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    BUK482-1 Price and Stock

    Philips Semiconductors BUK482100A

    POWERMOS TRANSISTOR Power Field-Effect Transistor, 1.8A I(D), 100V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA BUK482100A 1,993
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    NXP Semiconductors BUK482-100A

    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Terminal Finish: MATTE TIN; Maximum Pulsed Drain Current (IDM): 7.2 A;
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    Vyrian BUK482-100A 383
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    BUK482-1 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK482-100A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK482-100A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUK482-100A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK482-100AT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF