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    BUZ11 AVALANCHE Search Results

    BUZ11 AVALANCHE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR4211TH-AZ Renesas Electronics Corporation Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications Visit Renesas Electronics Corporation

    BUZ11 AVALANCHE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ11

    Abstract: buz11 equivalent BUZ11 in electronic pulse schematic buz11 motor control
    Text: BUZ11 N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET TYPE BUZ11 • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ11 O-220 175oC BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic buz11 motor control

    buz11 equivalent

    Abstract: BUZ11FI BUZ11 BUZ11 in electronic pulse schematic
    Text: BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ11 BUZ11FI 100oC 175oC O-220 ISOWATT220 buz11 equivalent BUZ11FI BUZ11 BUZ11 in electronic pulse schematic

    BUZ11

    Abstract: buz11 equivalent BUZ11 in electronic pulse schematic datecode G1
    Text: BUZ11  N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET T YPE BUZ11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 30 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ11 -TO-220 175oC O-220 BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic datecode G1

    BUZ11

    Abstract: BUZ11FI buz11 motor control C3621
    Text: BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF BUZ11 BUZ11FI 100oC 175oC O-220 ISOWATT220 BUZ11 BUZ11FI buz11 motor control C3621

    BUZ11

    Abstract: No abstract text available
    Text: ^zmi-Conauctoi L/^ioaucti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ11 N - CHANNEL 50V - 0.03Q - 33A TO-220 STripFET MOSFET TYPE BUZ11 VDSS RDS(on) ID 50 V < 0.04 ii 33 A TYPICAL Ros(on) = 0.03 Q


    Original     		PDF BUZ11 O-220 BUZ11

    BUZ11

    Abstract: buz11 equivalent BUZ11 in electronic pulse schematic 620 tg diode datecode G1 mosfet schematic solenoid driver stmicroelectronics datecode TO-220
    Text: BUZ11  N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET MOSFET T YPE BUZ 11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 33 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE


    Original     		PDF BUZ11 O-220 175oC BUZ11 buz11 equivalent BUZ11 in electronic pulse schematic 620 tg diode datecode G1 mosfet schematic solenoid driver stmicroelectronics datecode TO-220

    STripFET

    Abstract: k12n06 STP50N05 k12n06l MTP3055E Si4412DY STD17N06L Si9410DY Si9936DY STP55N06L
    Text: STRIPFET AN UPDATE OF OUR “NE” SERIES LOW VOLTAGE POWER MOSFETs The continuous downward price pressure has forced all suppliers to optimize silicon and implement consequent product rationalization. This trend is particularly true for low voltage Power MOSFETs, where


    Original     		PDF conventionalTD17N06 Si9945AEY STK17N10 STP20N10 BUZ21 STB80N03L-06 STP80N03L-06 STB60N03L-10 STP60N03L-10 STB40N03L-20 STripFET k12n06 STP50N05 k12n06l MTP3055E Si4412DY STD17N06L Si9410DY Si9936DY STP55N06L

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent

    BUT11APX equivalent

    Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
    Text: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		PDF BT148-600R BT148-400R BUT11APX equivalent BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 N - CHANNEL 50V - 0.03ft - 30A -TO-220 STripFET POWER MOSFET TYPE BUZ11 V R dss 50 V d Id S o ii < 0 .0 4 Q. 30 A . • TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE


    OCR Scan     		PDF BUZ11 -TO-220

    buz11

    Abstract: buz11 motor control BUZ11 avalanche GC35620 airbag
    Text: rz 7 SCS-THOMSON Ä 7# RKMilLifg «! BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI I V dss RüS on Id 50 V 50 V 0.04 Q 0.04 n 36 A 20 A • . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF BUZ11 BUZ11FI O-220 ISOWATT220 CC35701 buz11 motor control BUZ11 avalanche GC35620 airbag

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON œ y [ E J O T Q BUZ11 BUZ11FI * S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI V dss 50 V 50 V R dS(oii Id 0.04 Li 0.04 LI 36 A 20 A . . . . . . AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANC HE DATA AT 100°C


    OCR Scan     		PDF BUZ11 BUZ11FI O-220 ISOWATT22Û ISOWATT22Q ATT220 BUZ11/FI

    Untitled

    Abstract: No abstract text available
    Text: BUZ11A N - CHANNEL 50V - 0.045ft - 26A -TO-220 STripFET POWER MOSFET TYPE BUZ11 A V Id R D S o n dss 50 V < 0 .0 5 5 . Q. 26 A . TYPICAL Ros(on) = 0.045 £2 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE


    OCR Scan     		PDF BUZ11A 045ft -TO-220 BUZ11

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON iLiOM iQ £I TY PE BUZ11 BU Z11FI bu zu BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS(on) Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A • T Y P IC A L R DS(on) = 0.03 Q . . ■ ■ . ■ AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		PDF BUZ11 Z11FI BUZ11FI

    Untitled

    Abstract: No abstract text available
    Text: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED


    OCR Scan     		PDF BUZ11 BUZ11FI BUZ11/FI ISQWATT220

    BUZ11S2

    Abstract: buz11 siemens
    Text: SIEMENS BUZ11S2 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vfcs to ^JS on Package Ordering Code BUZ 11 S2 60 V 30 A 0.04 £2 TO-220 AB C67078-S1301-A5 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF BUZ11S2 O-220 C67078-S1301-A5 BUZ11 BUZ11S2 buz11 siemens

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    5n05e

    Abstract: mtp45n MTM45N05E
    Text: MOTOROLA • I SEM ICONDUCTOR TECHNICAL DATA M T M 4 5N 0 5E M T P 45N 05E Designer's Data Sheet T M O S IV P o w er Field E ffe c t Transistors N-Channel Enhancement-Mode Silicon Gate T his advanced " E " series o f TMOS p o w e r MOSFETs is designed to w ith s ta n d high


    OCR Scan     		PDF 97A-02 MTM45N05E 21A-04 MTP45N05E 5n05e mtp45n

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845