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    C 3311 TRANSISTOR Search Results

    C 3311 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 3311 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ISSUE 2 – JUNE 94 FEATURES * 4.5 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent gain up to 20 Amps * Very low leakage * Exceptional gain linearity down to 10mA


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    PDF ZTX948 100ms

    ZTX948

    Abstract: DSA003779
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio hFE MIN. TYP. MAX. UNIT CONDITIONS. -860 -1000 mV IC=-5A, VCE=-1V*


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    PDF ZTX948 -10mA, -100mA, 50MHz -400mA 400mA, 100ms ZTX948 DSA003779

    MS 600 35

    Abstract: ECG3300 ECG3320 ECG3322 ECG3303 IGBT 200 A ECG3311 TR IGBT tr06 ECG3301
    Text: Insulated Gate Bipolar Transistors IGBT ECG Type Description Collector DC to Emitter Collector Voltage Current Iq V CES A mps E C G 3 3 00 IGBT, N-Ch A Enhancement 400 10 Gate to Emitter Cutoff Voltage v GE(th) Gate to Emitter Voltage V G ES ±25 Collector to


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    PDF ECG3300 O-220J T41-1 ECG3301 ECG3302 ECG3303 ECG3320 T48-2 ECG3321 ECG3322 MS 600 35 IGBT 200 A ECG3311 TR IGBT tr06

    transistor a 92 a 331

    Abstract: TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor
    Text: IME D I 7^4142 G00?b?4 I NPN TRIPLE DIFFUSED KSD5015 SAMSUNG SEMICONDUCTCR PLANAR SILICON TRANSISTOR INC COLOR TV HORIZONTAL OUTPUT APPLICATIONS T -33-11 TO-3P(F High Collector-Base Voltage Vceo-ISOOV ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic


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    PDF KSD5015 CTO-92 0QG77fe transistor a 92 a 331 TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor

    d 331 TRANSISTOR equivalent

    Abstract: C 3311 transistor la 4142 74143
    Text: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)


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    PDF 7Tb4142 KSD5010 GQG77fe d 331 TRANSISTOR equivalent C 3311 transistor la 4142 74143

    npn, transistor, sc 107 b

    Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
    Text: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.


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    PDF TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C TIP31B npn, transistor, sc 107 b transistor TIP 31A TIP 31a Transistor TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor

    IGBT

    Abstract: ECG3320 transistors IGBT igbt types ECG3321 TR-06
    Text: In su lated G ate B ipolar Transistors IGBT ECG Type Description ECG 3300 IGBT, N-Ch, A Enhancem ent Collector DC to Emitter Collector Voltage Current Iq V CES A mps 400 10 Gate to Emitter Cutoff Voltage VGE(th) Gate to Emitter Voltage V GES ±25 Collector to


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    PDF ecg3300 O-220J T41-1 ecg3301 ecg3302 ecg3303 T48-2 ecg3321 ecg3322 ecg3323 IGBT ECG3320 transistors IGBT igbt types TR-06

    C 3311 transistor

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ISSUE 2 -JU N E 94 _ FEATURES * * * 4.5 Am ps continuous current Up to 20 Am ps peak current Very lo w saturation voltage * * Excellent gain up to 20 Am ps Very lo w leakage * * Exceptional gain linearity dow n to 10mA


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    PDF -100mA, 50MHz -400mA 400mA, ZTX948 C 3311 transistor

    tp3026

    Abstract: transistor ft 960
    Text: 12E D I b3fc,?2S4 MOTOROLA SC QOflflESÖ XSTRS/R 3 | F t 1 33-11 MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3026 Advance Inform ation The RF Line UHF P o w e r T ran sisto r 25 W — 960 M Hz UHF POWER TRANSISTOR The TP3026 is specifically designed fo r operation as the final stage in 960 M Hz mobile


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    PDF TP3026 TP3026 transistor ft 960

    K1461

    Abstract: BD189 BD185 735M
    Text: MOTOROLA sc 15E D I XSTRS/R F fc.3 fc.7 a 5 M 0 0 flM717 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 4.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 6.0 to 10 Watt audio am plifiers utilizing com­


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    PDF Q0flM717 BD185 BD189 K1461 735M

    transistor 711

    Abstract: DO 127 samsung tv
    Text: IME D I 7 ^ 4 1 4 2 Q007b?7 b | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic


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    PDF Q007b KSD5016 T-33-11 GQG77fe transistor 711 DO 127 samsung tv

    BUT93

    Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11
    Text: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e


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    PDF r-23-il 0G2142b T-33-11 BUT93 BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11

    Untitled

    Abstract: No abstract text available
    Text: SOLI» STATE DEVICES INC 15E D |i3ttQll DD02071 S | T - 33-11 2N5002 AND 2N5004 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE X JEDEC TO—59 ALL TERMINALS ISOLATED FROM CASE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807


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    PDF DD02071 2N5002 2N5004 2N5003 2N5005

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO LTD 4DE 7 ô 2 f l ci cn D OOOSTGT Ü • N 37 > v X $ /Transistors 2SD158Ò - 1 5 S 0 RHM 7 ^ 3 3 -/J NPN ' > • ; = ! > h 7 > v X $ ■flÜcJil} J & H ! i | lf if f l/ L o w Freq. P ow er Amp.


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    PDF 2SD158Ã 2SD1580

    cs 2648

    Abstract: MRF450A MRF450 mrf450 equivalent VK20020-4B VK200-20/4B Motorola XT VK200-20-4B vk200 TYPE WCB
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b?2SM 0CH4b7D S ■MOTb T - 3 3 - MOTOROLA ■ I SEMICONDUCTOR I TECHNICAL DATA If MRF450 MRF450A The R F L in e SO W - 3 0 MHz R F POWER TRANSISTORS NPN SILICON fcF POWER TRANSISTORS NPN SILICON . . . designed for power amplifier applications in industrial, com­


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    PDF 174-j cs 2648 MRF450A MRF450 mrf450 equivalent VK20020-4B VK200-20/4B Motorola XT VK200-20-4B vk200 TYPE WCB

    T1P50

    Abstract: transistors t1p50
    Text: PHILIPS INTERNATIONAL 45E D CI 711Qö2ti DQ31SMS h E3PHIN 11 TIP47; TIP48 J I TIP49; TIP50 r-33-// — SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in T 0-220 envelope for amplifier and switching applications.


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    PDF DQ31SMS TIP47; TIP48 TIP49; TIP50 r-33-// TIP47 O-220AB, 711062b 00312MÖ T1P50 transistors t1p50

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX948 IS S U E 2 - J U N E 94. . . FEATURES * 4.5 A m p s continuous current * U p to 20 A m p s peak current


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    PDF ZTX948 0Q1Q354 001G35S

    acrian RF POWER TRANSISTOR

    Abstract: VTV-075-2 F627-8Q1 VTV150 F627-8 VTV075 VTV-075 VTV-075-3 VTV-075-4 acrian inc
    Text: GENERAL V I v - u / o 7.5 WATTS • 2$ VOLTS 175-225 MHz VHF - TV LINEAR DESCRIPTION The VTV-075 is a silicon NPN transistor designed for linear broadcast applications. It has been designed for high efficiency, 3high linearity, Class A operation in VHF Band III


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    PDF VTV-075 5-70pF 2-20pF 25-240pF 50//f 1000pF F627-8Q1 acrian RF POWER TRANSISTOR VTV-075-2 F627-8Q1 VTV150 F627-8 VTV075 VTV-075-3 VTV-075-4 acrian inc

    KSD569

    Abstract: KSB601 KSB708 KSD560 KSD568 C 3311 transistor
    Text: ^SAMSUNG S E M I C O N D U C T O R m e I NC d I oaoTboa NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 T ~ LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol


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    PDF KSD560 KSB601 -r-55 O-220 T-33-11 KSD569 KSB601 KSB708 KSD560 KSD568 C 3311 transistor

    TIP32 TI

    Abstract: No abstract text available
    Text: TIP32; A TIP32B; C J^ P H I L IP S INTERNATIONAL SbE D • 711DÛBb □GMBHTD T2T « P H I N T - 33-11 SILICON EPITAXIAL BASE POWER TRANSISTORS PNP transistors in a plastic T 0-22 0 envelope. They are intended for use in a wide range of power amplifiers and for switching applications. NPN complements are TIP31 series.


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    PDF TIP32; TIP32B; TIP31 TIP32 O-220. TIP32B: T-33-19 7110fl2b 00434Tb TIP32 TI

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO LTD 7fl20ciclcl 0 0 0 b 0 3 4 1 H R H H 4GE D N 7 > y 7s $ / J ransistors 2SD2023 2SD2023 - 7=33-11 =.W &k% Tf\s—ï f à NPN '> U = l> h 7 > V ^ ^ 1g ;ilil£ti:ftiiliM /L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor


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    PDF 7fl20c 2SD2023

    BD243

    Abstract: B0243C bd243c BD243A BD243B BD244 BD244C
    Text: N AMER PHILIPS/DISCRETE - S5E D • UhS3T31i 0011413 T ■ ' BD243; BD243A BD243B: BD243C I ^ J T-33-jj SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in general am plifier and switching applica­


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    PDF BD243; BD243A BD243B: BD243C T-33-JJ BD244; BD244C. BD243 T-33-n 7z883s5 B0243C bd243c BD243B BD244 BD244C

    BD203

    Abstract: BD201 BDx77 T-33-11 BD202 BD203 npn BD204 BDX78
    Text: BD201 B D 203 BDX77 PHILIPS INTERNATIONAL SbE D m VllüöEb □D4S7TÖ 07b I PHIN r-33 SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. W ith th e ir PNP complements BD202, BD204 and BDX78 they are prim arily intended fo r use in hi-fi equipment delivering an o u tp u t o f 15 to 25 W in to a 4 £2 or


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    PDF BD201 BD203 BDX77 711002b r-33-il BD202, BD204 BDX78 BD201 BD203 BDx77 T-33-11 BD202 BD203 npn

    40411 transistor

    Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
    Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66


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    PDF 2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39