tc5118165bj
Abstract: TC5118165 TC5117405 SOJ42-P-400 TC5117405BSJ hidden refresh TSOP70-P-400 TC51181 TC5118 TOSHIBA TSOP50-P-400
Text: TOSHIBA TC5116405BSJ/BST-60 TC5116405BSJ/BST-70 PRELIMINARY 4,194,304 WORD X 4 BIT EDO DYNAMIC RAM Description The TC5116405BSJ/BST is the Hyper Page Mode (EDO) dynamic RAM organized as 4,194,304 words by 4 bits. The TC5116405BSJ/BST utilizes Toshiba’s CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide
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TC5116405BSJ/BST-60
TC5116405BSJ/BST-70
TC5116405BSJ/BST
300mil)
cycles/64ms
TC51V16325BJ:
SOJ70-P-400A
tc5118165bj
TC5118165
TC5117405
SOJ42-P-400
TC5117405BSJ
hidden refresh
TSOP70-P-400
TC51181
TC5118
TOSHIBA TSOP50-P-400
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5118160
Abstract: HYB3118160 HYB5118160
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
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16-Bit
HYB5116160BSJ-50/-60
HYB3116160BSJ/BST
HYB3118160BSJ/BST
HYB5116160
HYB3116160
HYB5118160
HYB3118160
5118160
HYB3118160
HYB5118160
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HYB3116165BSJ
Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
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16-Bit
HYB5116165BSJ-50/-60
HYB3116165BSJ/
HYB3118165BSJ/
HYB5116165
HYB3116165
HYB5118165
HYB3118165
HYB3116165BSJ
HYB3118165
HYB3118165BSJ
HYB5118165
P-TSOP
5118165BSJ-60
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smd code marking wl5
Abstract: Q67100-Q1188 BST60
Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
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HYB3116165BSJ/BST
HYB3118165BSJ/BST
16-Bit
HYB3118165BSJ/BST-50)
HYB3118165BSJ/BST-60)
GPJ05853
HYB3116
165BSJ/BST
P-SOJ-42
smd code marking wl5
Q67100-Q1188
BST60
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Q67100-Q1192
Abstract: WL3 MARKING BST60
Text: HYB3116165BSJ/BST L -50/-60/-70 HYB3118165BSJ/BST(L)-50/-60/-70 1M x 16-Bit EDO- Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature
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HYB3116165BSJ/BST
HYB3118165BSJ/BST
16-Bit
HYB3118165BSJ/BST-50)
HYB3118165BSJ/BST-60)
GPJ05853
HYB3116
165BSJ/BST
P-SOJ-42
Q67100-Q1192
WL3 MARKING
BST60
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BST60
Abstract: No abstract text available
Text: HYB3116160BSJ/BST L -50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance:
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HYB3116160BSJ/BST
HYB3118160BSJ/BST
16-Bit
HYB3118160BSJ/BST-50)
HYB3118160BSJ/BST-60)
HYB3118160BSJAAAAAAAAAAAAAAAAAAA
HYB3116
160BSJ/BST
16-DRAM
BST60
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Q67100-Q1164
Abstract: SIEMENS BST H 05 - 110 SIEMENS BST f 05 90 BST60
Text: HYB 3116160BSJ/BST L -50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k & 4k-Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 ˚C operating temperature Performance:
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3116160BSJ/BST
3118160BSJ/BST
16-Bit
3118160BSJ/BST-50)
3118160BSJ/BST-60)
160BSJ/BST
16-DRAM
GPJ05853
P-SOJ-42
Q67100-Q1164
SIEMENS BST H 05 - 110
SIEMENS BST f 05 90
BST60
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Untitled
Abstract: No abstract text available
Text: Data sheet BMA280 Data sheet Page 1 BMA280 Digital, triaxial acceleration sensor Bosch Sensortec BMA280: Data sheet Document revision 1.6 Document release date 21 May 2013 Document number BST-BMA280-DS000-09 Technical reference code s 0 273 141 148 Notes
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BMA280
BMA280:
BST-BMA280-DS000-09
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Untitled
Abstract: No abstract text available
Text: Data sheet BMA280 Data sheet BMA280 Digital, triaxial acceleration sensor Page 1 Bosch Sensortec BMA280: Data sheet Document revision 1.7 Document release date 12 December 2013 Document number BST-BMA280-DS000-10 Technical reference code s 0 273 141 148 Notes
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BMA280
BMA280:
BST-BMA280-DS000-10
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BST-BMM150-DS001-01
Abstract: BMM150
Text: Data sheet BMM150 Geomagnetic Sensor Bosch Sensortec BMM150: Data sheet Document revision 1.0 Document release date April 25 , 2013 Document number BST-BMM150-DS001-01 Technical reference code s 0 273 141 157 Notes Data in this document are preliminary and subject to change without
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BMM150
BMM150:
BST-BMM150-DS001-01
BMM150
BST-BMM150-DS001-01
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BST-BMC050-DS000-10
Abstract: BMC050
Text: Data sheet BMC050 Electronic Compass Bosch Sensortec BMC050: Data sheet Document revision 1.0 Document release date October 28 , 2011 Document number BST-BMC050-DS000-10 Technical reference code s 0 273 141 124 Notes Data in this document are preliminary and subject to change without
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BMC050
BMC050:
BST-BMC050-DS000-10
BMC050
pack1-10-13
BST-BMC050-DS000-10
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Untitled
Abstract: No abstract text available
Text: Data sheet BMC050 Electronic Compass Bosch Sensortec BMC050: Data sheet Document revision 1.0 Document release date October 28 , 2011 Document number BST-BMC050-DS000-10 Technical reference code s 0 273 141 124 Notes Data in this document are preliminary and subject to change without
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BMC050
BMC050:
BST-BMC050-DS000-10
BMC050
pack1-10-13
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BST-BMC150-DS000-04
Abstract: bosch sensor collection
Text: Data sheet BMC150 6-axis eCompass Bosch Sensortec BMC150: Data sheet Document revision 1.0 Document release date 14 July 2014 Document number BST-BMC150-DS000-04 Technical reference code s 0 273 141 156 Notes Product photos and pictures are for illustration purposes only and may
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BMC150
BMC150:
BST-BMC150-DS000-04
12bit
14-Pin
BST-BMC150-DS000-04
bosch sensor collection
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BST60
Abstract: No abstract text available
Text: TOSHIBA TC5U6400BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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TC5U6400BSJ/BST-60/70
TC5116400BSJ/BST
300mil)
BST60
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BST60
Abstract: No abstract text available
Text: TOSHIBA TC5116400BSJ/BST-6Q/70 MOS DIGITAL INTEGRATED CIRCUIT PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both
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TC5116400BSJ/BST-6Q/70
TC5116400BSJ/BST
300mil)
DR16020794
0027bl3
TC5116400BSJ/BST-60/70
BST60
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SIEMENS BST 68
Abstract: SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST 5118165 SIEMENS BST Q SIEMENS BST N 35 SIEMENS BST G 03 60
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BS J/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
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16-Bit
HYB5116165BSJ-50/-60
HYB3116165BSJ/
HYB3118165BS
P-SOJ-42
P-TSOPI1-50/44
400mil)
SIEMENS BST 68
SIEMENS BST P 45 115
SIEMENS BST P
SIEMENS BST t
SIEMENS BST f 04
SIEMENS BST
5118165
SIEMENS BST Q
SIEMENS BST N 35
SIEMENS BST G 03 60
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BST60
Abstract: No abstract text available
Text: T O S H I B A ^0^7240 OOHôBlS ÔÔ4 • - TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/
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TC5116405BSJ/BST-60
TC5116405BSJ/BST
TC5116405BSJ/
300mil)
DR16060295
i72Mfl
BST60
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SIEMENS BST h 05 90
Abstract: SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60
Text: SIEMENS 1M x 16-Bit Dynamic RAM 1 k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature
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16-Bit
HYB5116160BSJ-50/-60
HYB3116160BSJ/BST
HYB3118160BSJ/BST
HYB5116160
HYB3116160
HYB5118160
HYB3118160
SIEMENS BST h 05 90
SIEMENS BST N 35
SIEMENS BST g 02 60
SIEMENS BST h 05 60
SIEMENS BST P
SIEMENS BST
SIEMENS BST h 05 110
SIEMENS BST l 45 90
160BS
SIEMENS BST G 03 60
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SIEMENS BST
Abstract: SIEMENS BST f 35 80 SIEMENS BST t SIEMENS BST h 35 SIEMENS BST N 45 b 110 SIEMENS BST H 45 90 SIEMENS BST h 05 90 SIEMENS BST f 05 90 BST60
Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 50 60 70
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16-Bit
3116160BSJ/BST
3118160BSJ/BST
3118160BSJ/BST-50)
3118160BSJ/BST-60)
3118160BSAS
160BSJ/BST
16-DRAM
flS3Sb05
SIEMENS BST
SIEMENS BST f 35 80
SIEMENS BST t
SIEMENS BST h 35
SIEMENS BST N 45 b 110
SIEMENS BST H 45 90
SIEMENS BST h 05 90
SIEMENS BST f 05 90
BST60
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SIEMENS BST
Abstract: SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST L 35 90 SIEMENS BST 68 SIEMENS BST h 05 60 SIEMENS BST N 45 b 110 SIEMENS BST H 05 - 110 SIEMENS BST h 05 20
Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70
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16-Bit
3116160BSJ/BST
3118160BSJ/BST
3118160BSJ/BST-50)
3118160BSJ/BST-60)
3118160BSJ/BST-70)
3116160BSJ/BST-50)
3116160BSJ/BST-60)
160BSJ/BST
SIEMENS BST
SIEMENS BST h 05 90
SIEMENS BST h 05 110
SIEMENS BST h 35
SIEMENS BST L 35 90
SIEMENS BST 68
SIEMENS BST h 05 60
SIEMENS BST N 45 b 110
SIEMENS BST H 05 - 110
SIEMENS BST h 05 20
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SIEMENS BST
Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
Text: SIEMENS 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-50/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC
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16-Bit
3116165BSJ/BST
3118165BSJ/BST
3118165BSJ/BST-50)
3118165BSJ/BST-60)
165BSJ/BST
SIEMENS BST
SIEMENS BST t
SIEMENS BST h 35
SIEMENS BST L 35 90
BST70
BST60
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csr bc4
Abstract: TC5116400BSJ BST60
Text: TOSHIBA m C|C]t:,724fl QD2fl2Ci;L 510 • -TC5116400BSJ/BSTW70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. TheTC5116400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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724fl
TC5116400BSJ/BSTW70
TC5116400BSJ/BST
300mil)
csr bc4
TC5116400BSJ
BST60
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d8430
Abstract: 18165BSJ-60 BST60
Text: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 3116165BSJ/BST(L)-5Q/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time
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16-Bit
3116165BSJ/BST
-5Q/-60/-70
3118165BSJ/BST
3118165BSJ/BST-50)
3118165BSJ/BST-60)
3118165BSJ/BST-70)
3116165BSJ/BST-50)
3116165BSJ/BST-60)
d8430
18165BSJ-60
BST60
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BST60
Abstract: No abstract text available
Text: TOSHIBA TC5116405BSJ/BST60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The T C 51 16405BSJ/BST is the new generation dynamic RAM organized 4,194,304 w ord by 4 bits. The T C 51 16405B SJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat
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TC5116405BSJ/BST60
16405BSJ/BST
16405B
TC5116405BSJ/BST
300mil)
TC5116405BS
J/BST-60
DR16060295
BST60
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