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    BUV50 AT MICROELECTRONICS Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    BUV50

    Abstract: No abstract text available
    Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN


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    BUV50 125oC BUV50 PDF

    BUV50

    Abstract: BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR
    Text: BUV50 HIGH POWER NPN SILICON TRANSISTOR • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ DESCRIPTION The BUV50 is a Multiepitaxial planar NPN


    Original
    BUV50 125oC BUV50 BUV50 AT MICROELECTRONICS HIGH POWER NPN SILICON TRANSISTOR PDF

    BUV50

    Abstract: No abstract text available
    Text: BUV50 SILICON NPN TRANSISTOR n n n FAST SWITCHING TIMES LOW SWITCHING LOSSES VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit V V CEV Collector-Emitter Voltage V BE = -1.5V


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    BUV50 BUV50 PDF

    BUV50

    Abstract: No abstract text available
    Text: SGS-THOMSON BUV50 im HIGH POWER NPN SILICON TRANSISTOR . . • . ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERISED AT 125°C APPLICATIO N . SWITCHING REGULATORS ■ MOTOR COISTTROL D ESCRIP TIO N


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    BUV50 BUV50 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF