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    fp50n05

    Abstract: 50n05
    Text: j h a r f r RFP50N05 RFG50N05 is May 1992 N -C hannel Enhancem ent-M ode Power Field-Effect Transistors (MegaFETs Features Package TO-220AB TOP VIEW • 50A, 50V • r DS(on) = 0 .0 2 2 fi DRAIN (FLANGE) • UIS SOA Rating Curve (Single Pulse) u • SOA is P o w e r-D issip atio n Lim ited


    OCR Scan     		PDF RFP50N05 RFG50N05 O-220AB O-247 RFG50N05 92CS-43040 BVD88 fp50n05 50n05

    max4440

    Abstract: No abstract text available
    Text: APT10086BVFR A dvanced w Tæ p o w e r Te c h n o l o g y iooov i3a 0.8600 POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT10086BVFR O-247 APT10086BVR 100V16 max4440

    SSF6N70A

    Abstract: No abstract text available
    Text: SSF6N70A Advanced Power MOSFET FEATURES BV0SS = 700 V ^DS on = 1.8 Q < Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA (Max.) @ VDS= 700V Low RDS(on) : 1-552 ft (Typ.)


    OCR Scan     		PDF SSF6N70A 003b333 003b33M D03b335 SSF6N70A