BUZ11A
Abstract: No abstract text available
Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE
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BUZ11A
100oC
175oC
O-220
BUZ11A
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buz11a circuit
Abstract: BUZ11A
Text: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE
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BUZ11A
100oC
175oC
O-220
buz11a circuit
BUZ11A
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buz11a circuit
Abstract: BUZ11A st buz11a ISD 1400 d BUZ11A data
Text: BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ11A
O-220
175oC
50ghts
buz11a circuit
BUZ11A
st buz11a
ISD 1400 d
BUZ11A data
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BUZ11A
Abstract: buz11a circuit datecode G1
Text: BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET TYPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ11A
O-220
175oC
BUZ11A
buz11a circuit
datecode G1
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BUZ11
Abstract: stmicroelectronics datecode BUZ11a buz11a circuit datecode G1
Text: BUZ11A N - CHANNEL 50V - 0.045Ω - 26A -TO-220 STripFET POWER MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ11A
-TO-220
175oC
O-220
BUZ11
stmicroelectronics datecode
BUZ11a
buz11a circuit
datecode G1
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PDF
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lm 7085
Abstract: lm 7085 circuit diagram AP-316 AR 5414 intel 28F256 intel 28F256 flash epl* Thermal printer 2147H SRAM 80C186 programming 5C032
Text: AP-316 APPLICATION NOTE Using Flash Memory for In-System Reprogrammable Nonvolatile Storage SAUL ZALES DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION January 1996 Order Number 292046-004 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in
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AP-316
LA19d
LA18d
LA17d
LA16d
lm 7085
lm 7085 circuit diagram
AP-316
AR 5414
intel 28F256
intel 28F256 flash
epl* Thermal printer
2147H SRAM
80C186 programming
5C032
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PDF
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bu2527af
Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
Text: Pøehled diskrétních polovodièových souèástek TESLA a dalích dováených typù z nìkdejí RVHP TRANZISTORY TYRISTORY TRIAKY DIAKY DIODY LED DISPLEJE OPTOÈLENY a dalí prvky
spolu s náhradami
a nejpouívanìjí standardní
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roku1984/85,
VQB200
VQB201
VQC10
VQE11
VQE12
VQE13
VQE14
VQE21
VQE22
bu2527af
wk16412
WK16413
WK16414
Tesla katalog
VQE24
4DR823B
kr206
5DR801B
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PDF
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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PDF
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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PDF
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
IRF722P
IRF732P
SGSP3055
IRF730P
1rfp450
IRF510
SGSP312
IRF540FI
irf522p
MTP20N10
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PDF
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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c5353
Abstract: Z11A
Text: SGS-THOMSON IDOS BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY
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BUZ11A
BUZ11A
O-220
C23A90
C53530
c5353
Z11A
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BUZ11A
Abstract: No abstract text available
Text: fZ 7 SCS-THOMSON BUZ11A [ * 03 & E g ï i » [ * S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS(on BUZ11A 50 V 0.06 ß Id 25 A HIGH CURRENT ULTRA FAST SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE INDUSTRIAL APPLICATIONS:
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BUZ11A
BUZ11A
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PDF
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BUZ11A
Abstract: No abstract text available
Text: *57 SGS-THOMSON TYPE BUZ11A IH iO lM iQ O I B U Z 11 A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss R DS on Id 50 V < 0.055 a 27 A • TYPICAL R Ds(on) = 0.048 Q AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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BUZ11A
BUZ11A
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BUZ11A
Abstract: No abstract text available
Text: / T T S G S -T H O M S O N * 7 /, « œ i L I ï ï [ M ] 0 S§ B U Z11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS R DS(on BUZ11A 50 V 0.06 fi 25 A HIGH CURRENT ULTRA FAST SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE
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BUZ11A
00A///S
BUZ11A
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PDF
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BUZ11A
Abstract: BUZ11
Text: H BUZ11A SiSconix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) <«) (A) 50 0.060 25 1 GATE 2 DRAIN (Connected to TAB) 3 SO URCE , 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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BUZ11A
-220A
10peration
BUZ11A
BUZ11
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BUZ11 motorola
Abstract: BUZ11 buz11a
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BUZ11 BUZ11A P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S These TM O S III Pow er FETs are designed fo r lo w voltage, high speed, lo w loss p o w e r s w itc h in g a pp licatio n s such as
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BUZ11
BUZ11A
BUZ11 motorola
buz11a
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K 3911
Abstract: transistor k 3911 transistor 86 y 87 BUZ11A T0220AB PAD35
Text: PowerMOS transistor_ N AMER PHILIPS/DISCRETE GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding, DC/DC and DC/AC converters,
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BUZ11A
001431S
T-39-11
T0220AB;
7Z21186
K 3911
transistor k 3911
transistor 86 y 87
BUZ11A
T0220AB
PAD35
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Untitled
Abstract: No abstract text available
Text: PowerMOS transistor_ _ N AflER PHILIPS/DISCRETE DhE D B U Z 11A _ t.tsa'm D o m m s • T-39-11 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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T-39-11
BUZ11A
bbS3131
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Intel AP-401
Abstract: AP-316 29204* intel lm2391
Text: m u APPLICATION NOTE AP-316 October 1990 Using Flash Memory for In-System Reprogrammable Nonvolatile Storage SAUL ZALES DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION Order Number: 292046-003 6-203 6 USING FLASH MEMORY FOR IN-SYSTEM REPROGRAMMABLE
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AP-316
LA19d,
LA18d,
LA17d,
LA19d
LA18d
LA17d
LA16d
Intel AP-401
AP-316
29204* intel
lm2391
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PDF
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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DK101/D.
0020-frJ
1RFZ40
1RF150
MTP25N10E
mth7n50 Transistor
MTP35N06E
BUZ80a equivalent
buz90 equivalent
MTP40N06M
MFE9200
MTH7N50
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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DK101/D.
O-22QI
0020-H
MFE9200
BUZ84A
BUZ90 equivalent
IRF150 MOSFET AMP circuit
BUZ35S
MTP40N06M
IRFZ22 mosfet
1RF620
MTM12N10L
MTP25N10E
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SGS M114S
Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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