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    C05S Search Results

    C05S Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    54AC05/SDA-R Rochester Electronics LLC 54AC05 - Hex Inverter, With Open-Drain Outputs - Dual marked (5962R9059001SDA) Visit Rochester Electronics LLC Buy
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    C05S Price and Stock

    Sullins Connector Solutions PEC05SFAN

    CONN HEADER VERT 5POS 2.54MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PEC05SFAN Bulk 13,165 1
    • 1 $0.51
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    • 100 $0.51
    • 1000 $0.27715
    • 10000 $0.26504
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    Diodes Incorporated 74HC05S14-13

    IC INVERTER 6CH 1-INP 14SO
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    DigiKey 74HC05S14-13 Digi-Reel 2,500 1
    • 1 $0.57
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    74HC05S14-13 Cut Tape 2,500 1
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    TME 74HC05S14-13 5
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    Avnet Silica 74HC05S14-13 2,500 10 Weeks 2,500
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    Diodes Incorporated 74AHC05S14-13

    IC INVERTER 6CH 1-INP 14SO
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    DigiKey 74AHC05S14-13 Cut Tape 1,516 1
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    Avnet Americas 74AHC05S14-13 Reel 24 Weeks 2,500
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    Bristol Electronics 74AHC05S14-13 2,450
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    Anytek Technology Corporation Ltd AM2C05SCM4LD02400G

    RELAY GEN PURPOSE DPDT 5A 24V
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    DigiKey AM2C05SCM4LD02400G Box 999 1
    • 1 $5.14
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    Interstate Connecting Components AM2C05SCM4LD02400G
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    Anytek Technology Corporation Ltd AM4C05SCLA22000G

    RELAY GEN PURPOSE 4PDT 5A 220V
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    DigiKey AM4C05SCLA22000G Box 983 1
    • 1 $5.84
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    • 100 $4.4558
    • 1000 $3.89221
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    TME AM4C05SCLA22000G 1
    • 1 $5.95
    • 10 $5.58
    • 100 $4.84
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    Interstate Connecting Components AM4C05SCLA22000G
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    C05S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode in58

    Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
    Text: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors


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    unitB-FLK50/0 VIP-CAB-FLK50/0 VIP-CAB-FLK50/FR/OE/0 diode in58 OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908 PDF

    C02S

    Abstract: c28s
    Text: 8 7 4 5 6 1 2 3 REVISIONS PART NUMBER CODING P _ C _ _ S_ _N REV. ECO. NO DESCRIPTION DATE BY A 861 INITIAL RELEASE 12/14/2005 HT B 1143 ADD ALL TERMINATION TYPES 9/14/2006 MV F F TERMINATION TYPE TERMINATION TYPE NUMBER OF POSITIONS PER ROW HEAD DIMENSION


    Original
    C10640 Drawings\C10640, C02S c28s PDF

    ADI1364

    Abstract: No abstract text available
    Text: — d! MOTOROLA - % Order this data sheet by VNIOLM/D SEMICONDUCTOR TECHNICAL DATA a Advance v~loLM /formation Small-Signal L Field Effect . . . are designed for high voltage, high speed switching applications such as line drivers, relay drivers. CMOS logic, microprocessor or TTL-to-high voltage inlterface and


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    MK145BP, ADI1364 PDF

    C02S

    Abstract: c28s c14s C04S C33S
    Text: 8 7 4 5 6 1 2 3 P _ C _ _ S_ _N REVISIONS TERMINATION TYPE F NUMBER OF POSITIONS PER ROW TERMINATION CODE BA BB BC BD BE BF BG LEAD FREE GA GB GC GD D DA .140 3.56 B A .050 1.27 A B .140 3.56 HEAD DIMENSION .100 2.54 A .100 2.54 TYP. P _C _ _S _ _ N FITS RIGHT ANGLE BEND


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    C10907 Drawings\C10907, C02S c28s c14s C04S C33S PDF

    TRACTION MOTOR GE 763

    Abstract: TRACTION MOTOR GE 764 SA01-FE-3092-3 FLOW ELEMENT PDE2669TCUK 3EV290V20 VGd15 parker Bus Bar torque value table for metric bolts
    Text: aerospace climate control electromechanical filtration fluid & gas handling hydraulics pneumatics process control sealing & shielding Parker Pneumatic A complete range of pneumatic system components Catalogue PDE2600PNUK March 2014 PDE2600PNUK Parker Pneumatic


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    PDE2600PNUK application987 PDE2600PNUK TRACTION MOTOR GE 763 TRACTION MOTOR GE 764 SA01-FE-3092-3 FLOW ELEMENT PDE2669TCUK 3EV290V20 VGd15 parker Bus Bar torque value table for metric bolts PDF

    Untitled

    Abstract: No abstract text available
    Text: t InNET TECH N O LO G IES T0466S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (TD+)—(TD—) : (TX +)-C TX -) 1 : 1 ± 3% (RD +)—(RD—) : (RX+)—(RX—) 1 : 1 ± 3% INDUCTANCE: (TD+)—(TD—) 350uH MIN. O 0.1V, 100KHz,


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    10OKHz 100MHz 30MHz 60MHz 80MHz 100MHz --18dB PDF

    Untitled

    Abstract: No abstract text available
    Text: Æ iitron 3 3 0 1 E L E C T R O N IC S W A Y . TEL: 407 848-4311 PRODUCT DEVICES.INC. W E S T P A LM B E A C H , F L O R I D A 3 3 4 0 7 FAX: (407) 8 6 3 - 5 9 4 6 N-CHANNEL ENHANCEMENT MOS PET 100V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo 1 t . ( 1 )


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    300iiS, PDF

    PHP36

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,


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    PHP36N06E T0220AB PHP36 PDF

    ufnf320

    Abstract: No abstract text available
    Text: POWER MOSFET TRANSISTORS 400 Volt, 1.8 O hm FEATURES UFNF322 UFNF323 DESCRIPTION • Fast Switching • Low Drive Current The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.


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    UFNF322 UFNF323 Par40 UFNF320 UFNF321 PDF

    bu 517

    Abstract: NDS352P
    Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


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    NDS352P b50113D 003T74G bSD113D bSD113D 317H2 bu 517 NDS352P PDF

    MPT100

    Abstract: No abstract text available
    Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: t InNET TECHNOLOGIES T0468S Electrical REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (TXIN+)—(CTIN)—(TXIN—) : (TXO+)-(CTO)-CTXO-) 1.25CT : 1CT ± 3% (RXO+)—(RXO—) : (RXIN+)—(RXIN—) 1 : 1 ± 3% R X 1+<D_i^rH|if— INDUCTANCE:


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    30KHz 125MHz 10OKHz 10MHz 30MHz 60MHz 80MHz T0468S 350uH 100KHz, PDF

    BUK456

    Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
    Text: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    711062b D0b41Db BUK456-60A/B T0220AB BUK456 7110fi2b DDb411D BUK456-80A/B BUK456-60A BUK456-60B BUK456-80A PDF

    74AC05

    Abstract: 74AC05SC AC05 M14A
    Text: A I R C H I L D Revised D ecem ber 1999 S E M I C O N D U C T O R TM 74AC05 Hex Inverter with Open Drain Outputs General Description Features The A C 05 contains six inverters. • O utputs sink 24 mA ■ O pen drain fo r w ired NO R function ■ R adiation tolerant FACT process


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    74AC05 74AC05SC 14-Lead MS-012, 74AC05 AC05 M14A PDF

    vectron C0-257B27

    Abstract: vectron co-257 CO-257 CO-566 co257 vectron 257 C0-257f CO-08 C0-253B57 C0-257B57
    Text: TCXOs to 140 MHz Model CO-257 uses surface mount construction on a printed circuit board housed in a solder sealed FEATURES: • metal can. This model includes discrete thermistors Miniature Highperformance Series and resistors in the temperature compensation


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    CO-257 CO-557 CO-08. CO-511 1390ij0, vectron C0-257B27 vectron co-257 CO-566 co257 vectron 257 C0-257f CO-08 C0-253B57 C0-257B57 PDF

    Untitled

    Abstract: No abstract text available
    Text: HE D I 4Ö 554 5 2 ÛQQflSS2 1 | INTERNATIONAL Data Sheet No. PD-9.324N RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF820 IRFSS1 IRFS22 IRF823 N-CHANNEL 500 Volt, 3.0 Ohm HEXFET TO-220AB Plastic Package


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    IRF820 IRFS22 IRF823 O-220AB C-307 IRF820, IRF821, IRF822, IRF823 C-308 PDF

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs IRFY240 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S


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    IRFY240 PDF

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs iZiA Q T NSG2649 POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS 0 n • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING A BSO LU T E M A X IM U M R A T IN G S (T c = 25 C unless otherw ise noted) P A R A M E T E R S / T E ST C O N D IT IO N S


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    NSG2649 PDF

    BUK637-500B

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL fc.SE D B 7110fl2fc, DDfci43Dfci OMR • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode


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    711002b D0b43Db BUK637-500B BUK637-500B PDF

    Untitled

    Abstract: No abstract text available
    Text: CATALOG MI CRO SWI T CH 2EX1 S W IT C H -E N C L O S E D » !iV.- CK Of MlOHdHtllVHOKTWÎll HGULTOR CQWHT j j j j j j j L IS T IN G FEO. MF R. CODE 91929 MTS. HOLE FOR .280 DIA. FLAT HEAD SCREW.- 4 HOLE FOR *10 FLAT SCREW. 6.0 - ± .0 1 0 .2 6 5 -


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    PDF

    k554

    Abstract: kiv 499 BUK554-200A BUK554-200B
    Text: PHILIPS INTERNATIONAL bSE D m 7110fl2h D0b423b TTS « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


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    BUK554-200A/B -T0220AB ID/100 k554 kiv 499 BUK554-200A BUK554-200B PDF

    B4t diode surface mount

    Abstract: C05S 702 TRANSISTOR sot-23 S-108 NDS331N supersot-3
    Text: J u ly 1 9 9 6 N ational < ß Semiconductor" NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode po w e r fie ld effect tran sisto rs are produced using Nationals proprietary, high cell density, DMOS


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    NDS331N bS0113G B4t diode surface mount C05S 702 TRANSISTOR sot-23 S-108 NDS331N supersot-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 FOUR UNCOMMITTED POWER MOSFETS IN ISOLATED LOW PROFILE PLASTIC PACKAGE Four Uncommitted 100V To 1000V, Up To 30A N-Channel Power MOSFETs In One Package FEATURES • • • • • • Isolated High Density Package High Current


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    OM6223SP2 OM6224SP2 OM6225SP2 OM6226SP2 energ025 300/isec, PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC M O S FIELD EFFECT TRANSISTOR 2SJ199 P-CHANNEL MOS FET FOR SW ITCHING The 2SJ199, P-channel vertical ty p e MOS FE T, is a sw itching device w h ich can be driven d ire c tly by th e o u tp u t o f ICs having a 5 V pow er source. As the M OS F E T has lo w on-state resistance and excellen t s w itc h ­


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    2SJ199 2SJ199, K1485 WS60-00 PDF