BSN6010 Search Results

BSN6010 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BSN6010		Philips Semiconductors	N-channel enhancement mode MOS transistor		Scan	PDF
BSN6010L		Philips Semiconductors	N-channel enhancement mode MOS transistor		Scan	PDF

Catalog Datasheet	MFG & Type	Document Tags	PDF
BSN6010L Abstract: No abstract text available Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN6010L FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL • No secondary breakdown 1 g gate • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain	OCR Scan	BSN6010L 711002b 011GDS4 BSN6010L Q-101 MBC346 7110ASb 01100SS	PDF
D1100 Abstract: BSN6010 Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN6010 FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL DESCRIPTION • No secondary breakdown 1 g gate • Direct interface to C-MOS, TTL etc. 2 s source	OCR Scan	BSN6010 711002b MBC846 D1100S1 D1100 BSN6010	PDF
BSN6010L Abstract: BSN601OL Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN6010L FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g gate s source d drain	OCR Scan	BSN6010L 11GG54 MBC346 711002b D1100SS BSN6010L BSN601OL	PDF
BSN6010 Abstract: MAM273 Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN6010 FEATURES PINNING - SOT23 • High speed switching PIN SYMBOL • No secondary breakdown 1 g gate • Direct interface to C-MOS, TTL etc. 2 s source 3 d drain DESCRIPTION	OCR Scan	BSN6010 MAM273 011DDSD MBC846 BSN6010 MAM273	PDF