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    BSM150GB160D Price and Stock

    Siemens BSM150GB160DN11

    Insulated Gate Bipolar Transistor, 150A I(C), 1600V V(BR)CES, N-Channel
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    BSM150GB160D Datasheets Context Search

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    BSM150GB160D

    Abstract: No abstract text available
    Text: BSM150GB160D Transistors Half Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.6k V(BR)GES (V)20 I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.25k Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case100m


    Original     		BSM150GB160D Junc-Case100m PDF