Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ISSUE 2 JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA
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ZTX948
100ms
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ZTX948
Abstract: DSA003779
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V*
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ZTX948
-10mA,
-100mA,
50MHz
-400mA
400mA,
100ms
ZTX948
DSA003779
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MS 600 35
Abstract: ECG3300 ECG3320 ECG3322 ECG3303 IGBT 200 A ECG3311 TR IGBT tr06 ECG3301
Text: Insulated Gate Bipolar Transistors IGBT ECG Type Description Collector DC to Emitter Collector Voltage Current Iq V CES A mps E C G 3 3 00 IGBT, N-Ch A Enhancement 400 10 Gate to Emitter Cutoff Voltage v GE(th) Gate to Emitter Voltage V G ES ±25 Collector to
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ECG3300
O-220J
T41-1
ECG3301
ECG3302
ECG3303
ECG3320
T48-2
ECG3321
ECG3322
MS 600 35
IGBT 200 A
ECG3311
TR IGBT
tr06
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transistor a 92 a 331
Abstract: TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor
Text: IME D I 7^4142 G00?b?4 I NPN TRIPLE DIFFUSED KSD5015 SAMSUNG SEMICONDUCTCR PLANAR SILICON TRANSISTOR INC COLOR TV HORIZONTAL OUTPUT APPLICATIONS T -33-11 TO-3P(F High Collector-Base Voltage Vceo-ISOOV ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic
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KSD5015
CTO-92
0QG77fe
transistor a 92 a 331
TRANSISTOR Q 667
transistor
samsung tv
transistor D 667
D F 331 TRANSISTOR
C 3311 transistor
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d 331 TRANSISTOR equivalent
Abstract: C 3311 transistor la 4142 74143
Text: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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7Tb4142
KSD5010
GQG77fe
d 331 TRANSISTOR equivalent
C 3311 transistor
la 4142
74143
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npn, transistor, sc 107 b
Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.
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TIP31
TIP31A
T1P31B
TIP31C
TIP32
TIP32A
TIP32B
TIP32C
TIP31B
npn, transistor, sc 107 b
transistor TIP 31A
TIP 31a Transistor
TIP32 NPN Transistor
tip 31A
31076
TIP 133 transistor
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IGBT
Abstract: ECG3320 transistors IGBT igbt types ECG3321 TR-06
Text: In su lated G ate B ipolar Transistors IGBT ECG Type Description ECG 3300 IGBT, N-Ch, A Enhancem ent Collector DC to Emitter Collector Voltage Current Iq V CES A mps 400 10 Gate to Emitter Cutoff Voltage VGE(th) Gate to Emitter Voltage V GES ±25 Collector to
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ecg3300
O-220J
T41-1
ecg3301
ecg3302
ecg3303
T48-2
ecg3321
ecg3322
ecg3323
IGBT
ECG3320
transistors IGBT
igbt types
TR-06
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C 3311 transistor
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -JU N E 94 _ FEATURES * * * 4.5 Am ps continuous current Up to 20 Am ps peak current Very lo w saturation voltage * * Excellent gain up to 20 Am ps Very lo w leakage * * Exceptional gain linearity dow n to 10mA
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-100mA,
50MHz
-400mA
400mA,
ZTX948
C 3311 transistor
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tp3026
Abstract: transistor ft 960
Text: 12E D I b3fc,?2S4 MOTOROLA SC QOflflESÖ XSTRS/R 3 | F t 1 33-11 MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3026 Advance Inform ation The RF Line UHF P o w e r T ran sisto r 25 W — 960 M Hz UHF POWER TRANSISTOR The TP3026 is specifically designed fo r operation as the final stage in 960 M Hz mobile
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TP3026
TP3026
transistor ft 960
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K1461
Abstract: BD189 BD185 735M
Text: MOTOROLA sc 15E D I XSTRS/R F fc.3 fc.7 a 5 M 0 0 flM717 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 4.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 6.0 to 10 Watt audio am plifiers utilizing com
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Q0flM717
BD185
BD189
K1461
735M
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transistor 711
Abstract: DO 127 samsung tv
Text: IME D I 7 ^ 4 1 4 2 Q007b?7 b | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic
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Q007b
KSD5016
T-33-11
GQG77fe
transistor 711
DO 127
samsung tv
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BUT93
Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11
Text: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e
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r-23-il
0G2142b
T-33-11
BUT93
BY22B
T3311
C 3311 transistor
14A3
BFX34
BY228
AEG v 300
transistor sc3
T-33-11
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Untitled
Abstract: No abstract text available
Text: SOLI» STATE DEVICES INC 15E D |i3ttQll DD02071 S | T - 33-11 2N5002 AND 2N5004 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807
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DD02071
2N5002
2N5004
2N5003
2N5005
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Untitled
Abstract: No abstract text available
Text: ROHM CO LTD 4DE 7 ô 2 f l ci cn D OOOSTGT Ü • N 37 > v X $ /Transistors 2SD158Ò - 1 5 S 0 RHM 7 ^ 3 3 -/J NPN ' > • ; = ! > h 7 > v X $ ■flÜcJil} J & H ! i | lf if f l/ L o w Freq. P ow er Amp.
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2SD158Ã
2SD1580
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cs 2648
Abstract: MRF450A MRF450 mrf450 equivalent VK20020-4B VK200-20/4B Motorola XT VK200-20-4B vk200 TYPE WCB
Text: MOTOROLA SC XSTRS/R F 4bE D • b3b?2SM 0CH4b7D S ■MOTb T - 3 3 - MOTOROLA ■ I SEMICONDUCTOR I TECHNICAL DATA If MRF450 MRF450A The R F L in e SO W - 3 0 MHz R F POWER TRANSISTORS NPN SILICON fcF POWER TRANSISTORS NPN SILICON . . . designed for power amplifier applications in industrial, com
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174-j
cs 2648
MRF450A
MRF450
mrf450 equivalent
VK20020-4B
VK200-20/4B
Motorola XT
VK200-20-4B
vk200
TYPE WCB
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T1P50
Abstract: transistors t1p50
Text: PHILIPS INTERNATIONAL 45E D CI 711Qö2ti DQ31SMS h E3PHIN 11 TIP47; TIP48 J I TIP49; TIP50 r-33-// — SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in T 0-220 envelope for amplifier and switching applications.
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DQ31SMS
TIP47;
TIP48
TIP49;
TIP50
r-33-//
TIP47
O-220AB,
711062b
00312MÖ
T1P50
transistors t1p50
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 IS S U E 2 - J U N E 94. . . FEATURES * 4.5 A m p s continuous current * U p to 20 A m p s peak current
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ZTX948
0Q1Q354
001G35S
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acrian RF POWER TRANSISTOR
Abstract: VTV-075-2 F627-8Q1 VTV150 F627-8 VTV075 VTV-075 VTV-075-3 VTV-075-4 acrian inc
Text: GENERAL V I v - u / o 7.5 WATTS • 2$ VOLTS 175-225 MHz VHF - TV LINEAR DESCRIPTION The VTV-075 is a silicon NPN transistor designed for linear broadcast applications. It has been designed for high efficiency, 3high linearity, Class A operation in VHF Band III
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VTV-075
5-70pF
2-20pF
25-240pF
50//f
1000pF
F627-8Q1
acrian RF POWER TRANSISTOR
VTV-075-2
F627-8Q1
VTV150
F627-8
VTV075
VTV-075-3
VTV-075-4
acrian inc
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KSD569
Abstract: KSB601 KSB708 KSD560 KSD568 C 3311 transistor
Text: ^SAMSUNG S E M I C O N D U C T O R m e I NC d I oaoTboa NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 T ~ LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol
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KSD560
KSB601
-r-55
O-220
T-33-11
KSD569
KSB601
KSB708
KSD560
KSD568
C 3311 transistor
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TIP32 TI
Abstract: No abstract text available
Text: TIP32; A TIP32B; C J^ P H I L IP S INTERNATIONAL SbE D • 711DÛBb □GMBHTD T2T « P H I N T - 33-11 SILICON EPITAXIAL BASE POWER TRANSISTORS PNP transistors in a plastic T 0-22 0 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. NPN complements are TIP31 series.
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TIP32;
TIP32B;
TIP31
TIP32
O-220.
TIP32B:
T-33-19
7110fl2b
00434Tb
TIP32 TI
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Untitled
Abstract: No abstract text available
Text: ROHM CO LTD 7fl20ciclcl 0 0 0 b 0 3 4 1 H R H H 4GE D N 7 > y 7s $ / J ransistors 2SD2023 2SD2023 - 7=33-11 =.W &k% Tf\s—ï f à NPN '> U = l> h 7 > V ^ ^ 1g ;ilil£ti:ftiiliM /L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor
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7fl20c
2SD2023
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BD243
Abstract: B0243C bd243c BD243A BD243B BD244 BD244C
Text: N AMER PHILIPS/DISCRETE - S5E D • UhS3T31i 0011413 T ■ ' BD243; BD243A BD243B: BD243C I ^ J T-33-jj SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in general am plifier and switching applica
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BD243;
BD243A
BD243B:
BD243C
T-33-JJ
BD244;
BD244C.
BD243
T-33-n
7z883s5
B0243C
bd243c
BD243B
BD244
BD244C
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BD203
Abstract: BD201 BDx77 T-33-11 BD202 BD203 npn BD204 BDX78
Text: BD201 B D 203 BDX77 PHILIPS INTERNATIONAL SbE D m VllüöEb □D4S7TÖ 07b I PHIN r-33 SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. W ith th e ir PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t o f 15 to 25 W in to a 4 £2 or
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BD201
BD203
BDX77
711002b
r-33-il
BD202,
BD204
BDX78
BD201
BD203
BDx77
T-33-11
BD202
BD203 npn
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40411 transistor
Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66
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2N6465
2N6466
2N6468
2N6469
2N6470
2N6471
2N6472
2N6495
2N6496
2N6500
40411 transistor
transistor 40411
TO-59 Package
npn 40411
sdn6253
2N6571
SDN6251
2NXXXX
MJ480
jedec Package TO-39
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