Untitled
Abstract: No abstract text available
Text: SK75GD126T =' U BT VIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT QI:9 =W U BT VI <I =W U @TY VI <I¥; SEMITOP 4 IGBT Module .5'( @BYY Q SS J =' U ZY VI [Z J @OY J ] BY Q =W U @BT VI @Y a' =' U BT VI b@ J =' U ZY VI [S J @TY
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SK75GD126T
c9-00&
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BYS 045
Abstract: BYS 045 v 72 BYY 56 byy 24 byy 57 1200 D 400 2200 E VRRM VRSM VBR byy 48 2209 n DA 6/1400
Text: Low Power Diodes Kleine Leistungsdioden Rectitier diodes Type VRRM V IFSM A IFAVM A trr °C/W tvj max °C 6 - 150 IFSM A IFAVM tvj max °C 10 ms, tvj = tvj max D 6/ 1200.1600 100 Controlled avalanche diodes Type VRRM V VBR A A 10 ms, tA = 45°C tvj = tvj max
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MM3Z20VT1
Abstract: No abstract text available
Text: SOD-323 Sma ll ssigna igna l zzene ene r d diode iode s 0.016 0.40 0.057(1.45) 200 mW Po Power wer diss ipat ion 0.010(0.25) 0.045(1.15) 0.070(1.80) Idea l fo forr ssurfac urfac e m moun oun tted app applicat licat ion 0.063(1.60) Zene r b break reak dow n vvolta
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OD-323
OD-323
MM3Z39VT1
MM3Z43VT1
MM3Z47VT1
MM3Z51VT1
MM3Z56VT1
MM3Z62VT1
MM3Z68VT1
MM3Z75VT1
MM3Z20VT1
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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Untitled
Abstract: No abstract text available
Text: SGC0560S Surface Mount Schottky Rectifier Reverse Voltage 60V Forward Current 5A Features • • • • • • • • • Schottky barrier diodes Low forward voltage drop Low leakage current Moisture sensitivity: level 1, per J-STD-020 J STD 020 Solder dip 260 °C, 10 s
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SGC0560S
J-STD-020
03-Rev
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ELECTRONIC BALLAST D1S
Abstract: R15D3 marking code FA sot25
Text: AL8807 HIGH EFFICIENCY LOW EMI 30V 1A BUCK LED DRIVER Description Pin Assignments Top View NEW PRODUCT The AL8807 is a step-down DC/DC converter designed to drive LEDs with a constant current. The device can drive up to 8 LEDs, depending on the forward voltage of the LEDs, in
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AL8807
AL8807
DS35281
ELECTRONIC BALLAST D1S
R15D3
marking code FA sot25
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Untitled
Abstract: No abstract text available
Text: SK 50 DGDL 126 T CONVERTER, INVERTER, BRAKE =' T BR XIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter. For IGBT chopper maximum ratings, please refer to SK35DGDL126T PI:9 <I <I^; PG:9 =' T BR [¥Y] XI <I^;T B F <I%,+A .5 T @ +'
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SK35DGDL126T
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BYY 56
Abstract: BYY67 MQ-5 BYY57 JSG300
Text: Einpreßdioden Press-fit diodes Diodes press-fit Typ Type Vrrm Vrsm = If r m s m Ifsm V • BYY 5 7 « ■ BYŸ 57/58-E 75 150 300 ■ BYY 57/58 ■ BYY.5W08Æ 4QQ ‘ SfO 700 If a v m ^ c V TO Tt Rthjc Wj max 10 ms, 10 ms, >v| = 1v, tvj max t'.'i max t'.'i max
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OCR Scan
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57/58-E
13/E14
BYY 56
BYY67
MQ-5
BYY57
JSG300
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BYY58-100
Abstract: No abstract text available
Text: BYY 57 / BYY 58 Silicon rectifier diodes FEATURES • Forward current 35 A • Reverse voltage 75 V - 1500 V • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies • Rectifier bridges PIN CONNECTIONS
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BYY58
Ti70S7fl
BYY58-100
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Untitled
Abstract: No abstract text available
Text: BYY 53/BYY 54 Silicon rectifier diodes o“;-1«-;:; FEATURES • Forward current 25 A • Reverse voltage 75 V - 1500 V • hermetic press-fit package • Available in different modifications of the package F1-3-2-ÏÏ APPLICATIONS • Rectifying in car generators
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53/BYY
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BYY58
Abstract: No abstract text available
Text: Press-fit diodes Type V rrm V rsm If r m s m - 75 • BYY 57/58 ■ BYY 57/58-E 400 Type ,/i2dt W in / t c R th jc V TO rT 1», = tv, - 180 °el 1«! may sin, max Outline V rrm 10 ms, 10 ms, tv, , tvi ,„a , A A A2s A/°C V m fi ° c /w °c 150 300 55
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57/58-E
178-E
BYY58
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Untitled
Abstract: No abstract text available
Text: Silicon rectifier diodes BYY57/BYY 58 FEATURES • Forward current 35 A • Reverse voltage 75 V - 1500 V • hermetic press-fit package • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies
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BYY57/BYY
BYY57
BYY58
57/6e
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Untitled
Abstract: No abstract text available
Text: Einpreßdioden Press-fit diodes Diodes press-fit Typ V rrm Type V rs m = V r r m If r m s m A 75 #50 300 5 5 . ’ BYŸ 57/58-E BYY 57/58 400 ' f a id 700 ,f&,' ! 11 55 If r m s m V rrm Maßbild RthJC 10 ms, tv, = 1v, = 180 °el tvj max t'.'i max fwi max
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57/58-E
57/S8
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BYY 56
Abstract: BYV 200 BYV 30 45 BYW 200 DDD1355 BYV 100 5BFL
Text: EUPEC Epitaxial rectifier diodes Type Vrrm I favm tA = 25°C V A blE » • 34032T7 D0CU352 5bfl « U P E C Ifsm VF Ir 10 ms, tvj max ¡f = Ifavm tvj = 25°C VR = VrrM tvj — tvj max A V trr tvj max mA ns °c Outline BYR 29-800 800 8 60 < 1,75 < 0 ,2 <75
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34032T7
DDD1355
57/58-E
BYY 56
BYV 200
BYV 30 45
BYW 200
BYV 100
5BFL
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BYW 200
Abstract: BYY 56 BYV 200 byw 150 MQ-5 byv 25-1 BYV 30 45 0 280 142 300 BYV 35 BYV 43 45
Text: Type Vrrm I favm tA = 25°C V A 34032T7 D0D135E Sbû b lE » eupec Epitaxial rectifier diodes Ifsm vF Ir 10 ms, tv j max ¡F = • f a v m = 25 °C VR = Vrrm tvj — tVj max A V mA BYR 29-800 800 8 60 BYT 79-500 500 14 BYV 29-400 400 trr tvj max ns °c IUPEC
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34032t7
d0d135e
57/58-E
BYW 200
BYY 56
BYV 200
byw 150
MQ-5
byv 25-1
BYV 30 45
0 280 142 300
BYV 35
BYV 43 45
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Untitled
Abstract: No abstract text available
Text: Low Power Diodes Rectifier diodes Ifsm I favm trr outline V A 10 m s, tvj ~ tvj max A °C/W Io D 6/ j ° Type 1200.1600 100 6 - 150 151 I fa v m V rrm Cathnrift 151 Controlled avalanche diodes Type V rrm V DA 3 / DA 6 / V br Ifs m A A 10 ms, tA = 45°C tvj = tvj max
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57/58-E
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BYY 56
Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
Text: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C
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--i-76-
-28minâ
57/58-E
BYY 56
byy 57 1200
OA61
BYY57
BYS 98-50
byy57e
BYy5758
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BYY 56
Abstract: BYV 35 byv 65 BYV 200
Text: ~V-03-0\ Epitaxial rectifier diodes Type V rrm Ifavm V 10 A 800 • 3M03217 DPDD151 i s t VF I fs m = 2 5 °C tA BYR 29-800 11E D eupec ms, ¡f Ir = I favm = 25 °C Outline = V rrm = t Vj max VR t v, A V mA ns < 1 ,7 5 < 0 ,2 < 60 UPEC Ivj max trr tv| max
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03-Oj
BYY 56
BYV 35
byv 65
BYV 200
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BYV 35 C
Abstract: BYV 200 BYW 200 BYW 56 V diodes byw 86 bvy 121 byv 65 BYY 56 diodes byw 29150
Text: 'T - 0 3 - O I . Epitaxial rectifier diodes Type :‘»IE d eupec Vrrm V • 34D32ci7 0DDD15T 4?b ■ Ifavm Ifsm VF tA= 25°C 10 ms, tv, max tv| = 25 °C VR = Vrrm tvj = tVjmax A V < 1 ,7 5 A ¡f = I f a v m Ir upec trr Wj max mA ns °c < 0 ,2
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sy 170
Abstract: SY 356 SY 360 05 sy 710 sy 360 Dioden SY 250 byx 21 SY 320 sy710 Halbleiterbauelemente DDR
Text: FUNKAMATEUR-Bauelementeinformation VD Vergleichsliste für Dioden DDR/international D D R - Vergleichs Typ typ GA 100 G A 101 G A 102 GA 104 G A 105 GAY 61 GAY 64 SA 412 SA 415 SA 418 SAY 12 SAY 16 o SAY 17 SAY 18 SAY 20 SAY 30 SAY 32 SAY 40 SAY 42 SY 170
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N4001.
sy 170
SY 356
SY 360 05
sy 710
sy 360
Dioden SY 250
byx 21
SY 320
sy710
Halbleiterbauelemente DDR
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D405N
Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
Text: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC
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G0D132T
t-10r
BYY57/
BYY58/
20x20
100x125
D24NR
41/mln.
D3507N
D405N
AEG T 51 N 1200
AEG D 251 N 1200
d629n
aeg tt 18 n 1200
BYY 56
aeg tt 46 n 1200
D 4409 N 200
AEG T 670 N 2200
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D668N
Abstract: D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668
Text: A E G - A K T I EN GE SEL LS CHAFT 17E D • QOBWS 1 ■ AEGG Leistungsdioden Power diodes Diodes de puissance Typ Type V rrm If r m s m V' A If s m /¡ 2dt t-10nn* «vp •vjnnax 45°C t-IOnn* M" 45°G •vjmax kA kA fl?S A*s If a v m / ì c If a v m V TO
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tA-45
BYY57/
BYY58/
20x20
100x125
D24NR
41/mln.
D668N
D798N400
d629n
D4409
Leistungsdiode
d452
BYY 56
D4409N
D668N2000
D668
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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F-92223
D-7800
ZPD 5.1 ITT
ZPD ITT
diode zener ZD 88
germanium
BYY32
germanium transistor
CJ 4148 ZENER
BAW21
ITT ZPD 11
itt germanium diode
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RTM 866 - 480
Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Text: Halbleiter bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964
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N914A
N914B
RTM 866 - 480
SAK 110
TAA775G
ITT TCA 700 Y
SAJ 220
SG 2368
ITT 90 38 TCA 700 Y
SAJ110
TCA 430
taa790
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