BUK7606-55B |
|
NXP Semiconductors
|
BUK7606-55B - TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 19 nC; RDS(on): 6@10V mOhm; Thermal Resistance: 0.59 K/W; VDSmax: 55 V |
|
Original |
PDF
|
BUK7606-55B |
|
Philips Semiconductors
|
TrenchMOS standard level FET |
|
Original |
PDF
|
BUK7606-55B,118 |
|
NXP Semiconductors
|
TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 19 nC; RDS(on): 6@10V mOhm; Thermal Resistance: 0.59 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
|
Original |
PDF
|
BUK7606-55B,118 |
|
NXP Semiconductors
|
BUK7606-55 - TRANSISTOR 145 A, 55 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
|
Original |
PDF
|
BUK7606-55B/T3 |
|
NXP Semiconductors
|
TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 19 nC; RDS(on): 6@10V mOhm; Thermal Resistance: 0.59 K/W; VDSmax: 55 V |
|
Original |
PDF
|