"PHOTOVOLTAIC CELL"
Abstract: Silicon Group Q60215-Y63-S1 BPY 10
Text: BPY 63 P BPY 63 P fso06635 Silizium-Fotoelement Silicon Photovoltaic Cell Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im ● Especially suitable for applications from
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fso06635
"PHOTOVOLTAIC CELL"
Silicon Group
Q60215-Y63-S1
BPY 10
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PHOTOVOLTAIC CELL
Abstract: Q60215-Y63-S1
Text: BPY 63 P BPY 63 P fso06635 Silizium-Fotoelement Silicon Photovoltaic Cell Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kathode = Chipunterseite
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fso06635
PHOTOVOLTAIC CELL
Q60215-Y63-S1
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Bpy 43
Abstract: foto transistor Y1112 GMOY6019 Q60215-Y1112 Q60215-Y1113 Q60215-Y5198 Q60215-Y62
Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPY 62 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm • Hohe Linearität • Hermetisch dichte Metallbauform TO-18 mit Basisanschluß, geeignet bis 125 °C
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Bpy 43
Abstract: BP 103-3 SFH 225 FA BPX 43-3/4 SFH 309-3/4
Text: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 4. Fototransistoren 4. Phototransistors TA = 25 °C Package TA = 25 °C Type ϕ Radiant sensitive area deg. mm2 IPCE λ = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V VCEO λ10% mA V nm tr,tf (IC = 1 mA, VCC = 5 V, RL = 1 kΩ)
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Q62702-P3595
Q62702-P3593
Q62702-P999
Q62702-P3594
Q6270
Q62702-P1677
Q62702-1129
Q62702-P216
Q62702-P956
Q62702-P1671
Bpy 43
BP 103-3
SFH 225 FA
BPX 43-3/4
SFH 309-3/4
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Q62702-P790
Abstract: Bpy 43 Q62702-P784 Q62702-P787 Q62702-P96 Q62702-P98 SFH402 BPY 62
Text: SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 fet06092 fet06091 fet06090 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Hergestellt im Schmelzepitaxieverfahren
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fet06092
fet06091
fet06090
Q62702-P790
Bpy 43
Q62702-P784
Q62702-P787
Q62702-P96
Q62702-P98
SFH402
BPY 62
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Phototransistor bp 101
Abstract: pin photodiode remote control bpy BPY61 rel photoelectric conversion Plastic Encapsulate Diodes phototransistor sensitive to red light silicon metal casing diode BPX62 transistor mm glass lens phototransistor
Text: Silicon Photovoltaic Cells, Silicon Photodiodes and Phototransistors Appnote 16 Optoelectronic components are increasingly used in modern electronics. The main fields of application are light barriers for production control and safety devices, light control and regulating equipment like twilight switches, fire detectors and facilities
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NMR14
Abstract: XG4C-4031 r2533 BLM21PG600SN1 CP24 1SS294 DD10 DD11 DD12 DD15
Text: 5 4 3 2 1 3.3V 3.3V 3.3V U2 A0 A1 A2 GND VCC WP SCL SDA D1 1SS294 R1 10k 8 7 6 5 ST M24C32 R3 CP1 D R5 1.5k P 1 2 3 4 R4 47 C2 12pF C1 12pF C3 22uF/16V 10k 0.1uF D N Y1 30MHz 5V 2.5V 3.3V R7 1K R13 4 3 2 1 R10 1.5K 1% R11 39(1%) R12 39(1%) R16 2.43K(1%) AVDD
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1SS294
M24C32
22uF/16V
30MHz
VDD25
VDD33
IDED10
IDED11
IDED12
NMR14
XG4C-4031
r2533
BLM21PG600SN1
CP24
1SS294
DD10
DD11
DD12
DD15
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NEC TANTAL
Abstract: Tantal 22uF/16V 10uF/16V tantal CP24 LT1761ES5-3.3 tantal NMR14 1SS294 DD10 DD11
Text: 5 4 3.3V A0 A1 A2 GND R1 10k 8 7 6 5 VCC WP SCL SDA 2 1 3.3V U2 1 2 3 4 3 3.3V D1 1SS294 R3 ST M24C32 R5 1.5k CP1 10k P 0.1uF 3.3V R4 47 C2 12pF C1 12pF C3 22uF/16V Y1 30MHz R6 D N D 1K DPC 5V 2.5V 3.3V R7 1K R13 4 3 2 1 R10 1.5K 1% R11 39(1%) R12 39(1%)
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1SS294
M24C32
22uF/16V
30MHz
VDD25
VDD33
IDED10
IDED11
IDED12
NEC TANTAL
Tantal 22uF/16V
10uF/16V tantal
CP24
LT1761ES5-3.3
tantal
NMR14
1SS294
DD10
DD11
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SFH400
Abstract: Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPX 38 sfh 400 BPY 62
Text: SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 fet06092 fet06091 fet06090 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 501 10.95 SFH 400, SFH 401, SFH 402
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fet06092
fet06091
fet06090
SFH400
Q62702-P784
Q62702-P787
Q62702-P790
Q62702-P96
Q62702-P98
BPX 38
sfh 400
BPY 62
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OHRD1938
Abstract: Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62 SFH 960
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an
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GEO06314
GET06091
GET06013
OHRD1938
Q62702-P784
Q62702-P787
Q62702-P790
Q62702-P96
Q62702-P98
BPY 62
SFH 960
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GEO06314
Abstract: GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62
Text: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g Chip position ø4.8 ø4.6 2.54 mm spacing welded 14.5 12.5 5.3 5.0 6.4 5.6 Anode = SFH 481 Cathode = SFH 401 package 1.1 .9 1 0.9 .1 ø5.6 ø5.3 glass lens GET06091
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GET06091
fet06091
GEO06314
fet06090
OHR01040
OHR01937
GEO06314
GET06013
GET06091
Q62702-P784
Q62702-P786
Q62702-P787
Q62702-P790
Q62702-P96
Q62702-P98
BPY 62
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NMR14
Abstract: BLM21PG600SN1 TANTAL 16V Tantal 22uF/16V B3FS-1002 sw dip-4 DPC 31 SW-DIP-4 1SS294 B3F-1002
Text: 5 4 3 2 1 D D SCL 3.3V 3.3V 3 2 1 JP1 XJ8C-0311 DPC R1 GPIO7 SW5 R2 10k R3 10k U2 10k B3FS-1002 8 7 6 5 GPIO6 SW4 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 3.3V M24C32-WBN6 B3FS-1002 CP1 3.3V 3.3V D1 1SS294 0.1uF R4 1.5k RESET GPIO5 SW1 B3FS-1002 R8 R6 R7 1K R9
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XJ8C-0311
B3FS-1002
M24C32-WBN6
1SS294
22uF/16V
B3F-1002
30MHz
XG8T-1031
NMR14
BLM21PG600SN1
TANTAL 16V
Tantal 22uF/16V
B3FS-1002
sw dip-4
DPC 31
SW-DIP-4
1SS294
B3F-1002
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bp 103-2
Abstract: Q62702-P79-S2 bp 103-5 Q62702-P1641
Text: Silicon Photodetectors Si-Fotodetektoren 2. Fototransistoren 2. Phototransistors 2.4 2.4 im hermetisch dichten Metallgehäuse Type Package deg. mm2 mA V nm US ±8 0.12 0.5 . 2.5 50 420 . 1130 BPY 62-3 0.8 . 1.6 7 Q60215-Y1112 BPY 62-4 1.25 . 2.5 9
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Q62702-P47
Q62702-P928
Q62702-P76
Q62702-P55
bp 103-2
Q62702-P79-S2
bp 103-5
Q62702-P1641
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bpy 79
Abstract: irl 3034 bestellnummern-verzeichnis Q62702-P1187 bf 478 Q62702-P935 Q62607-S61 sfh siemens SFH415-T siemens Bestellnummern-Verzeichnis
Text: SIEMENS Typ ‘ vorher Type ('formerly) BP 103 BP 103-2 BP 103-3 BP 103-4 BP 103-5 BP 104 F (*BP 104) BP 104 FS BP 104 S BPW21 BPW 33 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPX 38 B F FA FAS FS S BPX 38-2 BPX 38-3 BPX 38-4 BPX 38-5 BPX 43 BPX 43-2
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BPW21
Q62702-P75
Q62702-P79-S1
Q62702-P79-S2
Q62702-P79-S4
62702-P781
Q62702-P84
Q62702-P1605
Q62702-P885
bpy 79
irl 3034
bestellnummern-verzeichnis
Q62702-P1187
bf 478
Q62702-P935
Q62607-S61
sfh siemens
SFH415-T
siemens Bestellnummern-Verzeichnis
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BPY 10
Abstract: C 82 siemens SFH nm Bpy 43 Q60215-Y65
Text: Si-Fotodetektoren Silicon Photodetectors 8. Fotodioden für spezielle Anwendungen 8. Photodiodes for Special Applications Tk = 2 5 C r A = 25 C 8.2 Zwei- und Vierfach-Fotodioden Package Radiant sensitive area ? K„ = 5 V , £ v = 1000 Ix, standard light A
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Q62702-P270
Q62702-P17-S1
BPY11
Q60215-Y111-S5
Q62702-P51
Q60215-Y67
Q60215-Y65
Q60215-Y63-S1
Q62607-S60
Q62607-S61
BPY 10
C 82
siemens SFH nm
Bpy 43
Q60215-Y65
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fotodiode oe 100
Abstract: siemens SFH nm SFH 462 BPY64 BPW 64 photo siemens germanium transistoren PX60 SIEMENS Phototransistors BPY siemens transistoren germanium
Text: SIEMENS Typenübersicht Selector Guide Inhaltsverzeichnis Fotodetektoren Contents Photodetectors Page Seite Fotomodul für Fernbedienungen.12 Photomodule for Remote Control Systems. 12
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SFH302
Abstract: SFH203 IRF 426
Text: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Outline drawings in mm Maßbilder (in mm) Figure 1 S u r 'a c e no* f la t in i Ö! °! Q .8 n a x ° G 1 GND 9.0 y t ' 0.5 S. ¡ 5.9 7.8 7.5 oo m ö o ¡ f t 1 C athode
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GE006270
SFH302
SFH203
IRF 426
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KTY 88
Abstract: KTY 20-6 Q62902-B152-F222 Q62902-B156-F222 Q62703-N0191 Q62902-B155 Q62702-P1088 Q62702P946 Q62703-N209 Q62902-B155-F222
Text: Alphanumerische Bestellnummern Q-Nummem Alphanumeric Ordering Codes (Q numbers) Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer Ordering code
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Q60215-Y111-S5
Q60215-Y1111
Q60215-Y1112
Q60215-Y1113
Q60215-Y62
Q60215-Y63-S1
Q60215-Y65
Q60215-Y66
Q60215-Y67
Q62607-S60
KTY 88
KTY 20-6
Q62902-B152-F222
Q62902-B156-F222
Q62703-N0191
Q62902-B155
Q62702-P1088
Q62702P946
Q62703-N209
Q62902-B155-F222
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FP 310
Abstract: Q62902-B155-F222 Siemens LS 3369-fh irl 3034 SCF 5784 KTY 11-5 KTY 20-5 KTY 14-6 Q68000-A7820 LG 57A
Text: Alphanumerisches Typenverzeichnis Alphanumeric Type Index Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Typ Type Bestellnummer Ordering code 4N25 4N26
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6N135
6N136
6N138
6N139
BPW21
H62702-P3051
Q62702-P3009
Q62702-P3057
Q62702-P3058
Q62702-P3054
FP 310
Q62902-B155-F222
Siemens LS 3369-fh
irl 3034
SCF 5784
KTY 11-5
KTY 20-5
KTY 14-6
Q68000-A7820
LG 57A
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SFH Siemens
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 Cathode SFH 480 Anode (SFH 216, SFH 231 SFH 400) Chip position Radiant Sensitive area o o (O o O) GE006314 : SFH 481 Anode Cathode : SFH 401 O ) o (O o Chip position (2.7) Radiant sensitive area
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GE006314
GET06013
OHRD1937
SFH Siemens
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case
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235bD5
00S77Ã
fl235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS B P Y 63 P Silizium-Fotoelement Silicon Photovoltaic Cell and s o ld e r p a d s A c tiv e 0 M a x. s o ld e r a re a s and bock A p p ro x . la c q u e r e d a re a on fr o n t s id e fs o 0 6 6 3 5 D io d e GS006635 w e ig h t 0 .2 5 g Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.
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GS006635
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SFH Siemens
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position 2.7 SFH 400 SFH 401 SFH 402 Cathode (SFH 480 Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area 00.45 i -L 5.3 5.0 7.4 GE006314 O Oí o o (O 6.6 Approx. weight 0.5 g Anode = SFH 481
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GE006314
GET06091
SFH401
SFH Siemens
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diode SR 315
Abstract: BPX65 high sensitive
Text: SIEM ENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) SFH 480 SFH 481 SFH 482 Radiant Sensitive area L GE006314 o a > o (O o Approx. weight 0.5 g Anode = SFH 481
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E006314
GET06091
GET06013
BPX65)
diode SR 315
BPX65 high sensitive
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