Untitled
Abstract: No abstract text available
Text: IR Emitter and Detector LTE-R38386-S 1. Description Lite-On offers a broad range of discrete infrared components for application such as remote control, IR wireless data transmission, security alarm & etc. Customers need infrared solutions featuring high power, high speed and wide viewing
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LTE-R38386-S
940nm
850nm
002/A4
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C2719
Abstract: K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02
Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.
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K1713/K3413-01,
SE-171
KIRD1029E04
C2719
K1713-01
Hamamatsu PbS
TWO COLOR DETECTOR
UV Flame detector
pbs photoconductive
DETECTOR FLAME
A3179-03
C1103-04
K1713-02
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Hamamatsu PbS
Abstract: K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01
Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.
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K1713/K3413-01,
SE-171
KIRD1029E05
Hamamatsu PbS
K1713-02
K3413-01
K3413-02
A3179-03
C1103-04
C2719
C3757-02
K1713-01
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Untitled
Abstract: No abstract text available
Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.
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K1713/K3413-01,
SE-171
KIRD1029E05
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Untitled
Abstract: No abstract text available
Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.
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K1713/K3413-01,
SE-171
KIRD1029E02
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Hamamatsu PbS
Abstract: United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.
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K1713/K3413-01,
SE-171
KIRD1029E06
Hamamatsu PbS
United Detector silicon photodiode
A3179-03
C1103-04
C3757-02
C9329
K1713-01
K1713-02
K3413-01
K3413-02
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Untitled
Abstract: No abstract text available
Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.
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K1713/K3413-01,
SE-171
KIRD1029E06
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C1103-04
Abstract: flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW
Text: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.
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K1713/K3413-01,
SE-171
KIRD1029E03
C1103-04
flame detector structure
K1713
TWO COLOR DETECTOR
two color photodiode
Hamamatsu PbS
DETECTOR FLAME
Semiconductor Radiation Detector
SI PBS DETECTOR
transistor 1BW
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GaAs 850 nm Infrared Emitting Diode
Abstract: OP265 OP265WPS OP505 OP535
Text: Plastic Infrared Emitting Diode OP265WPS Features: • • • • • T-1 3 mm package style Broad irradiance pattern Point source with flat lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: The OP265WPS point source model is a flat-lensed 850 nm diode with a broad radiation pattern that provides
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OP265WPS
OP265WPS
OP265
OP505
OP535
Bulletins50
GaAs 850 nm Infrared Emitting Diode
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led diode 5 watt
Abstract: "3 watt led" 3 watt led ILL5A0002B "10 watt incandescent" 505nm led light 10 watt white diode broad range IR Source
Text: Compact LED Engine Light Source 1 High Power Light Emitting Diode 3 Watt LED Similar output as 10 Watt incandescent bulb Colors: Cool White, Warm White, Red and Cyan Model-ILL5A0002 1.74” (44.2mm) round compact source High efficiency optics: 5 or 25 degrees (see
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Model-ILL5A0002
proper24g
ILL5A0002G
ILL5A0002D
625nm
505nm
250mA
325mA
ILL5A0002B
ILL5A0002B
led diode 5 watt
"3 watt led"
3 watt led
"10 watt incandescent"
led light 10 watt
white diode
broad range IR Source
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OP265WPS
Abstract: No abstract text available
Text: Product Bulletin OP265WPS November 2000 Plastic Point Source Infrared Emitting Diode Type OP265WPS 150 Absolute Maximum Ratings TA = 25o C unless otherwise noted Features Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
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OP265WPS
OP265WPS
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HE8811
Abstract: No abstract text available
Text: HE8811 GaAlAs Infrared Emitting Diode ODE-208-999B Z Rev.2 Mar. 2005 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments
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HE8811
ODE-208-999B
HE8811
HE8811:
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HE8811
Abstract: ODE-208-999A
Text: HE8811 GaAlAs Infrared Emitting Diode ODE-208-999A Z Rev.1 Jan. 2003 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments
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HE8811
ODE-208-999A
HE8811
HE8811:
ODE-208-999A
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Untitled
Abstract: No abstract text available
Text: HE8811 ODE-208-051A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam
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HE8811
ODE-208-051A
HE8811
HE8811:
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Hitachi DSA002726
Abstract: No abstract text available
Text: HE8811 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments
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HE8811
HE8811
HE8811:
Hitachi DSA002726
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HE8811
Abstract: No abstract text available
Text: HE8811 ODE-208-051 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam
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HE8811
ODE-208-051
HE8811
HE8811:
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A1701
Abstract: NEC 701A P 1701A LD1701
Text: I . I / I S A d vanced 1 L in e a r [Z J Z ir Devices ALD1701A/ALD1701B ALDI 701/ALD1701G MICROPOWER RAIL TO RAIL CMOS OPERATIONAL AMPLIFIER GENERAL DESCRIPTION PIN CONFIGURATION The ALD 1701 is a monolithic CMOS micropower high slew rale operational amplifier intended for a broad range of analog applications
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ALD1701A/ALD1701B
701/ALD1701G
A1701
NEC 701A P
1701A
LD1701
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toshiba tlc 711
Abstract: RDRAM Clock T3D Toshiba
Text: TO SH IB A T E N T A T IV E TC59RM716 8 MB/RB T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N M O N O L IT H IC Overview The Direct R a m b u s T M DRAM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video
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TC59RM716
128/144-Mbit
600-MHz
800-MHz
P-TFBGA62-1312-0
toshiba tlc 711
RDRAM Clock
T3D Toshiba
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Untitled
Abstract: No abstract text available
Text: ENCASED PIEZO ALARMS WITH INTERNAL CIRCUITRY m u F fn fn PKB Series T he PC board m ountable piezo alarm s described on this page are com pletely self-contained alarm s requiring only a DC voltage source fo r operation. P roviding the user w ith high audio
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HEIMANN LHI
Abstract: No abstract text available
Text: LH i 8 14 • Dual Channel Detectors in TO 5 Housing • Two Different IR Filters built in • Designed for Gas Monitoring 2.66 This special detector series consists of two single element detectors with rectangular sensing elements. Each channel is connected as
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808TC.
TD0332Q
HEIMANN LHI
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Untitled
Abstract: No abstract text available
Text: •$: s W^M: t ¥ i ■ ; f e * L H i m ïïm ■'■■'I-.;-:'-."-.Iâ :; wmm 8 14 • Dual Channel Detectors in TO 5 Housing o a ^ :$ r : • Two Different IR Filters built in • Designed for Gas Monitoring 2.66 '.!:i'i!:!i I.:-.:SN?.: ® IP I *
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808TC.
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CLE331E
Abstract: No abstract text available
Text: CLE331E PRELIMINARY DATA Super-efficient Aluminum Gallium Arsenide IRED Point Source Die features • • • . • • • • Clairex® Technologies, Incorpo rated November, 1997 absolute maximum ratings Ta=25°C unless otherwise stated. high power output
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CLE331E
10mHz
CLE331E
100mA
100mA,
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Untitled
Abstract: No abstract text available
Text: CLE331E PRELIMINARY DATA Super-efficient Aluminum Gallium Arsenide IRED Point Source Die Ctairex® Technologies, Incorporated November, 1997 A LL DIMENSIONS A R E IN N CH ES. features • • • . • • • • absolute maximum ratings Ta =25°C unless otherwise stated.
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CLE331E
100mA
100mA,
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Untitled
Abstract: No abstract text available
Text: IIIHCRTRUrST PRELIM IN A RY Umili CÄT508 -SV Precision Reference FEATURES S E M I C O N D U C T O R D ESCRIPTIO N • -S.000V Output ±0.3% • Output Adjustment Range of > ± 3% • Excellent Temperature Stability < 3 ppm/°C • Output Sinks and Sources >10 mA
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T508Reference
CAT508
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