw d78213gc d78214 D78213 PD78212CW
Text: bM27525 004305b tSb NEC Electronics Inc. «NECE pPD78214 Family MPD78212/213/214/P214 8' Bît»K-Series Microcontrollers With A/D Converter, Real-Time Output Ports _ Description The ¿/PD78212, /JPD78213, pPD78214, and ¿(PD78P214
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bM27525
004305b
uPD78214
uPD78212
uPD78213
uPD78P214
/PD78212,
/JPD78213,
pPD78214,
D7821
KBR-12
d78213cw
d78213gc
d78214
D78213
PD78212CW
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DA736
Abstract: 24pin 2k 64 da73 D-A73
Text: N E C ELECTRONICS INC jm jm i M LIE D NEC Electronics Inc. • bM2752S 0033*153 1Û7 « N E C E PPD4216102, 4217102 16,777,216 X 1-Bit Dynamic CMOS RAM Advance Information Description The/¿PD4216102 and the ¿/PD4217102 are static-column dynamic RAMs organized as 16,777,216 words by 1 bit
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uPD4216102
uPD4217102
nPD4217102
PD4217102LE-60
LE-70
LE-80
LE-10
juPD4217102V-60
JUPD4217102G5-60
G5-70
DA736
24pin 2k 64
da73
D-A73
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2207B
Abstract: No abstract text available
Text: N E C ELECTRONICS INC bSE H • bM2752S 0038123 7X1 « N E C E DATA SHEET NEC PHOTO DIODE NDL5510C ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS ^80 „m InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5510C is an InGaAs Avalanche Photodiode especially designed for a detector of long wavelength optical fiber communica
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bM2752S
NDL5510C
NDL5510C
NDL5520P
DLS501P
NDL5520P1
NDL5501P1
NDL5506P:
Gl-50
DL5516P:
2207B
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DD3752
Abstract: No abstract text available
Text: L2E D NEC • bM275ES DD37521 b02 H N E C E LASER DIODE ELECTRONICS INC / NDL5070 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION NDL5070 is a 1550 nm pulsed laser diode especially designed fo r optical measurement equipment OTDR . The DC PBH
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bM275ES
DD37521
NDL5070
NDL5070
ABSOLUT520
GG37522
DD3752
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Untitled
Abstract: No abstract text available
Text: k. I N E C. ELECTRONICS INC 3ÖE D • bM27525 002=1012 b ■ PHOTO INTERRUPTER _ PS5003HC PHOTO 1C IN T E R R U P T E R DESCRIPTIO N PACKAG E DIMENSIONS Unit : mm The PS5003HC photo interrupter module is a GaAs Light Emitting Diode coupled to a Si monolithic integrated circuit
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bM27525
PS5003HC
PS5003HC
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC Tfl D Ë J bM27525 ODIAIS! 4 T ’*j3’ £5" / ¿ P A NPN SILICON E P I T A X I A L HIGH POWER SPEED I 4 5 2 TRANSISTOR H ARRA'; SWITCHING DESCRIPTION The j i PA1452H is an array of four power transistors. I t is especially designed for applications demand for high peak current cap ab ility. It is
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bM27525
PA1452H
b4E752S
Dni53
b427SHS
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424256 pin out
Abstract: TIO 872-M 424256 pd42256 nec 424256 DG342
Text: blE ]> • bM27525 D O a m 1!? DMT MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. N E C 0. 3 - ELECTRONICS INC Description Pin Configuration T h e M C -4 2 5 1 2 A 3 6 a n d th e M C -4 2 4 5 1 2 A 3 6 a re d y n a m ic
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bM27525
MC-42512A36
MC-424512A36
Q03M210
MC-42512A36,
-424512A36
72-Pin
MC-424512A
36BH/FH)
b4E75E5
424256 pin out
TIO 872-M
424256
pd42256
nec 424256
DG342
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PD3520D
Abstract: Fujinon S953 B423G
Text: _6 4 2 7 5 2 5 N E C NEC ELECTRONICS ELECTRONICS INC INC 98D Tfl 18072 D DE | bM2752S □01flD7E 3 SEC N E C Electronics Inc. ADVANCE PRODUCT INFORMATION DATA SHEET November 1986 /u P D 3 5 2 0 D CCD, Single-Board Color Image Sensor The information contained in this document is being issued in advance of the production cycle for the device. The
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bM2752S
01flD7E
b45752S
PD3520D
Fujinon
S953
B423G
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t 8328
Abstract: OD-8328 GaAsP Laser Diode ci 7475 J226 J22686
Text: N E C ELECTRONICS INC 51 T> bM2752S DD05S3b T BINECE T -4 1 -0 7 SEC Fiber Optic Devices OD-8328-l I SMF LD Module 1.3/¿m OD-8328 is designed to couple LD (Laser Diode) light output efficiently to single mode fiber. Ge photodiode is installed in OD-8328 for APC (Automatic Power Control) and moni
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bM2752S
Q005S3b
T-41-07
OD-8328-l
OD-8328
OD-8328-
J22686
FO-0010
t 8328
GaAsP Laser Diode
ci 7475
J226
J22686
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BH-80
Abstract: NEC 421000 MC-421000A36
Text: NEC ELECTRONICS INC me 3ÖE D B bM27525 QQ3175t> 1 BINECE t - ï w NEC Electronics Inc. j - p MC-421000A36 1,048,576 X 36-Bit Dynamic CMOS RAM Module Description Pin Configuration The M C -421000A 36is a fast-page dynam ic RAM module organized as 1,048,576 words by 36 bits and designed
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bM27525
QQ3175t>
MC-421000A36
36-Bit
72-Pin
b427S25
QG31737
MC-421000A36
BH-80
NEC 421000
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g0424
Abstract: transistor B42 350
Text: bM2752S 00’ 23bb 35Ü H N E C E / / M OS IN TEG RA TED C IR C U IT JU P D 42S 16 1 7 0 ,4 2 S 1 7 1 7 0 ,4 2 S 1 8 1 7 0 16 M B IT D Y N A M IC RAM (FA S T PA G E M O D E & B Y T E W R IT E M ODE -PRELIMINARY-DESCRIPTIO N The NEC #PD42S16170, // PD42S17170 and ¿¿PD42S18170 are 1 048 576 words by 16 bits dynamic
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bM2752S
uPD42S16170
uPD42S17170
uPD42S18170
475mil)
P32VF-100-475A
P32VF-100-475A
g0424
transistor B42 350
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G150
Abstract: NDL5300
Text: N E C ELECTRONI CS I NC b2E D • bM27555 D03ömb 5Mb « N E C E DATA SHEET NEC LIGHT EMITTING DIODE N D L5300 ELECTRON DEVICE 1 3 0 0 nm OPTICAL FIBER COMMUNICATION InGaAsP LIGHT EMITTING DIODE DESCRIPTION NDL5300 is an InGaAsP double heterostructure long wavelength LEO.
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bM27525
003614b
NDL5300
NDL5300
44-H-
LC-1116B
1987M
G150
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Untitled
Abstract: No abstract text available
Text: bM27525 0042205 O ti HNECE MOS INTEGRATED CIR CU IT ¿ ¿ P D 4 2 S 1 6 8 0 0 ,4 2 S 1 7 8 0 0 16 M BIT D Y N A M IC RAM FAST PAGE M ODE PRELIMINARY DESCRIPTION The NEC ¿¿PD42S16800 and /¿PD42S17800 are 2 097 152 words by 8 b it s dynamic CMOS RAM w ith o p tio n a l fa s t page mode.
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bM27525
PD42S16800
PD42S17800
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NEC CCD 20 pin sensor
Abstract: No abstract text available
Text: 642 752 5 _N E C E L EC TRONI CS INC 98D 18103 Tfl Í ^ jC /W NEC Electronics Inc. T-Ÿ/SS D DT|bM275SS QQ1Ö103 0 J ” #,PD3570 2 5 6 0 -B IT CCD l i n e a r im a g e s e n s o r P R E L IM IN A R Y D escription Pin Configuration TheyuPD3570 is a CCD charge-coupled device linear
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uPD3570
NEC CCD 20 pin sensor
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Untitled
Abstract: No abstract text available
Text: bSE D • bM27525 GG37S23 4Ö5 HNECE N E C ELECTRONICS INC LASER DIODE / NDL5071 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION ND L5071 is a 1 550 nm pulsed laser diode especially designed fo r optica l m easurement equipm ent O TD R . The DC-PBH
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bM27525
GG37S23
NDL5071
L5071
operating30
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TRAIN 40pin 400 mm
Abstract: D27C4000D 3BD4 27C4000D
Text: bM27525 0043b02 =170 • NECE DESCRIPTION The /iP D 2 7 C 4 0 0 0 is a 4 194 3 0 4 -b it electrically p ro g ra m m a b le read-only m e m o ry . The w o rd organization is selectable w ord m ode: 256K w o rd s by 16 bits, byte mode: 512K w o rd s by 8 bits . The device is fabricated
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bM27525
0043b02
uPD27C4000
4194304-bit
4000D
-10-pin
4000C
PD27C4000GW
TRAIN 40pin 400 mm
D27C4000D
3BD4
27C4000D
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DIODE s2l
Abstract: 4173 diode S2L DIODE PS5003HC photo interrupter module photo interrupter "Photo Interrupter MODULE"
Text: k. I N E C. ELECTRONICS INC 3ÖE D • bM27525 002=1012 b ■ PHOTO 'INTERRUPTER _ P S 5 0 0 3 H C PHOTO 1C INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS Unit : mm 3.0 = 0.2 I The PS5003HC photo interrupter module is a GaAs Light Emitting Diode coupled to a Si monolithic integrated circuit
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bM27555
PS5003HC
PS5003HC
RL-280il
DIODE s2l
4173 diode
S2L DIODE
photo interrupter module
photo interrupter
"Photo Interrupter MODULE"
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DD-37
Abstract: No abstract text available
Text: b2E » • bM27525 N E c ELEcmmcs / DD37MÖÜ 2 bT « N E C E INC - W S E R DIODE NDL5083 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC RIPTIO N N D L 5 0 8 3 is a 1 3 1 0 nm laser diode especially designed fo r optica l data com m unications. The Mesa-type DC-PBH Double
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bM27525
DD37MÖ
NDL5083
b427525
Q037462
DD-37
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C 33725
Abstract: 7DFL
Text: b2E D • NEC bM2752S DG37blD 7Dfl H N E C E ELECTRONICS INC LASER DIODE M ODULE NDL5605P 1 310nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5605P is a 1 310 nm DFB Distributed Feed-Back laser diode B utterfly package module w ith optical isolator. It in
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bM2752S
DG37blD
NDL5605P
310nm
NDL5605P
b427525
C 33725
7DFL
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bhrs
Abstract: GaAsP Laser Diode
Text: N E C ELECTRONICS INC 51 T> bM2752S DDQ5S3b T BINECE T-41 -0 7 NEC Fiber Optic Devices OD-8328-1 I SMF LD Module 1.3 /¿m OD-8328 is designed to couple LD (Laser Diode) light output efficiently to single mode fiber. Ge photodiode is installed in OD-8328 for APC (Automatic Power Control) and moni
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bM2752S
OD-8328-1
OD-8328
OD-8328-
OD-9470S)
FO-0010
bhrs
GaAsP Laser Diode
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