BUX 128 Search Results

BUX 128 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent	PDF
sf 818 d Abstract: NPN 337 SU 179 sf 819 d SF 127 Funkamateur SMD NF sf 118 d sd 339 NF 847 G Text: IC, ICsat [mA, A ] 600 -100 -100 -100 -100 100 100 100 100 100 100 -100 -100 -100 100 100 100 -100 -100 -100 (1) (-1) (1) (-1) (1) (-1) (3) (1,5) (-1,5) (1,5) (-1,5) (1,5) (-1,5) * [MHz] ≥ 250 90 90 90 90 ≥ 300 ≥ 300 145 145 161 175 350 350 350 185	Original		PDF
CI 13007 Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471 Text: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA	OCR Scan	ST24C02 TS59C11 TS93C46 M9306 M9346 CI 13007 bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471	PDF
SSY20 Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3	OCR Scan		PDF
Transistoren DDR Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369 Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60	OCR Scan	SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369	PDF
BU406 Abstract: BU407 N-P-N SILICON POWER TRANSISTORS t317 texas transistors Text: TEXAS I N S T R -COPTO} ÔÔ61726 TEXAS ta INSTR DE \| f l cltI17Bt. 003titi3S 62C 3 6 6 3 5 OPTO BU406, BU407 N-P-N SILICON POWER TRANSISTORS - T - 2 3 - U O C T O B E R 1 9 8 2 - R E V IS E D O C T O B E R 1 9 8 4 • 60 W a t 2 5 ° C Case Temperature	OCR Scan	GG3bb35 BU406, BU407 110-Degree to-220ab BU406 BU407 300fis, 003bb3T N-P-N SILICON POWER TRANSISTORS t317 texas transistors	PDF
TFK diodes BYW 76 Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35	OCR Scan		PDF
BUX83 Abstract: BUX82 gg3b Text: TEX AS INSTR {OPTO} “§ 9 6 1 7 2 6 TEXAS b2 IN STR » riflT h lT E b 62C O P T O QG3bbb3 36663 B IIY Q 3 RI IY Q Q N-P-N SILICON POWER TRANSISTORS O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 60 W at 5 0 ° C C ase Temperature 6 A Continuous Collector Current	OCR Scan	BUX82 BUX83 BUX83 gg3b	PDF
BUX47A Abstract: BUX47 BUX47B BY205-400 Text: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE \| 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current	OCR Scan	003bb41 BUX47, BUX47A, BUX47B BUX47 BUX47A BY205-400	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
BUX47A Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET Text: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE \| 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current	OCR Scan	tbl75b BUX47, BUX47A, BUX47B bux47a 1ux47b BUX47 t-35-/s BUX47A BY205-400 silicon power transistors T35 ET	PDF
Untitled Abstract: No abstract text available Text: TEXAS INSTR {OPTO} Ö 9 6 1 7 2 6 T EX A S D G3 bb b 3 IN S T R 62C O PTO 36663 B IIY Q 3 RI IYQ*5 N-P-N SILICON POWER TRANSISTORS Y - 3 s ~ n OCTOBER 1982 - REVISED OCTOBER 19B4 60 W at 5 0 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current	OCR Scan		PDF
BDX 625 Abstract: BUX 115 BD 896 898A D896 BD PNP BD900 BD902 Text: TE XA S IN S T R -COPTO} ~k2 QQBLbOS A i 62C 36605 BD896, BD896A,BD898, BD898A, BD900, BD900A, BD902 P-N-P SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 ' " . V — 70 W a t 2 5 ° C Case Temperature T -3 3 -3 1 8 A Continuous Collector Current Min Hf E of 7 5 0 at 3 A or 4 A	OCR Scan	BD896, BD896A BD898, BD898A, BD900, BD900A, BD902 T0-22Q BD896 BDX 625 BUX 115 BD 896 898A D896 BD PNP BD900	PDF
D895 Abstract: BD 895 bdw 34 a Text: b5 TEXAS INSTR -COPTO* DeT \| ST b lT H b DDBbS^'ì 62C 3 6 5 9 9 8961726 TEXAS INSTR <OPTO> BD895, BD895A,BD897, BD897A, BD899, BD899A, BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 T-33-29 • 70 W a t 2 5 °C Case Temperature • 8 A Continuous Collector Current	OCR Scan	BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 -220AB BD895 D895 BD 895 bdw 34 a	PDF

BD898 Abstract: BD900 BD902 BD896 BD896A BD898A BD900A 7150A 562C Text: TEXAS IN STR - COP TOJ DDBLbDS 62C 36605 BD896, BD896A,BD898, BD898A, BD900, BD900A, BD902 P-N-P SILICON POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 ' " > • 70 W a t 2 5 ° C Case Temperature • 8 A Continuous Collector Current T -3 3 -3 1 •	OCR Scan	BD896, BD896A BD898, BD898A, BD900, BD900A, BD902 T-33-31 O-22QAB BD896 BD898 BD900 BD898A BD900A 7150A 562C	PDF
BU 450 bdx Abstract: l75b Text: TEXAS INSTR Î0PTÔ3D F f lT b l7 5 b Ö 9 6 1 7 2 6 T EX A S IN S T R <OPTO) 0 0 3 ^ ^ 62C 3 6 6 6 9 BUX84, BUX85 N-P-N SILICON POWER TRANSISTORS T NOVEMBER 1983 - REVISED OCTOBER 1984 4 0 W at 2 5 ° C Case Temperature 2 A Continuous Collector Current 3 A Peak Collector Current	OCR Scan	BUX84, BUX85 T0-22QAB hti73 T-33-// BU 450 bdx l75b	PDF
RPY 86 Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1 Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ	OCR Scan		PDF
Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan		PDF
X53A Abstract: BDX63A Text: texas~ instr -c o p t o j bs dF \| 003t,bi? =i _ T-33-29_ — g§5T7^~TEXAS 62 C INSTR OPTO 36617 D BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1 9 8 4 60 W at 25°C Case Temperature 8 A Continuous Collector Current	OCR Scan	T-33-29_ BDX53, BDX53A, BDX53B, BDX53C X53A BDX63A	PDF
T726 Abstract: 1N914 BDX53 BDX53A BDX53B BDX53C BDX63 BDX63A 60si50 ION-M Text: T E X A S IN ST R bE -COPTO} D eT\| STblVSb DD3thl7 1 _T-33-29_ — g§5T7^~TEXAS~TNSTR 62C 36617 COPTO BDX53, BDX53A, BDX53B, BDX53C N-P-N SILICON POWER DARLINGTONS R E V IS E D O C TO B E R 1 9 8 4 60 W at 2 5 °C Case Temperature	OCR Scan	T-33-29 BDX53, BDX53A, BDX53B, BDX53C T0-220AB BDX63 BDX63A BDX53B BDX53C T726 1N914 BDX53 BDX53A 60si50 ION-M	PDF
UAA4002 Abstract: UAA 4002 buv 48 SOA bux DIODE Text: V - ’ M fJV - J oj - L 1- - UM 'j \ -'J-1 - V u A designer using switching transistors needs an an swer to the follow ing questions: What are the current sharing requirements between paralleled transistors? W hat base current is necessary if the transistor is	OCR Scan		PDF
BU 450 bdx Abstract: bux81 Text: TEXAS INSTR COPTO} b5 DFIflTblTab 003bbS7 □ 62C 8 9 6 1 7 2 6 TEXAS INSTR < Ö P T Ü 7 3Ò 657 BUX80 BUX81 N-P-N SILICON POWER TRANSISTORS / ~ J 3 - / 3 OCTOBER 1982 - REVISED OCTOBER 1984 150 W at 2 5 ° C C ase Temperature 10 A Continuous Collector Current	OCR Scan	003bbS7 BUX80 BUX81 T-33-/3 BU 450 bdx	PDF
LDR 03 Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12 Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren	OCR Scan		PDF
BDX54 Abstract: BDX54A BDX54B BDX54C BDX54 circuit Text: TEXAS IN STR -COPTO} t.B r D E jflT b ^ E b DOatibEB _ S 9 6 1 T 2 6 TEX A S IN S T R O P T Ò T T-33-31 62C 3 6 6 2 3 D BDX54, BDX54A, BDX54B, BDX54C P-N-P SILICON POWER DARLINGTONS R E V IS E D O C T O B E R 1 9 8 4 • 60 W at 25°C Case Temperature	OCR Scan	8T726-TEXÃ T-33-31 BDX54, BDX54A, BDX54B, BDX54C T0-220AB BDX54 BDX54A BDX54B BDX54 circuit	PDF

BUX 128 Search Results

BUX 128 Datasheets Context Search

"Tektronix 475"

sf 818 d

CI 13007

SSY20

Transistoren DDR

BU406

TFK diodes BYW 76

BUX83

BUX47A

ksd 302 250v, 10a

BUX47A

Untitled

BDX 625

D895

BD898

BU 450 bdx

RPY 86

Transistor 2SA 2SB 2SC 2SD

X53A

T726

UAA4002

BU 450 bdx

LDR 03

BDX54