FBGA672
Abstract: IOAD16 8 IOG20 AGILENT TECHNOLOGIES 3070 ioa18 ieee 1532 EPC16 EPF81500A EPF8282A EPF8636A
Text: IEEE 1149.1 JTAG Boundary-Scan Testing in Altera Devices June 2005, ver. 6.0 Introduction Application Note 39 As printed circuit boards PCBs become more complex, the need for thorough testing becomes increasingly important. Advances in surfacemount packaging and PCB manufacturing have resulted in smaller
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1980s,
FBGA672
IOAD16 8
IOG20
AGILENT TECHNOLOGIES 3070
ioa18
ieee 1532
EPC16
EPF81500A
EPF8282A
EPF8636A
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PDF
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FBGA672
Abstract: ioa18 fbga672 paging EPF8282A EPF8282AV EPF8636A EPF8820A EPM7032S EPM7064S AGILENT TECHNOLOGIES 3070
Text: IEEE 1149.1 JTAG Boundary-Scan Testing in Altera Devices June 2005, ver. 6.0 Introduction Application Note 39 As printed circuit boards (PCBs) become more complex, the need for thorough testing becomes increasingly important. Advances in surfacemount packaging and PCB manufacturing have resulted in smaller
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Original
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1980s,
FBGA672
ioa18
fbga672 paging
EPF8282A
EPF8282AV
EPF8636A
EPF8820A
EPM7032S
EPM7064S
AGILENT TECHNOLOGIES 3070
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PDF
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Hitachi DSA002754
Abstract: Nippon capacitors
Text: HB52R168DB-F 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components ADE-203-1098 (Z) Preliminary Rev. 0.0 Sep. 3, 1999 Description The HB52R168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory
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HB52R168DB-F
16-Mword
64-bit,
ADE-203-1098
HB52R168DB
64-Mbit
HM5264405FTB)
144-pin
Hitachi DSA002754
Nippon capacitors
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PDF
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BC149C
Abstract: HB52R168DB-10DL Hitachi DSA00164 Nippon capacitors
Text: HB52R168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components ADE-203-973 (Z) Preliminary, Rev. 0.0 Nov. 6, 1998 Description The HB52R168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line
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HB52R168DB-D
16-Mword
64-bit,
ADE-203-973
HB52R168DB
64-Mbit
HM5264405DTB)
144-pin
BC149C
HB52R168DB-10DL
Hitachi DSA00164
Nippon capacitors
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PDF
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Hitachi DSA00164
Abstract: Nippon capacitors
Text: HB52R168DB-F 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components ADE-203-1098A (Z) Rev. 1.0 Jan. 24, 2000 Description The HB52R168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory
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HB52R168DB-F
16-Mword
64-bit,
ADE-203-1098A
HB52R168DB
64-Mbit
HM5264405FTB)
144-pin
Hitachi DSA00164
Nippon capacitors
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PDF
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BSW 002 2nd year date sheet
Abstract: HB52R168DB-10 HB52R168DB-10L HM5264405TB Hitachi DSA00196 Nippon capacitors
Text: HB52R168DB Series 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M × 4 components ADE-203-886A (Z) Rev. 1.0 Jul. 15, 1998 Description The HB52R168DB is a 16M × 64 × 1 bank Synchronous Dynamic RAM Small Outline Dual In-line Memory
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HB52R168DB
16-Mword
64-bit,
ADE-203-886A
64-Mbit
HM5264405TB)
144-pin
BSW 002 2nd year date sheet
HB52R168DB-10
HB52R168DB-10L
HM5264405TB
Hitachi DSA00196
Nippon capacitors
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PDF
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ty9000
Abstract: TY9000A 1g nand mcp TY9000A000CMGF SD4051 TY9000A000 tc58dyg02f2 nand toshiba ty9000 FBGA149 toshiba mcp
Text: TY9000A000CMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A000CMGF is a mixed multi-chip package containing a 536,870,912-bit Low Power Synchronous
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TY9000A000CMGF
TY9000A000CMGF
912-bit
256-bit
149-pin
P-FBGA149-1013-0
N-29/29
ty9000
TY9000A
1g nand mcp
SD4051
TY9000A000
tc58dyg02f2
nand toshiba ty9000
FBGA149
toshiba mcp
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PDF
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TY9000
Abstract: MCP 256M nand toshiba toshiba mcp nand toshiba mcp ty900 TY90009 512M x 8 Bit nand FBGA149 toshiba nand TM TY90009400FMGF
Text: TY90009400FMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400FMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices
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TY90009400FMGF
TY90009400FMGF
912-bit
456-bit
128-bit
149-pin
P-FBGA149-1013-0
N-29/29
TY9000
MCP 256M nand toshiba
toshiba mcp nand
toshiba mcp
ty900
TY90009
512M x 8 Bit nand
FBGA149
toshiba nand TM
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PDF
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ty9000
Abstract: TY9000A ty9000a400 MCP 256M nand toshiba TY9000A400BMGF 1g nand mcp toshiba mcp 512M nand mcp ty90 MCP 1g nand toshiba
Text: TY9000A400BMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY9000A400BMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices
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TY9000A400BMGF
TY9000A400BMGF
912-bit
456-bit
256-bit
149-pin
P-FBGA149-1013-0
N-29/29
ty9000
TY9000A
ty9000a400
MCP 256M nand toshiba
1g nand mcp
toshiba mcp
512M nand mcp
ty90
MCP 1g nand toshiba
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PDF
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ty9000
Abstract: MCP 256M nand toshiba ty90 TY90009400DMGF toshiba mcp ty900 nand toshiba ty9000 FBGA149 toshiba nand TM P-FBGA149-1013-0
Text: TY90009400DMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY90009400DMGF is a mixed multi-chip package containing a 536,870,912-bit 268,435,456-bit x 2devices
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Original
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TY90009400DMGF
TY90009400DMGF
912-bit
456-bit
128-bit
149-pin
P-FBGA149-1013-0
N-29/29
ty9000
MCP 256M nand toshiba
ty90
toshiba mcp
ty900
nand toshiba ty9000
FBGA149
toshiba nand TM
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PDF
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MCP 256M nand toshiba
Abstract: TY80009000AMGF toshiba mcp FBGA149 toshiba mcp nand 512M nand mcp nand sdram mcp TOSHIBA M9
Text: TY80009000AMGF TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS Low Power SDRAM and Nand E2PROM Mixed Multi-Chip Package Lead-Free DESCRIPTION The TY80009000AMGF is a mixed multi-chip package containing a 268,435,456-bit Low Power Synchronous DRAM and a 553,648,128-bit Nand E2PROM. The TY80009000AMGF is available in a 149-pin BGA package
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TY80009000AMGF
TY80009000AMGF
456-bit
128-bit
149-pin
P-FBGA149-1013-0
N-39/39
MCP 256M nand toshiba
toshiba mcp
FBGA149
toshiba mcp nand
512M nand mcp
nand sdram mcp
TOSHIBA M9
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PDF
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F1022
Abstract: f1031 MC19 PZ3960C7EB PZ3960N8EB sot514 F929 F926 Philips F423 f811
Text: INTEGRATED CIRCUITS PZ3960C/PZ3960N 960 macrocell SRAM CPLD Preliminary specification Supersedes data of 1998 Jan 21 IC27 Data Handbook Philips Semiconductors 1998 Jul 21 Philips Semiconductors Preliminary specification 960 macrocell SRAM CPLD PZ3960C/PZ3960N
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PZ3960C/PZ3960N
CPLD--960
PZ3960
F1022
f1031
MC19
PZ3960C7EB
PZ3960N8EB
sot514
F929
F926
Philips F423
f811
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PDF
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F9222
Abstract: 05464 MC19 PZ3960C7EB PZ3960N8EB F9328 F9221 f9114 F6222 F9220
Text: INTEGRATED CIRCUITS PZ3960C/PZ3960N 960 macrocell SRAM CPLD Product specification Supersedes data of 1998 Sep 28 IC27 Data Handbook Philips Semiconductors 1999 Mar 18 Philips Semiconductors Product specification 960 macrocell SRAM CPLD PZ3960C/PZ3960N FEATURES
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PZ3960C/PZ3960N
CPLD--960
PZ3960
F9222
05464
MC19
PZ3960C7EB
PZ3960N8EB
F9328
F9221
f9114
F6222
F9220
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PDF
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rpack8 56
Abstract: HDR2x7 rpack8 PCI_T32 MegaCore EPM3256ATC144-7 ERJ-3GEYJ101 APEX20K400E "APEX PCI development board" EP20K400EFC672-1X OSC50MHZ
Text: APEX PCI Development Board April 2002, ver. 2.1 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ General Description Altera Corporation DS-A20KEPCI-2.1 Included with the APEXTM PCI development kit Rapid prototyping platform for both PCI systems and desktop
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DS-A20KEPCI-2
64-bit,
66-MHz
EP20K400EFC672
PCI-BOARD/A10E
EP20K1000EFC672
33-MHz
PCI-BOARD/A10C
EP20K1000CF672
rpack8 56
HDR2x7
rpack8
PCI_T32 MegaCore
EPM3256ATC144-7
ERJ-3GEYJ101
APEX20K400E
"APEX PCI development board"
EP20K400EFC672-1X
OSC50MHZ
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PDF
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RTSX32SU CQ84 PROTO
Abstract: RTSX32SU CQ84 RTSX72SU1 SOC 8A fuse smd RTSX32su CG624 thermal expansion
Text: Revision 9 RTSX-SU Radiation-Tolerant FPGAs UMC Designed for Space • SEU-Hardened Registers Eliminate the Need to Implement Triple-Module Redundancy (TMR) – Immune to Single Event Upsets (SEU) to LETth > 40 MeVcm2/mg, – SEU Rate < 10–10 Upset/Bit-Day in Worst-Case
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TM1019
RTSX32SU CQ84 PROTO
RTSX32SU CQ84
RTSX72SU1
SOC 8A fuse smd
RTSX32su
CG624 thermal expansion
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PDF
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A54SX08
Abstract: A54SX08A A54SX16 A54SX16A A54SX32 A54SX32A A54SX72A PAR64
Text: v3.0 SX-A Family FPGAs Le a di n g- E d ge P er f o r m a n ce • Configurable I/O Support for 3.3V/5.0V PCI, 5.0V TTL, and 2.5 V/3.3V LVTTL • 2.5V, 3.3V, and 5.0V Mixed Voltage Operation with 5.0V Input Tolerance and 5.0V Drive Strength • Configurable Weak-Resistor Pull-up or Pull-down for
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A54SX16A
Abstract: A54SX08 A54SX08A A54SX16 A54SX32 A54SX32A A54SX72A PAR64 REQ64 antifuse programming technology
Text: Preliminary v1.2 SX-A Family FPGAs Le a di n g- E d ge P er f o r m a n ce • Configurable I/O Support for 3.3V/5.0V PCI, 5.0V TTL, and 2.5 V/3.3V LVTTL • 2.5V, 3.3V, and 5.0V Mixed Voltage Operation with 5.0V Input Tolerance and 5.0V Drive Strength • Configurable Weak-Resistor Pull-up or Pull-down for
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22B2 DIODE
Abstract: A54SX08A A54SX16A A54SX32A A54SX72A PQ208 TQ100 TQ144 TQ176
Text: v5.2 SX-A Family FPGAs u e Leading-Edge Performance • • • 250 MHz System Performance 350 MHz Internal Performance • • • Specifications • • • • • • 12,000 to 108,000 Available System Gates Up to 360 User-Programmable I/O Pins Up to 2,012 Dedicated Flip-Flops
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22B2 DIODE
Abstract: RTSX-S datasheet SX FPGAs A54SX08A A54SX16A A54SX32A A54SX72A PQ208 TQ100 TQ144
Text: v5.1 SX-A Family FPGAs Leading-Edge Performance • • • 250 MHz System Performance 350 MHz Internal Performance • • • Specifications • • • • • • 12,000 to 108,000 Available System Gates Up to 360 User-Programmable I/O Pins Up to 2,012 Dedicated Flip-Flops
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vdr10
Abstract: ADC12D1800 DQD-11 CY7C68013A-128AXC semiconductor c243 ADC12D1600 c185 transistor ADC12D1000RB ece r10 CY7C68013A
Text: 5 4 3 2 1 ADC12D1XXX Reference Board D D REFERENCE DESIGN SPECIAL NOTES C C These schematics reflect the current state of product development. This design had NOT yet been fully tested at the time these schematics were generated. Since this product is in development, the user of this document is
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ADC12D1XXX
11x17"
LMX2531
ADC10D1000-RB
vdr10
ADC12D1800
DQD-11
CY7C68013A-128AXC
semiconductor c243
ADC12D1600
c185 transistor
ADC12D1000RB
ece r10
CY7C68013A
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PDF
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RSV02
Abstract: C245 CY7C68013A-128AXC HEADER 10x3 transistor c114 digital ADC10D1000 11X17 VDR14 XCF08PVO48
Text: 5 4 3 2 1 ADC10D1000 Reference Board D D REFERENCE DESIGN SPECIAL NOTES C C These schematics reflect the current state of product development. This design had NOT yet been fully tested at the time these schematics were generated. Since this product is in development, the user of this document is
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ADC10D1000
11x17"
LMX2531
ADC10D1000-RB
RSV02
C245
CY7C68013A-128AXC
HEADER 10x3
transistor c114 digital
11X17
VDR14
XCF08PVO48
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BT 816 triac
Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Text: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag
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Untitled
Abstract: No abstract text available
Text: HB52R168DB-D 128 MB Unbuffered SDRAM S.O.DIMM 16-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 16 pcs of 16 M x 4 components HITACHI ADE-203-973 (Z) Preliminary, Rev. 0.0 Nov. 6, 1998 Description The HB52R168DB is a 16M x 64 x 1 bank Synchronous Dynamic RAM Small Outline Dual In-line
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OCR Scan
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HB52R168DB-D
16-Mword
64-bit,
ADE-203-973
HB52R168DB
64-Mbit
HM5264405DTB)
144-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: v3.0 SX-A Family FPGAs Leading-Edge P erfo rm an c e • 250 MHz System Performance • 3.8ns Clock-to-Out Pad-to-Pad • 350 MHz Internal Performance S p ec ific atio n s • • • • 12,000 to 108,000 Available System Gates Up to 360 User-Programmable I/O Pins
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OCR Scan
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22p/0
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