wedge lamp 6WX
Abstract: led 6w LM85 fill 1260XLF marking code 6w
Text: LAMP DATA SHEET T-3¼ 10mm Wedge base lamp Description : 1260XLF 12V 6W Dimensional Characteristics : Glass components are lead-free Bead colour: Clear Filament construction: C-2R Gas fill : Xenon All dimensions in mm Marking CML xy 12V 6WX (where xy is a manufacturing date code)
|
Original
|
1260XLF
wedge lamp 6WX
led 6w
LM85
fill
1260XLF
marking code 6w
|
PDF
|
CMPT3646
Abstract: 30ma 40v npn c2R sot-23 MARKING CODE c2r sot 23 HIGH SPEED SWITCHING NPN SOT23 c2r marking code
Text: Central TM Semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high
|
Original
|
CMPT3646
OT-23
26-September
100MHz
300mA,
CMPT3646
30ma 40v npn
c2R sot-23
MARKING CODE c2r sot 23
HIGH SPEED SWITCHING NPN SOT23
c2r marking code
|
PDF
|
c2R sot-23
Abstract: CMPT3646 357 max MARKING CODE c2r sot 23
Text: CMPT3646 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching
|
Original
|
CMPT3646
CMPT3646
OT-23
100MHz
300mA,
c2R sot-23
357 max
MARKING CODE c2r sot 23
|
PDF
|
xenon 5W 12V
Abstract: xenon led 5w W5W 12V wedge lamp xenon application 501XLF e11 vch 21x 12v w5w
Text: Type Xenon Gas filled TEST VOLTS 13.5 Size T10 Min. 333 Rating 12V 5W Description T-3¼ 12V 5W Lead-free Wedge base lamp CURRENT mA Nom. Max. 370 407 LIGHT OUTPUT (Lm) Min. Nom. Max. 40 50 60 Part No. 501XLF LIFE Hours 3,000 NOTES: 1 2 3 4 Filament construction C-2R
|
Original
|
501XLF
xenon 5W 12V
xenon
led 5w
W5W 12V
wedge lamp
xenon application
501XLF
e11 vch 21x 12v w5w
|
PDF
|
G501
Abstract: No abstract text available
Text: PRODUCT DATA SHEET Type Incandescent Size G11 G-3½ Rating 6.5V 300mA Description 11mm Edison screw lamp Part No. G501-5 LIGHT OUTPUT (Lm) Min. Nom. Max. 10 12 14 LIFE Hours 4,000 Dimension in mm. TEST VOLTS 6.5 Min. 270 CURRENT (mA) Nom. Max. 300 330 NOTES:
|
Original
|
300mA
G501-5
E10/13,
G501
|
PDF
|
TDF024
Abstract: No abstract text available
Text: PRODUCT DATA SHEET Type Incandescent Size G11 G-3½ Rating 6.5V 1W Description 11mm Edison screw lamp Part No. G473-5 LIGHT OUTPUT (Lm) Min. Nom. Max. 4.8 6.0 7.2 LIFE Hours 3,000 Dimension in mm. TEST VOLTS 6.5 Min. 135 CURRENT (mA) Nom. Max. 150 165 NOTES:
|
Original
|
G473-5
E10/13,
TDF024
|
PDF
|
82417
Abstract: CC-2F 2.54 pin
Text: PRODUCT DATA SHEET Type Size Description Part No. Incandescent T3 T-1 T-1 Bi-Pin Lamp (2.54) (see table) Drawing not to scale All dimensions in mm PHOTOMETRY DATA Farnell Part No. 526927 526940 526939 SLI P/N 8-2401 8-2417 8-2402 Lamp Rating 5V 0.3W 12V 0.72W
|
Original
|
|
PDF
|
IEC 60061-1
Abstract: marking 12W Lamp 7387 C2F marking 112W 329228 2f marking 7374 farnell
Text: PRODUCT DATA SHEET Type Size Description Part No. Incandescent T6 T-1¾ T-1¾ Bi-Pin Lamp (see table) Drawing not to scale All dimensions in mm PHOTOMETRY DATA Farnell Part No. 329204 329216 329228 653603 653615 SLI P/N 7381 7382 7374 7387 7327 Lamp Rating
|
Original
|
7004-4-x.
IEC 60061-1
marking 12W
Lamp 7387
C2F marking
112W
329228
2f marking
7374
farnell
|
PDF
|
IEC 60061-1
Abstract: 60061-1 7004-94-x wedge lamp t1 60061.1 wedge lamp 1105l prisma
Text: PRODUCT DATA SHEET Type Incandescent Size T5 T-1½ Rating 6V 1W Description T5 Wedge base lamp Part No. 1105LF LCL 9.0 ± 2.0 Exhaust tip to clear in 3.05 dia. hole (1.5) Retention Groove (0.7) 5.5 Max. 14.5 Max 3.1 Max. 1.65 Min. 3.0 Min ø 5.0 Max 2.5 ~ 3.5
|
Original
|
1105LF
7004-94-x.
IEC 60061-1
60061-1
7004-94-x
wedge lamp t1
60061.1
wedge lamp
1105l
prisma
|
PDF
|
CMPT3646
Abstract: MARKING CODE c2r sot 23
Text: Central Semiconductor CMPT3646 TM Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, ultra high speed
|
Original
|
CMPT3646
CMPT3646
OT-23
100mA,
300mA,
100mA
300mA
100MHz
MARKING CODE c2r sot 23
|
PDF
|
CMPT3646
Abstract: MARKING CODE c2r sot 23
Text: Central TM Semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, ultra high speed
|
Original
|
CMPT3646
CMPT3646
OT-23
100mA,
300mA,
100mA
300mA
100MHz
MARKING CODE c2r sot 23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN74LVC1G10 SINGLE 3-INPUT POSITIVE-NAND GATE www.ti.com SCES486D – SEPTEMBER 2003 – REVISED JANUARY 2007 FEATURES • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V
|
Original
|
SN74LVC1G10
SCES486D
24-mA
000-V
A114-A)
A115-A)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN74LVC1G10 www.ti.com SCES486E – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-NAND Gate Check for Samples: SN74LVC1G10 FEATURES DESCRIPTION • The SN74LVC1G10 performs the Boolean function Y = A • B • C or Y = A + B + C in positive logic.
|
Original
|
SN74LVC1G10
SCES486E
SN74LVC1G10
24-mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN74LVC1G10 www.ti.com SCES486E – SEPTEMBER 2003 – REVISED DECEMBER 2013 Single 3-Input Positive-NAND Gate Check for Samples: SN74LVC1G10 FEATURES DESCRIPTION • The SN74LVC1G10 performs the Boolean function Y = A • B • C or Y = A + B + C in positive logic.
|
Original
|
SN74LVC1G10
SCES486E
SN74LVC1G10
24-mA
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC2002 (Tentative) Silicon NPN epitaxial planar type For general amplification • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit Collector-base voltage (Emitter open)
|
Original
|
2002/95/EC)
DSC2002
|
PDF
|
DSC4002
Abstract: MARKING CODE C2S ZJC00447AED
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC4002 (Tentative) Silicon NPN epitaxial planar type For general amplification • Packaging Radial type : 5000 pcs / carton Package Absolute Maximum Ratings Ta = 25°C Code NS-B1-B
|
Original
|
2002/95/EC)
DSC4002
DSC4002
MARKING CODE C2S
ZJC00447AED
|
PDF
|
marking 2F
Abstract: No abstract text available
Text: 14.45/15.87 0.46/0.56 LCL 12.70 05.84 MAX. 3.05/3.30 MEASURE APPROX. 1.6 BELOW BOTTOM OF LAMP BASE 06.35 MAX. 7.87/8.38 5.84/6.86 NOTES: 1. LESS AND SEAMLESS. JKL LAMP VOLTS AMPS NUMBER RATED ±10% 2 . BASE MATERIAL: NLYON 3. 4. 5. 6. 7. 8. OR EQUIVALENT.
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL P R O D U C T D A T A S H E E T SIZE TYPE INCANDESCENT DESCIÎIPTION RATING T15 T15WBL PART No. T-5 as table Drawing not to scale. WEDGEBAFE LAMP All dimensions in mm. PHOTOMETRIC DATA PART OPERATING NUMBER VOLTAGE (V) 908 6 - 7 NOMINAL CURRENT
|
OCR Scan
|
T15WBL
|
PDF
|
transistor marking LG
Abstract: g2 SOT-23 NPN MARKING CODE c2r sot 23 c2R sot-23 LG SOT23 marking code LG MARKING CODE 028 sot 23 c2r marking MARKING Lg SOT23 LG marking code
Text: Central semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high
|
OCR Scan
|
CMPT3646
OT-23
100MHz
300mA,
30niA
OT-23
26-September
transistor marking LG
g2 SOT-23 NPN
MARKING CODE c2r sot 23
c2R sot-23
LG SOT23
marking code LG
MARKING CODE 028 sot 23
c2r marking
MARKING Lg SOT23
LG marking code
|
PDF
|
MARKING CODE c2r sot 23
Abstract: No abstract text available
Text: Central" Semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching applications.
|
OCR Scan
|
CMPT3646
OT-23
100MHz
300mA
300mA,
OT-23
26-September
MARKING CODE c2r sot 23
|
PDF
|
5P J TRANSISTOR MARKING
Abstract: Transistor code iz MARKING CODE c2r sot 23
Text: Central Semiconductor Corp. CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3646 type is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, ultra high speed
|
OCR Scan
|
CMPT3646
OT-23
5P J TRANSISTOR MARKING
Transistor code iz
MARKING CODE c2r sot 23
|
PDF
|
CMPT3646
Abstract: MARKING CODE c2r sot 23
Text: Central S e m ic o n d u c to r CMPT3646 C orp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEM IC O N D U C TO R CMPT3646 type is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, ultra high speed
|
OCR Scan
|
CMPT3646
OT-23
100mA,
300mA,
100mA
300mA
100MHz
MARKING CODE c2r sot 23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Central" S em iconductor CMPT3646 Corp. NPN SILICON TRANSISTOR DESCRIPTION: The C E NTRAL S E M IC O N D U C TO R CMPT3646 type is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, ultra high speed
|
OCR Scan
|
CMPT3646
CMPT3646
OT-23
|
PDF
|
marking code LG
Abstract: MARKING CODE c2r sot 23
Text: TM C e n t r a l Sem i c o n d u c t o r C o r p . CMPT3646 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL S E M IC O N D U C T O R CMPT3646 type is an NPN Silicon Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
|
OCR Scan
|
CMPT3646
CMPT3646
OT-23
100mA
marking code LG
MARKING CODE c2r sot 23
|
PDF
|
