BY527
Abstract: MBG044
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY527 Controlled avalanche rectifier Product specification Supersedes data of April 1992 1996 Jun 11 Philips Semiconductors Product specification Controlled avalanche rectifier BY527 FEATURES DESCRIPTION
|
Original
|
M3D116
BY527
MAM047
BY527
MBG044
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY527 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications General purpose
|
Original
|
BY527
OD-57
MIL-STD-750,
BY527
D-74025
12-Aug-04
|
PDF
|
BY527
Abstract: No abstract text available
Text: BY527 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode \ Features • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications
|
Original
|
BY527
MIL-STD-750,
D-74025
07-Jan-03
BY527
|
PDF
|
BY527
Abstract: No abstract text available
Text: BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current capability Lead Pb -free component
|
Original
|
BY527
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
OD-57
18-Jul-08
BY527
|
PDF
|
BY527
Abstract: No abstract text available
Text: BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current capability Lead Pb -free component
|
Original
|
BY527
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
OD-57
08-Apr-05
BY527
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY527 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current capability • Material categorization:
|
Original
|
BY527
OD-57
MIL-STD-750,
BY52emarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY527 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current capability • Material categorization:
|
Original
|
BY527
OD-57
MIL-STD-750,
BY52electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current capability • Compliant to RoHS directive 2002/95/EC and in
|
Original
|
BY527
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BY527
OD-57
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current capability Lead Pb -free component
|
Original
|
BY527
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BY527
D-74025
14-Apr-05
|
PDF
|
MBG044
Abstract: bY527 MBG054 rectifier handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 BY527 Controlled avalanche rectifier Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Jun 11 Philips Semiconductors Product specification Controlled avalanche rectifier
|
Original
|
M3D116
BY527
MBG044
bY527
MBG054
rectifier handbook
|
PDF
|
BY527
Abstract: No abstract text available
Text: BY527 TELEFUNKEN Semiconductors Silicon Mesa Rectifier Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current capability Applications 94 9539 General purpose Absolute Maximum Ratings
|
Original
|
BY527
D-74025
BY527
|
PDF
|
BY527
Abstract: No abstract text available
Text: BY527 Silicon Mesa Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications General purpose 94 9539 Absolute Maximum Ratings Tj = 25_C
|
Original
|
BY527
D-74025
12-Dec-94
BY527
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current capability • Compliant to RoHS directive 2002/95/EC and in
|
Original
|
BY527
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BY527
OD-57
11-Mar-11
|
PDF
|
diode sod57
Abstract: No abstract text available
Text: BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current capability • Compliant to RoHS directive 2002/95/EC and in
|
Original
|
BY527
2002/95/EC
2002/96/EC
OD-57
MIL-STD-750,
BY527
OD-57
2011/65/EU
2002/95/EC.
diode sod57
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: BY527 Vishay Semiconductors Silicon Mesa Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications 94 9539 General purpose Absolute Maximum Ratings
|
Original
|
BY527
D-74025
27-Sep-00
|
PDF
|
data sheet BY527 diode
Abstract: BY527
Text: BY527 Vishay Telefunken Silicon Mesa Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications 94 9539 General purpose Absolute Maximum Ratings
|
Original
|
BY527
D-74025
24-Jun-98
data sheet BY527 diode
BY527
|
PDF
|
BY527
Abstract: No abstract text available
Text: BY527 Vishay Telefunken Silicon Mesa Rectifier Features D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current capability Applications 94 9539 General purpose Absolute Maximum Ratings
|
Original
|
BY527
D-74025
27-Sep-00
BY527
|
PDF
|
Untitled
Abstract: No abstract text available
Text: _ BY527 Vishay Telefunken ▼ Silicon Mesa Rectifier Features • C ontrolled avalanche characteristics • G lass passivated junction • H erm etically sealed package • Low reverse current • High surge current capability Applications G eneral purpose
|
OCR Scan
|
BY527
D-74025
24-Jun-98
|
PDF
|
K457
Abstract: mb0044 BY527 D104
Text: Product specification Philips Semiconductors Controlled avalanche rectifier FEA TU R ES BY527 DESCRIPTION J , . . . Rugged glass package, using a high temperature alloyed construction. . Glass passivated • High maximum operating temperature This package is hermetically sealed
|
OCR Scan
|
BY527
MAM047
711002b
K457
mb0044
BY527
D104
|
PDF
|
jtp 7n
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE bbS3T31 003bi4fl5 fl33 BY527 D IAPX CONTROLLED AVALANCHE RECTIFIER DIODE Double-diffused glass passivated rectifier diode in hermetically sealed axial-leaded glass envelope capable o f absorbing reverse transients, intended fo r rectifier applications in colour television circuits
|
OCR Scan
|
bbS3T31
003bi4fl5
BY527
7Z88032
jtp 7n
|
PDF
|
BY5271
Abstract: No abstract text available
Text: Tem ic BY527 S e m i c o n d u c t o r s Silicon Mesa Rectifier Features • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current capability Applications General purpose
|
OCR Scan
|
BY527
WMI63
12-Dec-94
BY5271
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Te m ic BY527 TELEFUN KEN Semiconductors Silicon Mesa Rectifier Features • C on trolled avalan ch e ch aracteristics • G lass p a ssiv a ted ju n ctio n • H erm etica lly se a led pack age • L o w reverse current • H igh surge current cap ab ility
|
OCR Scan
|
BY527
|
PDF
|
002B4
Abstract: bY527 BY527 diode
Text: I I N AMER PH IL IP S/ DI SC RE TE bTE T> m bbS3^31 005b4ä5 fl33 BY527 IAPX CONTROLLED AVALANCHE RECTIFIER DIODE D ouble-diffused glass passivated re c tifie r diode in h e rm e tica lly sealed axial-leaded glass envelope capable o f absorbing reverse transients, intended fo r re c tifie r ap p lica tio ns in c o lo u r television circ u its
|
OCR Scan
|
005b4Ã
BY527
OD-57.
2bMe12
7Z8803
002B4
bY527
BY527 diode
|
PDF
|
DIODES BYD
Abstract: BYD13M BYG50J diodes byw sod91
Text: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers GENERAL-PURPO SE AVALANCHE RECTIFIERS OVERVIEW leaded surface-mount VR SO D 91 SO D 81 SO D 5 7 SO D 57 SO D 6 4 SO D 8 7 S O D 106
|
OCR Scan
|
BYD11D
BYD11J
BYD11M
BYD13J
BYD13M
1N5059
1N5060
1N5061
1N5062
BYD17J
DIODES BYD
BYG50J
diodes byw
sod91
|
PDF
|
