BUS22B Search Results

BUS22B Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BUS22B		Philips Semiconductors	Silicon Diffused Power Transistor		Original	PDF
BUS22B		Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package		Original	PDF
BUS22B		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF
BUS22B		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BUS22B		Philips Semiconductors	High Speed, High Voltage Transistors		Scan	PDF

BUS22B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUS22C Abstract: 9v dc motor NPN Transistor 1A 400V BUS22B Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS22B/C DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min)-BUS22B 450V (Min)-BUS22C APPLICATIONS ·Designed for use in converters, inverters, switching	Original	BUS22B/C -BUS22B -BUS22C BUS22B BUS22C BUS22C 9v dc motor NPN Transistor 1A 400V BUS22B	PDF
BUS22 Abstract: No abstract text available Text: BUS22B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	BUS22B O204AE) 18-Jun-02 BUS22	PDF
Untitled Abstract: No abstract text available Text: BUS22B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	BUS22B O204AE) 17-Jul-02	PDF
BUS22B Abstract: No abstract text available Text: BUS22B Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	BUS22B O204AE) 1-Aug-02 BUS22B	PDF
IDC2555 Abstract: TIPL763A BU526 2N630B 250n Text: POWER SILICON NPN Item Number Part Number V I C) 5 10 15 20 25 30 55 60 65 70 75 BO B5 90 95 Max (Hz) leBO Max (A t, Max Tope, Max (I) eC) Package Style >= 5 A, (Cont'd) B.O B.O B.O B.O B.O B.O B.O B.O B.O B.O 350 350 350 350 350 350 350 350 350 350 4.0 4.0	Original		PDF
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8	PDF
buw13a philips semiconductor Abstract: 180NS mje13008 BUS12 BUS12A BUT12 BUT12A BUT18 BUS13 BUT18AF Text: N AUER PHILIPS/DISCRETEL ESE D • bbS HÌBl 001b521 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4A/0.8A 180ns at 4A	OCR Scan	S3T31 BUT18 O-220AB 180ns BUT18A BUT18F OT-186 BUT18AF BUT12 buw13a philips semiconductor mje13008 BUS12 BUS12A BUT12A BUS13 BUT18AF	PDF
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE, BSE D • QOlbEEl fl ■ T~3 I Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. V CE(*at) MAX. at lc/lB tftyp at lc (Inductive load) 400V 450V 1,5V at 4A /0.8A 180ns at 4A 850V 1000V 400V 450V 1.5V at 4 A /0.8A 180ns at 4A	OCR Scan	180ns OT-93 400ns BUV298AV BUV298V OT-227B1 -220AB BUT18F	PDF
buw13a philips semiconductor Abstract: BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V Text: BSE J> N AUER PHILIPS/DISCRETE • bbS3T31 001bE21 Ö ■ Power Devices HIGH SPEED, HIGH VOLTAGE TRANSISTORS cont. TYPE NO. PACKAGE OUTLINE •cfDOt1) 6A v CE(*at) MAX. at lc/lB t ft y p a tlc (Inductive load) 400V 450V 1.5V at 4A/0.8A 180ns at 4A 850V 1000V	OCR Scan	bki53T31 BUT18 BUT18A O-220AB 180ns BUT18F BUT18AF OT-186 BUT12 buw13a philips semiconductor BUT22A BUT228 BUP23A SOT93 BUT18 PHILIPS SEMICONDUCTOR mje13008 SOT-93 bus13 philips transistor VCE 1000V	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE BSE D ^ 53=131 0 0 1 3 7 4 3 4 • BUS22 SERIES T - . S 3 - I 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.	OCR Scan	BUS22 RUS22B BUS22C dis00 BUS22B BUS22B; BUS22C.	PDF
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G	PDF