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    C BAND LINEAR POWER AMPLIFIER NO EXTERNAL MATCHING Search Results

    C BAND LINEAR POWER AMPLIFIER NO EXTERNAL MATCHING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    C BAND LINEAR POWER AMPLIFIER NO EXTERNAL MATCHING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RF5355

    Abstract: transistor c 5299 DATA
    Text: RF5355 3.3 V, 5 GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2 mm x 2.2 mm x 0.45 mm Features „ „ „ „ „ Single Supply Voltage 3.0 V to 5.0 V No external matching components 28 dB Typical Gain Across Band POUT = 17 dBm @ <4% TYP EVM across Operating Band


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    RF5355 IEEE802 11a/n RF5355 DS090501 transistor c 5299 DATA PDF

    RF5355

    Abstract: mini pci pcb layout rf power amplifier circuit diagram with pcb layout 285 100 16E
    Text: RF5355 3.3 V, 5 GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2 mm x 2.2 mm x 0.45 mm Features      Single Supply Voltage 3.0 V to 5.0 V No external matching components 28 dB Typical Gain Across Band POUT = 17 dBm @ <4% TYP EVM across Operating Band


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    RF5355 IEEE802 11a/n RF5355 DS101004 mini pci pcb layout rf power amplifier circuit diagram with pcb layout 285 100 16E PDF

    IPC-SM-782

    Abstract: RF5184 RF5184PCBA-410
    Text: RF5184 DUAL-BAND 800MHz/1900MHz W-CDMA POWER AMPLIFIER MODULE Typical Applications • 3V W-CDMA Cellular Handset Band 5 • 3V W-CDMA US-PCS Handset (Band 2) Product Description -A- 4.0 The RF5184 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third


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    RF5184 800MHz/1900MHz RF5184 824MHz 849MHz 1850MHz 1910MHz IPC-SM-782 RF5184PCBA-410 PDF

    800MHz CDMA Handset Circuit Diagram

    Abstract: ipc-SM-782 resistor 0603 RF5144PCBA-410 ERJ-3GEY0R00 IPC-SM-782 RF5144
    Text: RF5144 DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V CDMA/AMPS Cellular Handset • 3V CDMA US-PCS Handset • 3V CDMA2000/1XRTT Cellular Handset • 3V CDMA2000/1XRTT US-PCS Handset


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    RF5144 800MHz/1900MHz CDMA2000/1XRTT RF5144 IS-95/CDMA20001X/ 824MHz 849MHz 1850MHz 1910MHz 800MHz CDMA Handset Circuit Diagram ipc-SM-782 resistor 0603 RF5144PCBA-410 ERJ-3GEY0R00 IPC-SM-782 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF5184 RF5184MultiBand UMTS Power Amplifier Module MULTI-BAND UMTS POWER AMPLIFIER MODULE Features „ „ VMODE HB VCC BIAS VCC1 HB VCC2 HB VCC2 HB VCC2 HB Package Style: QFN, 24-Pin, 4mmx4mm 24 23 22 21 20 19 VREG - HB 1 18 NC Bias HB Input/Output Internally


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    RF5184 RF5184MultiBand 24-Pin, DS080219 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF5184 RF5184MultiBand UMTS Power Amplifier Module MULTI-BAND UMTS POWER AMPLIFIER MODULE Features „ „ VMODE HB VCC BIAS VCC1 HB VCC2 HB VCC2 HB VCC2 HB Package Style: QFN, 24-Pin, 4mmx4mm 24 23 22 21 20 19 VREG - HB 1 18 NC Bias HB Input/Output Internally


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    RF5184MultiBand RF5184 24-Pin, -41dBc -40dBc DS080327 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF5184 RF5184MultiBand UMTS Power Amplifier Module MULTI-BAND UMTS POWER AMPLIFIER MODULE Features „ „ VMODE HB VCC BIAS VCC1 HB VCC2 HB VCC2 HB VCC2 HB Package Style: QFN, 24-Pin, 4mmx4mm 24 23 22 21 20 19 VREG - HB 1 18 NC Bias HB Input/Output Internally


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    RF5184MultiBand RF5184 24-Pin, -41dBc -40dBc DS080613 PDF

    800MHz CDMA Handset Circuit Diagram

    Abstract: RF5144PCBA-410 IPC-SM-782 RF5144
    Text: RF5144 RF5144DualBand CDMA 800MHz/190 0MHz TriMode Power Amplifier Module DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE „ „ „ VCC1 PCS VCC2 PCS VCC2 PCS VCC2 PCS VREG - PCS 1 Input/Output Internally Matched@50Ω 18 NC Bias PCS 17 NC RF IN - PCS 2


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    RF5144 RF5144DualBand 800MHz/190 800MHz/1900MHz 24-Pin, 28dBm -51dBc 885kHz 2002/95/EC DS080807 800MHz CDMA Handset Circuit Diagram RF5144PCBA-410 IPC-SM-782 RF5144 PDF

    RF5184

    Abstract: IPC-SM-782 RF5184PCBA-410
    Text: RF5184 RF5184MultiBand UMTS Power Amplifier Module MULTI-BAND UMTS POWER AMPLIFIER MODULE Features „ „ VMODE HB VCC BIAS VCC1 HB VCC2 HB VCC2 HB VCC2 HB Package Style: QFN, 24-Pin, 4mmx4mm 24 23 22 21 20 19 VREG - HB 1 18 NC Bias HB Input/Output Internally


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    RF5184 RF5184MultiBand 24-Pin, 2002/95/EC DS080908 RF5184 IPC-SM-782 RF5184PCBA-410 PDF

    3g hsdpa signal Schematic Diagram

    Abstract: LQG15HN12NJ02D RF3165 RF3165PCBA-410 GRM1555C1HR50BZ01E
    Text: RF3165 RoHS Compliant & Pb-Free Product 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Typical Applications • 3V W-CDMA Band 3, 4, and 9 Handsets • Spread-Spectrum Systems • Multi-Mode W-CDMA 3G Handsets Product Description The RF3165 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third


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    RF3165 1750MHZ RF3165 1710MHz 1785MHz LQG15HN12NJ02D GRM1555C1HR50BZ01E 3g hsdpa signal Schematic Diagram LQG15HN12NJ02D RF3165PCBA-410 GRM1555C1HR50BZ01E PDF

    3g hsdpa signal Schematic Diagram

    Abstract: LQG15HN12NJ02D
    Text: RF3165 RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω „ 28dBm Linear Output Power „ 42% Peak Linear Efficiency „ 28dB Linear Gain „ -41dBc ACLR @ ±5MHz „ HSDPA Capable


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    RF31653V RF3165 1750MHZ 16-Pin, 28dBm -41dBc RF3165 sp02D DS080416 3g hsdpa signal Schematic Diagram LQG15HN12NJ02D PDF

    3g hsdpa signal Schematic Diagram

    Abstract: LQG15HN12NJ02D
    Text: RF3165 RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω „ 28dBm Linear Output Power „ 42% Peak Linear Efficiency „ 28dB Linear Gain „ -41dBc ACLR @ ±5MHz „ HSDPA Capable


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    RF31653V RF3165 1750MHZ 16-Pin, 28dBm -41dBc RF3165 DS061201 3g hsdpa signal Schematic Diagram LQG15HN12NJ02D PDF

    3g hsdpa signal Schematic Diagram

    Abstract: LQG15HN12NJ02D RF3165 RF3165PCBA-410
    Text: RF3165 RF31653V 1750MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE NOT FOR NEW DESIGNS 28dBm Linear Output Power  42% Peak Linear Efficiency  28dB Linear Gain  -41dBc ACLR @ ±5MHz  HSDPA Capable IM NC 10 VCC2


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    RF3165 RF31653V 1750MHz -41dBc 28dBm PbF3165 DS100517 3g hsdpa signal Schematic Diagram LQG15HN12NJ02D RF3165 RF3165PCBA-410 PDF

    GRM1555C1HR50B

    Abstract: LQG15HN12NJ02D rx193
    Text: DRAFT RF3165 DRAFT RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω „ 28dBm Linear Output Power „ 42% Peak Linear Efficiency „ 28dB Linear Gain „ -41dBc ACLR @ ±5MHz


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    RF31653V 1750MHZ RF3165 16-Pin, 28dBm -41dBc DS061201 GRM1555C1HR50B LQG15HN12NJ02D rx193 PDF

    1gg6

    Abstract: application tca 780 MA3531 agilent HMMC
    Text: Agilent HMMC-5033 17.7–32 GHz Amplifier 1GG6-8008 Data Sheet Features • • • • • 26 dBm output P –1 dB at 28 GHz High gain: 18 dB 50 Ω input/output matching Small size RF detector network Chip size: Chip size tolerance: Chip thickness: Pad dimensions:


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    HMMC-5033 1GG6-8008 HMMC-5040 HMMC-5618 5989-6210EN 1gg6 application tca 780 MA3531 agilent HMMC PDF

    RF3158PCBA-41X

    Abstract: 300khz filter EGSM900 RF3158 PCB Rogers RO4003 schematic diagram 555 PAM linear amplifier P1dB 36dBm "AGC Amplifier"
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE Package Style: Module 6mmx6mm HB RFIN 1 Features „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a Single PA Lineup


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    RF3158 GSM/EDGE/GSM850/EGSM900 GSM850/EGSM900/DCS/PC 2002/95/EC 2005/747/EC. DS100217 RF3158PCBA-41X 300khz filter EGSM900 RF3158 PCB Rogers RO4003 schematic diagram 555 PAM linear amplifier P1dB 36dBm "AGC Amplifier" PDF

    15S24

    Abstract: RF3158 EGSM900 RF3158PCBA-41X PCB Rogers RO4003 linear amplifier P1dB 36dBm
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm HB RFIN 1 „ „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a


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    RF3158 GSM/EDGE/GSM850/EGSM900 GSM850/EGSM900/DCS/ 2002/95/EC 2005/747/EC. DS070615 15S24 RF3158 EGSM900 RF3158PCBA-41X PCB Rogers RO4003 linear amplifier P1dB 36dBm PDF

    RF3158PCBA-41X

    Abstract: rf3158
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm HB RFIN 1 Features „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a


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    RF3158 GSM/EDGE/GSM850/EGSM900 GSM850/EGSM900/DCS/PC 2002/95/EC 2005/747/EC. DS071220 RF3158PCBA-41X rf3158 PDF

    LLV1005FB10NJ

    Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
    Text: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with


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    RMPA5251-251 RMPA5251-251 LLV1005FB10NJ RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 grm39 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module 6mmx6mm Features „ „ „ „ „ „ „ „ Linear EDGE and GSM Operation PowerStar GSM/GPRS Power Control Digital Band Select Enables a


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    RF3158 GSM/EDGE/GSM850/DCS/PCS GSM850/EGSM900/DCS/PC 2002/95/EC 2005/747/EC. DS061212 PDF

    Untitled

    Abstract: No abstract text available
    Text:  17.7-32 GHz Power Amplifier HMMC-5033 Features • 26 dBm Output P -1dB at 28 GHz • High Gain: 18 dB • 50 Ω Input/Output Matching Chip Size: Chip Size Tolerance: Chip Thickness: 2.74 x 1.31 mm (108 × 51.6 mils) ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils)


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    HMMC-5033 HMMC-5033 HMMC-5040 HMMC5618 HMMC-5618 HMMC-5033/rev PDF

    55Mbps

    Abstract: 11-Mbps DL4001 HFA3783 ISL3984 ISL3984IR ISL3984IR96 TB379 blm31p500 HFA3863
    Text: Data Sheet P RE L I M I NA R Y December 2000 File Number 4862.4 2.4GHz Power Amplifier and Detector Features The ISL3984 is a 2.4GHz monolithic SiGe Power Amplifier designed to operate in the ISM Band. It features two low voltage single supply stages. Cascaded, they deliver 18dBm Typ output power for the


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    ISL3984 18dBm -30dBc, -50dBc) 55Mbps 11-Mbps DL4001 HFA3783 ISL3984IR ISL3984IR96 TB379 blm31p500 HFA3863 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3158 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • Quad-Band GSM/EDGE Handsets • GSM850/EGSM900/DCS/PCS Products • GSM/EDGE Transmitter Line-ups • GPRS Class 12 Compatible Products


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    RF3158 GSM/EDGE/GSM850/DCS/PCS GSM850/EGSM900/DCS/PCS RF3158 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2364 RF23643 V PCS Low Noise Amplifier 3V PCS LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package Style: SOT 5-Lead GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS 3 Features Low Noise and High Intercept Point 18dB Gain „ Power Down Control „ Single 3.0V Power Supply


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    RF23643 RF2364 -CDMA/CDMA2000 RF2364 ampl00 DS080707 PDF