Untitled
Abstract: No abstract text available
Text: Cross Reference Guide BR6535 / BR6535* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 10.0 - 400.0 MHz Gain 32.5 dB Typical 30.0 dB Min Noise Figure 1.8 dB Typical 3.0 dB Max P1dB 22.0 dBm Typical 20.0 dBm Min
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BR6535
SBR6535*
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Untitled
Abstract: No abstract text available
Text: Available as: RF AMPLIFIER MODEL TR6535 TR6535, 4 Pin TO-8B T8 BR6535, Connectorized Housing (H2) Typical Intermodulation Performance at 25 ºC Features Second Order Harmonic Intercept Point . +54 dBm (Typ.) Second Order Two Tone Intercept Point . +48 dBm (Typ.)
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TR6535
TR6535,
BR6535,
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RF power amplifier 49 MHz
Abstract: BR6535 RN6535 SM19 TR6535
Text: Available as: TR6535, 4 Pin TO-8B T8 RN6535, 4 Pin Surface Mount (SM19) BR6535, Connectorized Housing (H2) RF AMPLIFIER MODEL TR6535 Typical Intermodulation Performance at 25 º C Features Second Order Harmonic Intercept Point . +54 dBm (Typ.) Second Order Two Tone Intercept Point . +48 dBm (Typ.)
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Original
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TR6535,
RN6535,
BR6535,
TR6535
RF power amplifier 49 MHz
BR6535
RN6535
SM19
TR6535
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BR6535
Abstract: RN6535 SM19
Text: Available as: RF AMPLIFIER MODEL Typical Intermodulation Performance at 25 º C Features Second Order Harmonic Intercept Point . + Second Order Two Tone Intercept Point . + Third Order Two Tone Intercept Point . + • High Gain: 32.5 dB Typical
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RN6535,
BR6535,
BR6535
RN6535
SM19
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Untitled
Abstract: No abstract text available
Text: Available as: RF AMPLIFIER MODEL TR6535 RN6535, 4 Pin Surface Mount SM19 BR6535, Connectorized Housing (H2) Typical Intermodulation Performance at 2 5 0 C Second Order Harmonic Intercept Point +54 (Typ.) Features • High Gain: 32.5 dB Typical ■ Low Noise: 2 dB Typical
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OCR Scan
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TR6535
RN6535,
BR6535,
S11--------Deg
S21---------Deg
S12---------Deg
S22-------Deg
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M 4 3171 opto
Abstract: 9571 gh opto 3171 MBR6545 3171 opto SOT223 6 pin
Text: MOTOROLA BR6535 MBR6545 SEMICONDUCTOR TECHNICAL DATA MBR6545 is a Motorola Preferred Device Switchmode Power Rectifiers . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
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OCR Scan
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MBR6535
MBR6545
MBR6545
DO-35
M 4 3171 opto
9571 gh
opto 3171
3171 opto
SOT223 6 pin
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Untitled
Abstract: No abstract text available
Text: BR6535 MBR6545 M O T O RO LA S W I T C H M O D E POW ER R E CT IF IER S u s in g a p la t in u m p o w e r d io d e HIGH T E M P E R A T U R E S C H O T T K Y R E C T IF I E R S b a r r i e r m e t a l in a la r g e a r e a m e t a l- t o - s ilic o n S t a t e o f- T h e - a rt g e o m e t r y f e a t u r e s e p it a x ia l c o n s t r u c
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OCR Scan
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MBR6535
MBR6545
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