POLAR0.8
Abstract: Marking code mps RB400
Text: WILLAS FM120-M+ THRU MMBTH10LT1 VHF/UHF Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers reversethat leakage
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FM120-M+
MMBTH10LT1
FM1200-M+
OD-123+
OD-123H
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
POLAR0.8
Marking code mps
RB400
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LM 3041
Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.
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2N326
5961-0021-s)
LM 3041
2N325
2N326
TRANSISTOR C 2026
c 2026 y transistor
MC 340 transistor
c 3076
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Untitled
Abstract: No abstract text available
Text: MMBTA44 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE POWER 400 Volts 225 mWatts FEATURES • Silicon, planar design • Collector-emitter voltage VCE = 400V • Collector current I C = 300mA • MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026
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MMBTA44
300mA
OT-23,
MIL-STD-750,
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sot 89 D882
Abstract: h D882 transistor D882 TRANSISTOR D882 sot-89 sot-89 d882 d882 092 transistor D882 p
Text: WILLAS FM120-M+ D882 SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V THRU FM1200-M Pb Free Produc SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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OT-89
OD-123+
FM120-M+
FM1200-M
OD-123H
060TYP
118TYP
FM120-MH
FM130-MH
FM140-MH
sot 89 D882
h D882
transistor D882
TRANSISTOR D882 sot-89
sot-89 d882
d882 092
transistor D882 p
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M MMBT3904SLT1 THRU SOT-923 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produ SOD-123+ PACKAGE Package outline TRANSISTOR NPN Features FEATURES• Batch process design, excellent power dissipation offers
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FM120-M
MMBT3904SLT1
OT-923
FM1200-M
OD-123+
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
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smd Schottky diode sod-123 marking code 220
Abstract: transistor BC557 base collector emitter SOD-123H JC0-024 BC856 BC857 3E DIODE bc556 SMD TRANSISTOR SMD MARKING CODE 3G TRANSISTOR SMD MARKING CODE PK 14
Text: WILLAS Low VF Chip Schottky Barrier Diodes BC856A/BWT1 BC857A/B/CWT1 1.0A Surface Mount Schottky Barrier Rectifiers - 20V-40V General Purpose TransistorsPackage outline BC858A/B/CWT1 SL12-N THRU SL14-N Features • Batch process design, excellent power dissipation offers
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SL12-N
SL14-N
BC856A/BWT1
BC857A/B/CWT1
0V-40V
BC858A/B/CWT1
OD-323-L
FM120-MH
FM130-MH
FM140-MH
smd Schottky diode sod-123 marking code 220
transistor BC557 base collector emitter
SOD-123H
JC0-024
BC856
BC857 3E DIODE
bc556 SMD
TRANSISTOR SMD MARKING CODE 3G
TRANSISTOR SMD MARKING CODE PK 14
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Untitled
Abstract: No abstract text available
Text: 2SA1213 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR PNP SOT-89 FEATURES z z z z Small Flat Package Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time z Pb-Free package is available RoHS product for packing code suffix "G"
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2SA1213
OT-89
OT-89
060TYP
118TYP
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
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PCR 406 J transistor
Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim
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MIL-s-19500/341B
W0/341A
2N3315,
TX2N337S,
2N3553,
TX2N3553,
TX2N4440
2N3375
gik16wwlhma
lns81
PCR 406 J transistor
transistor PCR 406 HM data
smd transistor 44w
transistor PCR 406 HM
transistor pcr 406
transistor pcr 406 j
2N3375a
smd transistor marking 28W
s41b
2N3553
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Untitled
Abstract: No abstract text available
Text: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA 0.087(2.20) 0.070(1.80)
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MMBT3904W
OT-323
200mA
2002/95/EC
IEC61249
OT-323,
MIL-STD-750,
2010-REV
RB500V-40
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Untitled
Abstract: No abstract text available
Text: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR 32 Volts POWER 225mW SOT-23 Unit：inch mm • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • /
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2SC2411K
500mA
225mW
OT-23
OT-23
MIL-STD-750,
RB500V-40
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smd KJD
Abstract: PEF2026 marking kjd PEB2026 ITB07375 ITD07385 ITP07376 ITP07377 ITS07379 ITS07386
Text: Infineon technologies ICs for Communications ISDN High Voltage Power Controller IHPC PEB 2026 Version 1.1 Data Sheet 09.99 DS 2 This Material Copyrighted By Its Respective Manufacturer PEB 2026 Revision History: Current Version: 09.99 Previous Version: preliminary Data Sheet 02.96
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P-DSO-20-10
smd KJD
PEF2026
marking kjd
PEB2026
ITB07375
ITD07385
ITP07376
ITP07377
ITS07379
ITS07386
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transistor smd marking mx
Abstract: smd marking ARB TRANSISTOR SMD MARKING CODE ARB Siemens+TDA+2026
Text: SIEMENS PEB 2026 PEF 2026 Table of Contents Page 1 1.1 1.2 1.3 General D e s c rip tio n .3 F e a tu re s . 5
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P-DSO-20-10
transistor smd marking mx
smd marking ARB
TRANSISTOR SMD MARKING CODE ARB
Siemens+TDA+2026
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Y parameters of transistors
Abstract: SAMPLING PLAN
Text: Philips Semiconductors Product specification Microwave Transistors General BATCH RELEASE TESTS FOR GRADE “X” AND "Y” EQUIVALENTS Group B; note 1. INSPECTIONS MIL STD 750 METHOD CONDITIONS SAMPLING PLAN LTPD<2> SMALL LOT QUALITY CONFORMANCE INSPECTION
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Untitled
Abstract: No abstract text available
Text: ICs for Communications ISDN High Voltage Power Controller IHPC PEB 2026 Version 1.1 Data Sheet 09.99 DS 2 PEB 2026 Revision History: Current Version: 09.99 Previous Version: preliminary Data Sheet 02.96 Page in previous Version Page (in current Version)
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P-DSO-20-10
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PZTA93
Abstract: PZTA92 2B025 SMD IC 2025
Text: • □□ 2b 0 2 5 735 H A P X N AUER P H I L I P S / D I S C R E T E PZTA92 PZTA93 b?E D SILICON EPITAXIAL TRANSISTORS PNP transistors in a m icrom iniature SMD envelope SOT-223 . They are prim arily intended fo r use in telephony and professional communication equipment.
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2b025
PZTA92
PZTA93
OT-223)
PZTA92
PZTA93
SMD IC 2025
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2SA1238
Abstract: bc 147 B transistor transistor BC 147
Text: SA NY O S E M I C O N D U C T O R CORP 3SE D • 7 T T 7 0 7 b 0 G 0 Ô Û 2 7 7 Hi . tiifiîin'i :.j_w PNP Epitaxial Planar Silicon Transistor 2029A a! "T-Zf-li Differential Amp Applications D968C Applications . Differential amp, current mirror. Features
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D968C
T-91-20
SC-43
2SA1238
bc 147 B transistor
transistor BC 147
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Untitled
Abstract: No abstract text available
Text: AVANTEK INC MME D m UMlUb GOOflmS s IAVA UTO/UTC 2026 Series Thln-Film Cascadable Am plifier 10 to 2000 MHz AVANTBK FEATURES APPLICATIONS « Frequency Range: 10 to 2000 MHz • High Output Power: +19.0 dBm Typ • Medium Gain: 15.0 dB(Tÿp) • Temperature Compensated
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transistor k 208
Abstract: No abstract text available
Text: GENERAL PURPOSE INFORMATION 4. RELIABILITY TEST 4.1 A n E xam p le o f R e lia b ility Test fo r Signal Transistor Plastic M IN I M O L D Package E q u iv a le n t T e st M e th o d T e s t Ite m Test C o n d itio n J IS C 7021 M IL -S T D -2 0 2 M IL -S T D -7 5 0
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b1181
Abstract: 2SD823 FN 1016 transistor fn 1016 JIS B1181 DDD3710 IS-313D
Text: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" NPN 201 oa 00[]4,i3,i T ~ 33- K Epitaxial Planar Silico n Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage
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2SD823
7cH707Li
QDD4c13ci
B1181
B1252
2SD823
FN 1016
transistor fn 1016
JIS B1181
DDD3710
IS-313D
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yg 2025
Abstract: TRANSISTOR C 2026 marking agv F1K marking
Text: SANYO SEMICONDUCTOR CORP 32E D 7 T*=J7 D 7 ti D D D T E S H 4 T-29-25 N-Channel Junction Silicon FET 2026 Capacitor iVlicrophone Applications I3 9 3 A Features . Especially suited for use in audio, telephone capacitor microphones. . High lyfsj. . Excellent voltage characteristic.
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T-29-25
2SK377
SC-43
yg 2025
TRANSISTOR C 2026
marking agv
F1K marking
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sj 2038
Abstract: sj 2025 ic sj 2038 SJ 2036 ic tea 2025 TRANSISTOR FS 2025 sj 2028 tea 2037 2SC2021 TEA 2029 A
Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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27MHz,
770MHz,
50MHz,
sj 2038
sj 2025
ic sj 2038
SJ 2036
ic tea 2025
TRANSISTOR FS 2025
sj 2028
tea 2037
2SC2021
TEA 2029 A
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KL SN 102 94v-0
Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results
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2sd823
Abstract: case outline
Text: SA N Y O SEMICONDUCTOR CO RP 12E D J ^ 2SD823 7^T707b *" 201 oa NPN T 00[]4,i3,i ~ 3 3 - Epitaxial Planar Silicon Transistor B/W TV Horizontal Output Applications Absolute Maximum Ratings at Ta=25 °C Collector to Base Voltage Collector to Emitter Voltage
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T707b
2SD823
IS-20MA
IS-313
IS-313A
2sd823
case outline
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2SC693
Abstract: sj 2025 sj 2038 2SC1570 2sc693 sanyo ic sj 2038 JIS G3141 of HT 12E AT 2005A
Text: S AN Y O SEMICONDUCTOR CORP 12E D I T V W 07t. O O O m tO 2SC693 T'li-is' NPN Pianar Silicon Transistor 2003A ; ' " * * •> t - Low Frequency, Low IMoise Am p Applications . 2S7E Absolute M a x i i » Eatings at Ta=25°C Colleotor to Base Voltage CBO Collector to Emitter Voltage 7CE0
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2SC693
D414D
0DGB752
2SC693
sj 2025
sj 2038
2SC1570
2sc693 sanyo
ic sj 2038
JIS G3141
of HT 12E
AT 2005A
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