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    BWF CS 30 Search Results

    BWF CS 30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB. Visit Amphenol Communications Solutions
    DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness. Visit Amphenol Communications Solutions
    10056845-114LF Amphenol Communications Solutions Quickie Header, Wire to Board Connector, Double Row, 14 Positions, 2.54 mm (0.1 in.), Right Angle, Low Profile Header 0.76 um (30 u\\.) Gold Mating Plating. Visit Amphenol Communications Solutions
    20021612-00020T1LF Amphenol Communications Solutions 1.27mm (0.05in.) pitch, Header with eject latch, 20 contacts Visit Amphenol Communications Solutions
    10112690-G03-21ULF Amphenol Communications Solutions Minitek®, Board/Wire to Board Connectors, Unshrouded Headers - Surface Mount - Double row - 42 Positions - 2mm (0.079inch) - Horizontal Visit Amphenol Communications Solutions

    BWF CS 30 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K7N167245A

    Abstract: K7N167249A 326J
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb 1. Speed bin merge.


    Original     		256Kx72 K7N167245A 256Kx72-Bit K7N167249A K7N167245A. 11x19 K7N167245A 326J PDF

    tc-l 11w

    Abstract: K7N167245A K7N167249A
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb 1. Speed bin merge.


    Original     		256Kx72 K7N167245A 256Kx72-Bit K7N167249A K7N167245A. 11x19 tc-l 11w K7N167245A PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs 256Kx72 Synchronous Pipeline SRAM WEDPY256K72V-XBX Preliminary* FEATURES DESCRIPTION n Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS


    Original     		256Kx72 WEDPY256K72V-XBX WEDPY256K72V-XBX PDF

    CS22

    Abstract: dq35j fast sram 100mhz CS11 CS21 WEDPY256K72V-XBX DQ9-17
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM Preliminary* FEATURES DESCRIPTION ! Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K


    Original     		WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX CS22 dq35j fast sram 100mhz CS11 CS21 DQ9-17 PDF

    K7N327245M

    Abstract: K7N327249M
    Text: Preliminary 512Kx72 Pipelined NtRAMTM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25


    Original     		512Kx72 K7N327245M 512Kx72-Bit K7N327249M 11x19 K7N327245M PDF

    dq35j

    Abstract: CS11 CS21 CS22 WEDPY256K72V-XBX
    Text: White Electronic Designs WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM DESCRIPTION FEATURES The WEDPY256K72V-XBX employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs into a single


    Original     		WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX dq35j CS11 CS21 CS22 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. April. 21. 2001 Preliminary 0.1 1. Add JTAG Scan Order May. 10. 2001 Preliminary Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the


    Original     		K7N167245A 256Kx72-Bit 256Kx72 11x19 00x10 PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPZ512K72S-XBX 512K x 72 Synchronous Pipeline Burst ZBL SRAM *PRELIMINARY FEATURES DESCRIPTION ! Fast clock speed: 150, 133, and 100MHz The WEDC SyncBurst - SRAM employs high-speed, lowpower CMOS design that is fabricated using an advanced CMOS process. WEDC’s 32Mb SyncBurst SRAMs integrate


    Original     		WEDPZ512K72S-XBX 100MHz 1Mx72. PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167249A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. April. 21. 2001 Preliminary 0.1 1. Add JTAG Scan Order May. 10. 2001 Preliminary Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the


    Original     		K7N167249A 256Kx72-Bit 256Kx72 11x19 00x10 PDF

    K7N167249A

    Abstract: No abstract text available
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167249A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb April. 21. 2001 May. 10. 2001


    Original     		256Kx72 K7N167249A 256Kx72-Bit 11x19 00x10 00x18 K7N167249A PDF

    dq35j

    Abstract: CS11 CS21 CS22 WEDPY256K72V-XBX
    Text: White Electronic Designs WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM DESCRIPTION FEATURES The WEDPY256K72V-XBX employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs into a single


    Original     		WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX dq35j CS11 CS21 CS22 PDF

    cs113

    Abstract: WEDPZ512K72S-XBX CS10 CS11 CS20 CS21
    Text: White Electronic Designs WEDPZ512K72S-XBX PRELIMINARY* 512K x 72 SYNCHRONOUS PIPELINE BURST ZBL SRAM FEATURES Fast clock speed: 150, 133, and 100MHz Fast access times: 3.8ns, 4.2ns, and 5.0ns Fast OE# access times: 3.8ns, 4.2ns, and 5.0ns High performance 3-1-1-1 access rate


    Original     		WEDPZ512K72S-XBX 100MHz cs113 WEDPZ512K72S-XBX CS10 CS11 CS20 CS21 PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs


    Original     		WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX PDF

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs


    Original     		WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX PDF

    av339

    Abstract: Bf b9 IS61NVVP51236-200B IS61NVVP25672 IS61NVVP25672-200B IS61NVVP25672-250B IS61NVVP51236
    Text: IS61NVVP25672 IS61NVVP51236 ISSI 256K x 72 and 512K x 36, 18Mb PIPELINE 'NO WAIT' STATE BUS SRAM ADVANCE INFORMATION JULY 2002 FEATURES DESCRIPTION • 100 percent bus utilization The 16 Meg 'NVVP' product family feature high-speed, low-power synchronous static RAMs designed to provide


    Original     		IS61NVVP25672 IS61NVVP51236 256Kx72 IS61NVVP25672-250B IS61NVVP25672-250BI IS61NVVP25672-200B IS61NVVP25672-200BI av339 Bf b9 IS61NVVP51236-200B IS61NVVP25672 IS61NVVP25672-200B IS61NVVP25672-250B IS61NVVP51236 PDF

    Untitled

    Abstract: No abstract text available
    Text: W2Z512K72SJ White Electronic Designs 36Mb, 512K x 72 Synchronous Pipeline Burst NBL SRAM Advanced* FEATURES DESCRIPTION n n n n n n n The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 72Mb


    Original     		150MHz W2Z512K72SJ 209-bump W2Z512K72SJ35ES W2Z512K72SJ38ES W2Z512K72SJ28BC W2Z512K72SJ30BC W2Z512K72SJ35BC W2Z512K72SJ38BC W2Z512K72SJ30BI PDF

    W2Z1M72SJ

    Abstract: No abstract text available
    Text: W2Z1M72SJ 72Mb, 1Mx72 Synchronous Pipeline Burst NBL SRAM Preliminary* FEATURES DESCRIPTION n n n n n n n The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 72Mb SyncBurst SRAMs integrate two 1Mx36 SRAMs into a


    Original     		W2Z1M72SJ 1Mx72 1Mx36 W2Z1M72SJ35ES W2Z1M72SJ38ES W2Z1M72SJ28BC W2Z1M72SJ30BC W2Z1M72SJ35BC W2Z1M72SJ38BC W2Z1M72SJ PDF

    Untitled

    Abstract: No abstract text available
    Text: W2Z1M72SJ White Electronic Designs 72Mb, 1M x 72 Synchronous Pipeline Burst NBL SRAM Advanced* FEATURES DESCRIPTION n n n n n n n The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 72Mb


    Original     		150MHz W2Z1M72SJ 209-bump W2Z1M72SJ35ES W2Z1M72SJ38ES W2Z1M72SJ28BC W2Z1M72SJ30BC W2Z1M72SJ35BC W2Z1M72SJ38BC W2Z1M72SJ30BI PDF

    W2Z512K72SJ

    Abstract: No abstract text available
    Text: W2Z512K72SJ 36Mb, 512Kx72 Synchronous Pipeline Burst NBL SRAM Preliminary* FEATURES DESCRIPTION n Fast clock speed: 225, 200, 166 and 150MHz The WEDC SyncBurst - SRAM family employs highspeed, low-power CMOS designs that are fabricated using an advanced CMOS process. WEDC’s 72Mb


    Original     		W2Z512K72SJ 512Kx72 150MHz 512Kx36 W2Z512K72SJ35ES W2Z512K72SJ38ES W2Z512K72SJ28BC W2Z512K72SJ30BC W2Z512K72SJ35BC W2Z512K72SJ PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 0.1 1. Initial document. 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change. tOH min /tLZC(min) from 0.8 to 1.5 at -25


    Original     		K7N327245M 512Kx72-Bit 512Kx72 K7N327249M K7N327245M 11x19 00x10 PDF

    K7N167245A

    Abstract: K7N167249A
    Text: 256Kx72 Pipelined NtRAM TM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 0.1 0.2 0.3 1. Initial document. 1. Add JTAG Scan Order 1. Update DC characteristics icc,isb 1. Speed bin merge. From K7N167249A to K7N167245A.


    Original     		256Kx72 K7N167245A 256Kx72-Bit K7N167249A K7N167245A. 11x19 K7N167245A PDF

    NtRAM

    Abstract: K7N327245M K7N327249M
    Text: Preliminary 512Kx72 Pipelined NtRAM TM K7N327245M Document Title 512Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. May. 10. 2001 Advance 0.1 1. Speed bin merge. From K7N327249M to K7N327245M 2. AC parameter change.


    Original     		512Kx72 K7N327245M 512Kx72-Bit K7N327249M 11x19 NtRAM K7N327245M PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE U II^ C a n iM ni — 1 MT3LST3264 P , MT5LST6464(P) 32K, 64K x 64 SYNCHRONOUS SRAM MODULE 32K, 64K x 64 SRAM with TAG RAM 256KB/512KB, 3.3V, FLOW-THROUGH OR PIPELINED SYNCHRONOUS BURST, SECONDARY CACHE MODULES FEATURES PIN ASSIGNMENT (Front View)


    OCR Scan     		MT3LST3264 MT5LST6464 160-lead, 82430FX 256KB/512KB, 160-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: . TOSHIBA 11\ I I TC55V1325FF-8, TC55V1325FF -10, TC55V1325FF -12 TECHNICAL DATA SILICON G A TE CMOS TENTATIVE 32,768 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V1325FF is a 1,048,576 bit synchronous pipelined burst SRAM that is organized as 32,768


    OCR Scan     		TC55V1325FF-8, TC55V1325FF 32KX32 TC55V1325FFâ 002b117 TC55V1325FF-10. PDF