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    BSO207P H Search Results

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    BSO207P H Price and Stock

    Infineon Technologies AG BSO207PHXUMA1

    MOSFET 2P-CH 20V 5A 8DSO
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    DigiKey BSO207PHXUMA1 Reel
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    BSO207PHXUMA1 Digi-Reel 1
    • 1 $1.03
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    Verical BSO207PHXUMA1 1,749 790
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    Rochester Electronics BSO207PHXUMA1 1,749 1
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    TME BSO207PHXUMA1 2,214 1
    • 1 $0.54
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    Infineon Technologies AG BSO207PH

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    Bristol Electronics BSO207PH 1,753
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    BSO207P H Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSO207PH Infineon Technologies FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 5A DSO-8 Original PDF
    BSO207PHXUMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2P-CH 20V 5A 8DSO Original PDF

    BSO207P H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BSO207P

    Abstract: No abstract text available
    Text: BSO207P TM OptiMOS -P Power-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View


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    BSO207P SIS00070 BSO207P PDF

    BSO207P

    Abstract: No abstract text available
    Text: BSO207P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO207P P-SO 8 V RDS on 45 mΩ -5.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View


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    BSO207P SIS00070 BSO207P PDF

    Untitled

    Abstract: No abstract text available
    Text: BSO207P H OptiMOS P-Power-Transistor Product Summary Features V DS • dual P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 45.0 mΩ V GS=2.5 V 70.0 ID -5.7 A • Super Logic Level (2.5V rated)


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    BSO207P IEC61249-2-21 PDF

    BSO207P

    Abstract: No abstract text available
    Text: BSO207P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 45 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated


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    BSO207P SIS00070 Q67042-S4068 BSO207P PDF

    diode smd code 57A

    Abstract: BSO207P smd diode 57A
    Text: BSO207P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature  Dual P-Channel  Enhancement mode  Super Logic Level 2.5 V rated 150°C operating temperature  Avalanche rated  dv/dt rated VDS -20 RDS(on) 45 ID Type Package Ordering Code


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    BSO207P SIS00070 Q67042-S4068 diode smd code 57A BSO207P smd diode 57A PDF

    Untitled

    Abstract: No abstract text available
    Text: BSO207P Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature  Dual P-Channel  Enhancement mode  Super Logic Level 2.5 V rated 150°C operating temperature  Avalanche rated  dv/dt rated VDS -20 RDS(on) 45 ID Type Package Ordering Code


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    BSO207P SIS00070 Q67042-S4068 PDF

    BSO207P

    Abstract: IEC61249-2-21 JESD22-A114 BSO207P H
    Text: BSO207P H OptiMOS P-Power-Transistor Product Summary Features V DS • dual P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 45.0 mΩ V GS=2.5 V 70.0 ID -5.7 A • Super Logic Level (2.5V rated)


    Original
    BSO207P IEC61249-2-21 IEC61249-2-21 JESD22-A114 BSO207P H PDF

    Untitled

    Abstract: No abstract text available
    Text: BSO207P H OptiMOS P-Power-Transistor Product Summary Features V DS • dual P-Channel in SO8 R DS on ,max • Qualified according JEDEC for target applications • 150°C operating temperature -20 V V GS=4.5 V 45.0 mΩ V GS=2.5 V 70.0 ID -5.7 A • Super Logic Level (2.5V rated)


    Original
    BSO207P IEC61249-2-21 PDF

    diode smd code 57A

    Abstract: smd diode 57A BSO207P
    Text: BSO207P OptiMOS-P Small-Signal-Transistor Product Summary Feature • Dual P-Channel • Enhancement mode VDS -20 V RDS on 45 mΩ ID • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated S1 1 8 D1 G1


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    BSO207P SIS00070 Q67042-S4068 diode smd code 57A smd diode 57A BSO207P PDF

    sso8 package

    Abstract: MOSFET P SOT-23 BUZ350 BS0615NV BUZ345 SOT323 MOSFET P tda 2850 n-channel 250V power mosfet smd buz341 BSS138N
    Text: L o w Vo l t a g e I C s – D i s c r e t e s : O p t i M O S , O p t i M O S ® 2 Pow e r Ma n a g e m e n t & Su p p l y : D C / D C Se l e c t i o n Gu i d e w w w. i n f i n e o n . c o m / p o w e r Never stop thinking. Introduction DC/DC CONVERSION plays a critical role in todays’ applications such as


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    B152-H8203-X-X-7600 sso8 package MOSFET P SOT-23 BUZ350 BS0615NV BUZ345 SOT323 MOSFET P tda 2850 n-channel 250V power mosfet smd buz341 BSS138N PDF

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


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    SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


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    Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


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    lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Text: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


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    PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


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