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    Infineon Technologies AG BSC0924NDIATMA1

    MOSFET 2N-CH 30V 17A/32A TISON8
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    DigiKey BSC0924NDIATMA1 Digi-Reel 74,634 1
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    Infineon Technologies AG BSC0924NDI

    MOSFETs N-Ch 30V,30V 40A,40A TISON-8
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    Mouser Electronics BSC0924NDI 4,225
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    Infineon Technologies AG SP000934750

    MOSFETs N-Ch 30V,30V 40A,40ATISON-8
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    Mouser Electronics SP000934750
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    BSC0924NDI Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSC0924NDIATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 30V 17A/32A TISON8 Original PDF

    BSC0924NDI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0924NDI

    Abstract: BSC0924NDI
    Text: BSC0924NDI Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 5 3.7 mW VGS=4.5 V 7 5.2 40 40 VDS • Integrated monolithic Schottky-like diode RDS on ,max • Optimized for high performance Buck converter


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    PDF BSC0924NDI IEC61249-2-22 0924NDI 0924NDI BSC0924NDI

    Untitled

    Abstract: No abstract text available
    Text: BSC0924NDI Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 30 30 V VGS=10 V 5 3.7 mW VGS=4.5 V 7 5.2 40 40 • Dual N-channel OptiMOS™ MOSFET VDS • Integrated monolithic Schottky-like diode RDS on ,max • Optimized for high performance Buck converter


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    PDF BSC0924NDI IEC61249-2-22 0924NDI

    0924NDI

    Abstract: IEC61249-2-22 BSC0924NDI Pgti C520A010-101 REV D
    Text: BSC0924NDI Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 5 3.7 mΩ VGS=4.5 V 7 5.2 40 40 VDS • Integrated monolithic Schottky-like diode RDS on ,max • Optimized for high performance Buck converter


    Original
    PDF BSC0924NDI IEC61249-2-22 0924NDI 0924NDI IEC61249-2-22 BSC0924NDI Pgti C520A010-101 REV D

    Untitled

    Abstract: No abstract text available
    Text: BSC0924NDI Dual N-Channel OptiMOS MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 30 30 V VGS=10 V 5 3.7 mΩ VGS=4.5 V 7 5.2 40 40 VDS • Integrated monolithic Schottky-like diode RDS on ,max • Optimized for high performance Buck converter


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    PDF BSC0924NDI IEC61249-2-22 0924NDI

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


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