41315
Abstract: 30424 45560
Text: CLY2 Datasheet High-Power Packaged GaAs FET Description: Applications: The CLY2 is a high-breakdown voltage GaAs FET designed for PA driver applications in the 400 MHz to 3 GHz frequency range. It is ideal for portable PA applications in mobile phones and portable WLAN transceivers due to its
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Untitled
Abstract: No abstract text available
Text: TPS2330, TPS2331 SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS277 – MARCH 2000 features D D D D D D D D D D D OR PW PACKAGE TOP VIEW Single-Channel High-Side MOSFET Driver Input Voltage: 3 V to 13 V Inrush Current Limiting With dv/dt Control
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TPS2330,
TPS2331
SLVS277
14-Pin
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SL 2128 dip 8
Abstract: No abstract text available
Text: TISP7Ö72F3, TISP7082F3 TRIPLE SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SLPSEI5 - MARCH I9M - REVISED SEPTEMBER ¡994 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • lon-lmplanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
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TISP7082F3
7Q72F3
7082F3
SL 2128 dip 8
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2N5551
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage
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2N5551
100MHz
2N5551
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2SJ201
Abstract: 2SJ20
Text: TOSHIBA FIELD EFFECT TRANSISTOR 2SJ201 SILICON P CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm 03.3 ±0.2 20.5MAX : Vd s s ^-ZOOV MIN. 16.01 . High Breakdown Voltage . High Forward Transfer Admittance : | Yfs | -5.OS (TYP.) : « o -H o O (D
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2SJ201
2SK1530
Ta-25
2-21F1B
-10mA,
2SJ201
2SJ20
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ic 748
Abstract: 2SC4688
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage
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2SC4688
ic 748
2SC4688
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2SC5242
Abstract: No abstract text available
Text: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.
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2SC5242
2SA1962
2-16C1A
2SC5242
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Untitled
Abstract: No abstract text available
Text: TISP4082 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS SLPSE36 - APRE. 1987 - REVISED SEPTEMBER 19M TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge 0 0 -2 2 0 PAC KAG E
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SLPSE36
TISP4082
PE-60
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UM9151
Abstract: 1N4001X4
Text: UMC UM 9151-3 "BÊHÊnim nÊÊÊKÊÊHnHKÊÊtKÊBÊÊÊÊIÊiÊBÊÊÊm p u/s e dia ler H i Features • Direct telephone line operation ■ Redial with either * or # key ■ 4 x 3 matrix keyboard interface ■ Dialer reset for line power break > 200 msec
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22-digit
800ms
UM9151-3
1N4001
UM9151-3
UM9151
1N4001X4
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SD2449
2SB1594
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Untitled
Abstract: No abstract text available
Text: UCC3916 y UNITRODE SCSI Termpower Manager FEATURES DESCRIPTION • Integrated Circuit Breaker Function The UCC3916 SCSI termpower manager provides complete power man agement, hot swap capability, and circuit breaker functions with minimal ex ternal components. For most applications, the only external component
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UCC3916
UCC3916
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S1377
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE S1377 Unit in ram MEDIUM POWER AMPLIFIER APPLICATIONS. 9.9MAX. 0Z.2±aZ TV HORIZONTAL DRIVER APPLICATIONS. FEATURES: . High Collector to Emitter Breakdown Voltage -• Vcfi0=250V MAXIMUM RATINGS Ta =25°C CHARACTERISTIC SYMBOL
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S1377
100mA
200mA,
S1377
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Untitled
Abstract: No abstract text available
Text: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown
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TLP628
TLP628)
TLP628,
TLP628-4
5000Vrms
UL1577,
E67349
TLP628-4
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74hc74ap
Abstract: No abstract text available
Text: 8 P R E C A U T I O N S IN H A N D L I N G 8 -1 E le ctric Static D is c h a r g e CMOS IC has a very thin gate insulation oxide film . When high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate can sometimes breaks down. In
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TC74HCxxxA
TC74HCxxx
74hc74ap
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transistor d 4515
Abstract: Transistor 4515 2-21F1C GT20D101
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE HIGH POWER AMPLIFIER APPLICATION Unit in mm . High Breakdown Voltage ¿3.3 ¿0.2 20.5MAX : Vc e s =250V MIN. . High Forward Transfer Admittance : | Yfe | =10S (TYP.) . Complementary to GT20D201
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GT20D101
GT20D201
2-21F1C
transistor d 4515
Transistor 4515
2-21F1C
GT20D101
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Untitled
Abstract: No abstract text available
Text: 2SB1557- SILICON PNP EPITAXIAL TYPE DARLINGTON POWER U nit in mm POW ER AM PLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2 S D 2 3 8 6 03.2*0.2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SB1557·
--140V
2-16C1A
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2N5401
Abstract: No abstract text available
Text: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V
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2N5401
-160V,
5-50nA
-50mA,
-10mA
100MHz
10Hz-15
2N5401
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2SD525
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio
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2SD525
2SB595.
2SD525
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2-16C1A
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 5 5 8 U nit in mm POWER AMPLIFIER APPLICATIONS 15 9 V i A X • • )S3.2 ♦ 0.2 High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2SD2387 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO
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--140V
2SD2387
100fl
-140V
--50mA,
--12A
2-16C1A
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2SC2535
Abstract: 400V to 6V DC Regulator
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2535 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED HIGH VOLTAGE SW IT C H IN G APPLICATIONS. SW ITCHIN G REGULATOR APPLICATIONS. JO 3 MAX HIGH SPEED D C-DC CONVERTER APPLICATIONS. • Excellent Switching Time • High Collector Breakdown Voltage V C E O = 400V
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2SC2535
2SC2535
400V to 6V DC Regulator
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LT 5265
Abstract: TISP7290
Text: TISP7180, TISP7290 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSOR D3063. DECEMBER 1987 FOR APPLICATIONS IN TELECOMMUNICATIONS EQUIPMENT • Breakover Voltage to Common TISP7180 . . . 180 V Max TISP7290 . . . 290 V Max • Reference Voltage TISP7180 . . . 145 V Min
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TISP7180,
TISP7290
D3063.
TISP7180
TISP7290
TISP7000
LT 5265
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UFN140
Abstract: UFN143 kd 617
Text: POWER MOSFET TRANSISTORS “ ui 100 Volt, 0.085 Ohm N-Channel UFN142 ufni43 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN142
ufni43
UFN140
UFN141
UFN142
UFN143
Q2173
UFN140
UFN143
kd 617
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2SB1016
Abstract: 1C13MAX
Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency
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2SB1016
1C13MAX.
-100V
2SD1407
Q76-CU5
-50mA,
2SB1016
1C13MAX
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T20D201
Abstract: gt20d201
Text: TOSHIBA GT20D201 Insulated Gate Bipolar Transistor U nit in m m Silicon P Channel MOS Type High Power Amplifier Application Features • High Breakdown Voltage - VCES = -250V Min • High Forward Transfer Admittance - Yfs' = 10S (Typ.) • Complementary to GT20D101
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GT20D201
-250V
GT20D101
T20D201
T20D201
gt20d201
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