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    BSS138 MARKING Search Results

    BSS138 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    BSS138 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K38 SOT-23

    Abstract: BSS138* spice model bss138 TRANSISTOR K38 transistor bss138 bss138 MARKING DS30144 marking k38 BSS138-7 BSS138-7-F
    Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23


    Original     		PDF BSS138 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30144 K38 SOT-23 BSS138* spice model bss138 TRANSISTOR K38 transistor bss138 bss138 MARKING marking k38 BSS138-7 BSS138-7-F

    K38 SOT-23

    Abstract: BSS138 BSS138* spice model TRANSISTOR K38 94v0 c-05 pcb BSS138-7 BSS138-7-F marking k38 transistor bss138 bss138 k38
    Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance A Low Gate Threshold Voltage D Low Input Capacitance B C Low Input/Output Leakage G TOP VIEW S Available in Lead Free/RoHS Compliant Version Note 3


    Original     		PDF BSS138 J-STD-020C MIL-STD-202, OT-23 DS30144 K38 SOT-23 BSS138 BSS138* spice model TRANSISTOR K38 94v0 c-05 pcb BSS138-7 BSS138-7-F marking k38 transistor bss138 bss138 k38

    BSS138* spice model

    Abstract: K38 SOT-23 DS30144 K38 sot23 TRANSISTOR K38 bss138 BSS138/BSS138* spice model BSS138-7 MARKING k38 SOT23 BSS1381
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS138 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·


    Original     		PDF BSS138 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30144 BSS138* spice model K38 SOT-23 K38 sot23 TRANSISTOR K38 bss138 BSS138/BSS138* spice model BSS138-7 MARKING k38 SOT23 BSS1381

    BSS138* spice model

    Abstract: bss138 K38 SOT-23
    Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version SOT-23


    Original     		PDF BSS138 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30144 BSS138* spice model bss138 K38 SOT-23

    K38 SOT-23

    Abstract: BSS138* spice model BSS138 BSS138-7-F bss138 MARKING bss138 k38 DS30144
    Text: SPICE MODEL: BSS138 BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · Low On-Resistance A Low Gate Threshold Voltage D Low Input Capacitance B Low Input/Output Leakage C G TOP VIEW S Lead Free/RoHS Compliant Note 3 D


    Original     		PDF BSS138 J-STD-020C MIL-STD-202, DS30144 K38 SOT-23 BSS138* spice model BSS138 BSS138-7-F bss138 MARKING bss138 k38

    Untitled

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS138 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·


    Original     		PDF BSS138 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30144

    BSS138 TO236

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ 3 DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		PDF BSS138 OT-23-3 O-236) OT-23-3 QW-R502-271 BSS138 TO236

    K38 SOT-23

    Abstract: equivalent transistor k38 BSS138-7-F spice models bss138 BSS138* spice model esis power TRANSISTOR K38 BSS138
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF BSS138 AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS30144 K38 SOT-23 equivalent transistor k38 BSS138-7-F spice models bss138 BSS138* spice model esis power TRANSISTOR K38 BSS138

    Untitled

    Abstract: No abstract text available
    Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


    Original     		PDF BSS138

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE  DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		PDF BSS138 BSS138G-AE2-R BSS138G-AL3-R QW-R502-271

    BSS138G

    Abstract: BSS138 TO236 BSS138
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION 3 This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves


    Original     		PDF BSS138 OT-23-3 O-236) BSS138G-AE2-R QW-R502-271 BSS138G BSS138 TO236 BSS138

    BSS138G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE „ DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the


    Original     		PDF BSS138 OT-23-3 OT-323 QW-R502-271 BSS138G

    BSS138/J1

    Abstract: BSS138 onr 20
    Text: BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application: * DC to DC Converter


    Original     		PDF BSS138 OT-23 BSS138/J1 BSS138 onr 20

    bss138 MARKING

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original     		PDF BSS138 AEC-Q101 J-STD-020 MIL-STD-202, DS30144 bss138 MARKING

    K38 SOT-23

    Abstract: marking k38
    Text: BSS138 ADVANCE INFORMATION N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data · ·


    Original     		PDF BSS138 OT-23 OT-23, MIL-STD-202, 250mA -250mA 300ms, DS30144 K38 SOT-23 marking k38

    BSS138

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance   Low Gate Threshold Voltage   Low Input Capacitance  Fast Switching Speed  Moisture Sensitivity: Level 1 per J-STD-020  Low Input/Output Leakage 


    Original     		PDF BSS138 J-STD-020 MIL-STD-202, AEC-Q101 DS30144 BSS138

    K38 mosfet

    Abstract: BSS138 equivalent equivalent of bss138 bss138 k38 BSS138-7-F
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original     		PDF BSS138 AEC-Q101 J-STD-020 MIL-STD-202, DS30144 K38 mosfet BSS138 equivalent equivalent of bss138 bss138 k38 BSS138-7-F

    BSS138

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA


    Original     		PDF BSS138 200mA AEC-Q101 OT-23 J-STD-020 MIL-STD-202, DS35479 BSS138

    equivalent transistor k38

    Abstract: K38 SOT-23 bss138 k38
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant Note 3


    Original     		PDF BSS138 AEC-Q101 OT-23 OT-23 J-STD-020C MIL-STD-202, DS30144 equivalent transistor k38 K38 SOT-23 bss138 k38

    BSS138-7

    Abstract: BSS138 transistor bss138 bss138 MARKING
    Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


    Original     		PDF BSS138 OT-23 BSS138-7 BSS138 transistor bss138 bss138 MARKING

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V D-S MOSFET SOT-23 FEATURE z High density cell design for extremely low RDS(on) z Rugged and Relaible 1. GATE 2. SOURCE 3. DRAIN MARKING: SS Maximum ratings (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 BSS138 OT-23 500mA

    L55 SOT23

    Abstract: bss138 BSS138 50V
    Text: BSS138 N-Channel Enhancement Mode Vertical DMOS FET BSS138 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling APPLICATIONS


    OCR Scan     		PDF BSS138 BSS138 XBSS138 OT-23 290mA 300jis. 4432E L55 SOT23 BSS138 50V

    BSS138

    Abstract: bss138 MARKING BSS138 50V 0.2A
    Text: BSS138 N-Channel Enhancement Mode Vertical DMOS FET caioqic CORPORATION BSS138 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling


    OCR Scan     		PDF BSS138 BSS138 XBSS138 OT-23 300jis. bss138 MARKING BSS138 50V 0.2A

    PHILIPS DMOS FET

    Abstract: No abstract text available
    Text: Philips Components Data sheet status Preliminary specification BSS138 date of issue September 1990 N-channel enhancem ent m ode vertical D-M O S FET FEATURES PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance. PINNING - SOT223


    OCR Scan     		PDF BSS138 OT223 MB8160 bbS3T31 PHILIPS DMOS FET