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    C 945 TRANSISTOR EQUIVALENT Search Results

    C 945 TRANSISTOR EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    C 945 TRANSISTOR EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD419203 TECHNICAL DATA DATA SHEET 945, REV. A Formerly part number SHD4193 PNP BI-POLAR POWER TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N3741 • Surface Mount Package Absolute Maximum Ratings* Symbol


    Original     		PDF SHD4193 SHD419203 2N3741

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original     		PDF SG384/D HP RF TRANSISTOR GUIDE MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original     		PDF PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier

    Untitled

    Abstract: No abstract text available
    Text: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945


    Original     		PDF LET9060C 2002/95/EC LET9060C

    Untitled

    Abstract: No abstract text available
    Text: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 60 W with 18 dB gain @ 945 MHz ■ POUT (@ 36 V)= 90 W with 18 dB gain @ 945


    Original     		PDF LET9060F 2002/95/EC LET9060F

    Untitled

    Abstract: No abstract text available
    Text: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		PDF LET9060C 2002/95/EC LET9060C

    Untitled

    Abstract: No abstract text available
    Text: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		PDF LET9060F 2002/95/EC LET9060F

    2L TRANSISTOR

    Abstract: LET9060F 945 TRANSISTOR M250
    Text: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		PDF LET9060F 2002/95/EC LET9060F 2L TRANSISTOR 945 TRANSISTOR M250

    2L TRANSISTOR

    Abstract: 945 TRANSISTOR transistor d 945 16824 transistor 945 LET9060C M243
    Text: LET9060C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european


    Original     		PDF LET9060C 2002/95/EC LET9060C 2L TRANSISTOR 945 TRANSISTOR transistor d 945 16824 transistor 945 M243

    PD85035C

    Abstract: 945 TRANSISTOR M243
    Text: PD85035C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PDF PD85035C 2002/95/EC PD85035C ID14138 945 TRANSISTOR M243

    945 TRANSISTOR

    Abstract: JESD97 M243 PD85025C
    Text: PD85025C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 16 dB gain @ 945 MHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PDF PD85025C 2002/95/EC PD85025C PD850and 945 TRANSISTOR JESD97 M243

    945 TRANSISTOR

    Abstract: JESD97 M243 PD85035C transistor marked 12w
    Text: PD85035C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european


    Original     		PDF PD85035C 2002/95/EC PD85035C 945 TRANSISTOR JESD97 M243 transistor marked 12w

    Untitled

    Abstract: No abstract text available
    Text: LET9070FB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 70 W with 16 dB gain @ 945 MHz ■


    Original     		PDF LET9070FB 2002/95/EC LET9070FB

    GP413

    Abstract: 945 TRANSISTOR 700B AN1294
    Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package


    Original     		PDF STAP57030 PowerSO-10RF STAP57030 AM02217 GP413 945 TRANSISTOR 700B AN1294

    2xi transistor

    Abstract: No abstract text available
    Text: LET9070CB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 70 W with 16 dB gain @ 945 MHz ■


    Original     		PDF LET9070CB 2002/95/EC LET9070CB 2xi transistor

    Untitled

    Abstract: No abstract text available
    Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description


    Original     		PDF PD57030-E PowerSO-10RF PowerSO-10RF.

    PD57030-E

    Abstract: 945 TRANSISTOR PD57030S AN1294 J-STD-020B PD57030S-E PD57030STR-E PD57030TR-E
    Text: PD57030-E PD57030S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package


    Original     		PDF PD57030-E PD57030S-E PowerSO-10RF PowerSO-10RF. PD57030-E 945 TRANSISTOR PD57030S AN1294 J-STD-020B PD57030S-E PD57030STR-E PD57030TR-E

    PD57030S

    Abstract: AN1294 JESD97 PD57030 PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
    Text: PD57030-E PD57030S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 14dB gain @ 945MHz / 28V ■ New RF plastic package


    Original     		PDF PD57030-E PD57030S-E 945MHz PowerSO-10RF PD57030 PowerSO-10RF. PD57030and PD57030S AN1294 JESD97 PD57030-E PD57030S-E PD57030STR-E PD57030TR-E

    AN1294

    Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
    Text: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description


    Original     		PDF PD57030-E PowerSO-10RF PowerSO-10RF. AN1294 J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E

    945 TRANSISTOR

    Abstract: 700B AN1294 GP413
    Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package


    Original     		PDF STAP57030 PowerSO-10RF STAP57030 945 TRANSISTOR 700B AN1294 GP413

    Untitled

    Abstract: No abstract text available
    Text: CD00002394 Rev 7.2 IN APPROVAL PAGE A ft RF power transistor the LdmoST family -D ra Technical Literature Alternate Identifier s Key process 7719 Product Development Dr ISO Definition aft CUSTOM ATTRIBUTES ft - Confidentiality Level Specification Public Technical Literature


    Original     		PDF CD00002394 SD57030,

    Untitled

    Abstract: No abstract text available
    Text: SD57030 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 13dB gain @ 945MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive


    Original     		PDF SD57030 945MHz 2002/95/EC SD57030

    945 TRANSISTOR

    Abstract: 700B M243 SD57030
    Text: SD57030 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 13dB gain @ 945MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive


    Original     		PDF SD57030 945MHz 2002/95/EC SD57030 945 TRANSISTOR 700B M243

    PD57045S

    Abstract: 700B AN1294 RF Transistor s-parameter
    Text: STAP57045 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 13 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF-STAP package


    Original     		PDF STAP57045 PowerSO-10RF-STAP STAP57045 PD57045S 700B AN1294 RF Transistor s-parameter