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    BUZ35 Search Results

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    BUZ35 Price and Stock

    Siemens BUZ355

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics BUZ355 63
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    Quest Components BUZ355 265
    • 1 $14.31
    • 10 $14.31
    • 100 $5.724
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    STMicroelectronics BUZ353

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    Bristol Electronics BUZ353 20
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    Quest Components BUZ353 16
    • 1 $22.5
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    ComSIT USA BUZ353 342
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    . BUZ353

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    Bristol Electronics BUZ353 13
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    Motorola Semiconductor Products BUZ355

    6 A, 800 V, 1.5 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-218
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUZ355 83
    • 1 $14.31
    • 10 $14.31
    • 100 $5.724
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    BUZ355 12
    • 1 $15
    • 10 $7.5
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    Njs BUZ355

    6 A, 800 V, 1.5 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-218
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BUZ355 2
    • 1 $14.31
    • 10 $10.494
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    Find more BUZ35 price and stock on Findchips.com

    BUZ35 Datasheets (73)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ35 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ35 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ35 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ35 Unknown FET Data Book Scan PDF
    BUZ35 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ35 Semelab MOS Power Transistor Scan PDF
    BUZ35 Siemens Power Transistors Scan PDF
    BUZ35 Siemens main ratings Scan PDF
    BUZ350 Infineon Technologies Power MOSFET, 200V, TO-220, RDSon=0.12 ?, 22A, NL Original PDF
    BUZ350 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ350 Siemens SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) Original PDF
    BUZ350 Siemens Original PDF
    BUZ350 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ350 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ350 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ350 Siemens Power Transistors Scan PDF
    BUZ351 Intersil 11.5A, 400V, 0.400 ?, N-Channel Power MOSFET Original PDF
    BUZ351 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ351 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUZ351 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF

    BUZ35 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ358 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		O-218AA BUZ358 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ357 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		O-218AA BUZ357 PDF

    MOSFET 400V

    Abstract: TB334 400v 5a mosfet 400V switching transistor 400v mosfet Diode 400V 5A n-Channel mosfet 400v power relay N-channel mosfet BUZ35 BUZ351
    Text: BUZ351 Semiconductor Data Sheet 11.5A, 400V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2266.1 Features • 11.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ35 field effect transistor designed for applications such as


    Original     		BUZ351 BUZ35 TA17434. TB334 O-218AC O220AB) MOSFET 400V TB334 400v 5a mosfet 400V switching transistor 400v mosfet Diode 400V 5A n-Channel mosfet 400v power relay N-channel mosfet BUZ351 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ356 CASE OUTLINE: TO-218AA HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		O-218AA BUZ356 PDF

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original     		RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    ci237

    Abstract: No abstract text available
    Text: 3QE D / T T • 7^2i:]2 37J 305 ^ 7 3cî T ■ X -2 V 1 3 S G S -T H O M S O N « ^ i L E g T O i O © ! _ B U Z 3 5 4 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D Sfon BUZ354 500 V 0.8 n Id 8A • • • • HIGH SPEED SWITCHING


    OCR Scan     		BUZ354 100KHz appliZ354 ci237 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE OLE D PowerMOS transistor • 0014550 7 BUZ358 r- -i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		BUZ358 T0218AA; T-39-13 T0014flSS PDF

    BUZ358

    Abstract: LDM80
    Text: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor bbSBTBl 0014050 7 BUZ358 r - 3 ^ - ls May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bb53131 BUZ358 r-31- T0218AA; T-39-13 800VC BUZ358 LDM80 PDF

    250w smps

    Abstract: BUZ353
    Text: /= 7 S G S -T H O M S O N ^7# MfgtHiimiltgTriMDfgS BUZ353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ353 500 V 0.6 fl 9.5 A • HIGH SPEED SW ITCHING • HIGH VO LTAG E - 500V FOR OFF-LINE SMPS • HIGH C URRENT - 9.5A FOR UP TO 250W


    OCR Scan     		BUZ353 100KHz 250w smps BUZ353 PDF

    z351

    Abstract: No abstract text available
    Text: BUZ351 23 HARRIS N-Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T O -2 1 8 A C T O P VIEW • 11.5A, 400V • r D S o n = ° - 4 n • S O A is Power-Dissipation Limited >S O U R C E DRAIN • Nanosecond Switching Speeds


    OCR Scan     		BUZ351 z351 PDF

    BUZ353

    Abstract: No abstract text available
    Text: Sn SGS-THOMSON BUZ353 ¡y N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE B U Z353 . . . V dss R DS on 500 V 0 .6 Q I Id 9 .5 A AVALANC H E RUG G EDN ESS TECHNO LO G Y 100% AV ALANC HE TESTED REPETITIVE AVALANC HE DATA AT 100°C APPLICATIO NS . HIGH CURRENT, HIGH SPEED SW ITCHING


    OCR Scan     		BUZ353 BL1Z353 BUZ353 PDF

    BUZ356

    Abstract: T0218AA BUZ-356
    Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ356 T0218AA; BUZ356 T-39-13 T0218AA BUZ-356 PDF

    BUZ356

    Abstract: No abstract text available
    Text: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		bbS3T31 BUZ356 T0218AA; 0D14flEb T-39-13 tbS3T31 bb53c BUZ356 PDF

    BUZ10A

    Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
    Text: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B


    OCR Scan     		D04b3 BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 T0220 BUZ10A BUZ10A IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 PDF

    Untitled

    Abstract: No abstract text available
    Text: l4 3 D 5 5 7 1 0DS3fin TT4 • HAS BUZ351 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 1 8 A C • 11.5 A, 400V T O P VIE W • rDS on) = 0 .4 fl • SOA is Power-Dissipation Limited SO URCE D R A IN


    OCR Scan     		BUZ351 BUZ351 00S3S22 PDF

    buz357

    Abstract: Transistor 5331 MC 140 transistor
    Text: N AMER PHILIPS/DISCRETE DfaE D » PowerMOS transistor bb53^31 0 DIM fiM3 BUZ357^_ ^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ357^ T0218AA; bbSBT31 BUZ357 T-39-13 buz357 Transistor 5331 MC 140 transistor PDF

    buz354

    Abstract: No abstract text available
    Text: F ^ J ^ 7# , S G S - T H O M S O N BUZ354 llD gl^ IlLI(gTrMD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on BUZ354 500 V 0.8 Ü 8 A • HIGH SPEED SW ITCHING • HIGH VO LTAG E - 500V FOR OFF-LINE SMPS • HIGH C U R R E N T -8 A FOR UP TO 200W SMPS


    OCR Scan     		BUZ354 100KHz buz354 PDF

    BUZ353

    Abstract: 250w smps
    Text: /= T SGS-THOMSON BUZ353 7 # RfflO »ilLIOT RDO i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on BUZ353 500 V 0.6 ß 9.5 A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS • HIGH CURRENT - 9.5A FOR UP TO 250W


    OCR Scan     		BUZ353 O-218 BUZ353 250w smps PDF

    SCHEMATIC 200w smps

    Abstract: buz354
    Text: ¿ = 7 S G S -T H O M S O N ^ T Z ^ Q W ilL tE m W Ö ! BUZ354 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V D SS BUZ354 500 V ^ D S o n 0.8 S2 'd 8A • • • • HIGH SPEED SWITCHING HIGH VOLTAGE - 500V FOR OFF-LINE SMPS HIGH CURRENT-8A FOR UP TO 200W SMPS


    OCR Scan     		BUZ354 10OKHz 00A//iS SCHEMATIC 200w smps buz354 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3DE r=J D • 7 ^ 2 3 7 JDG2T73S 1 ■ - ' P 3 c - l 3 SGS-THOMSON s 6 s' thomson ^ 7 # M M i d ü ( g ¥ ^ ! 0(g§ B U Z353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ353 Vqss 500 V ^DSton) 0.6 ß 9.5 A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS


    OCR Scan     		JDG2T73S BUZ353 100KHz O-218 PDF

    BUZ351

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE PowerMOS transistor = ObE D BUZ351 ^ ^ _ 3 • bki53ci31 0D147tt May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		BUZ351 T0218AA; T-39-13 BUZ351 PDF

    irf9110

    Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
    Text: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB


    OCR Scan     		1RF9Z32 O-220AB 1RF48 IRF034 BUZ171 O-220ftB irf120 to-204aa irf9110 SOT-123 IRF224 irf113 BUZ10 BUZ63 IRF9122 irfl33 PDF