Darlington Transistors
Abstract: CMPTA13 CMPTA14 CMPTA63 CMPTA64 Marking codes marking code "R5" sot23
Text: CMPTA13 CMPTA63 CMPTA14 NPN CMPTA64 PNP SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS SOT-23 CASE MAXIMUM RATINGS: TA=25 °C Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation
|
Original
|
PDF
|
CMPTA13
CMPTA63
CMPTA14
CMPTA64
OT-23
CMPTA13
CMPTA63
CMPTA13:
CMPTA14:
CMPTA63:
Darlington Transistors
Marking codes
marking code "R5" sot23
|
Untitled
Abstract: No abstract text available
Text: CMPTA13 CMPTA63 CMPTA14 NPN CMPTA64 PNP w w w. c e n t r a l s e m i . c o m SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA13 and CMPTA63 series are complementary silicon darlington transistors manufactured by the epitaxial planar
|
Original
|
PDF
|
CMPTA13
CMPTA63
CMPTA14
CMPTA64
CMPTA13
CMPTA63
CMPTA13:
CMPTA14:
CMPTA63:
CMPTA64:
|
gp 752
Abstract: marking C2U
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC8151TB SILICON RFIC LOW CURRENT AMPLIFIER FOR CELLULAR/CORDLESS TELEPHONES FEATURES INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V +20 • LOW CURRENT CONSUMPTION: UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V
|
Original
|
PDF
|
UPC8151TB;
UPC8151TB
OT-363
UPC8151TB-E3-A
24-Hour
gp 752
marking C2U
|
MARKING c2p
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON MMIC UPC8128TB LOW CURRENT AMPLIFIERS FOR UPC8151TB CELLULAR/CORDLESS TELEPHONES UPC8152TB FEATURES • SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V UPC8151TB; ISOL = 38 dB TYP. @ f = 1 GHz UPC8152TB; ISOL = 40 dB TYP. @ f = 1 GHz • LOW CURRENT CONSUMPTION:
|
Original
|
PDF
|
UPC8128TB
UPC8151TB
UPC8152TB
UPC8128TB;
UPC8151TB;
UPC8152TB;
MARKING c2p
|
top marking c3
Abstract: No abstract text available
Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY ¥ LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40¡C TA = +25¡C
|
Original
|
PDF
|
UPC8178TB
POWE15
UPC8178TB-E3
24-Hour
top marking c3
|
DFT301-801
Abstract: DFT301 GRM40CH102J50PT GRM39CH100D50PT GRM39CH080D50PT PC8128TB GRM39CH050C50PT
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50
|
Original
|
PDF
|
PC8179TK
PC8179TK
PC8179TB
HS350
WS260
IR260
PU10059EJ02V0DS
DFT301-801
DFT301
GRM40CH102J50PT
GRM39CH100D50PT
GRM39CH080D50PT
PC8128TB
GRM39CH050C50PT
|
DFT301
Abstract: DFT301-801 grm40ch102j50pt PC8179TK-E2 7R102S50 GRM39CH100D50PT marking code 18 6pin GRM39CH080D50PT PC8178
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8179TK 3 V SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50
|
Original
|
PDF
|
PC8179TK
PC8179TK
PC8179TB
IR260
WS260
HS350
PU10059EJ02V0DS
DFT301
DFT301-801
grm40ch102j50pt
PC8179TK-E2
7R102S50
GRM39CH100D50PT
marking code 18 6pin
GRM39CH080D50PT
PC8178
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TB SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
|
Original
|
PDF
|
PC8178TB
PC8178TB
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
|
Original
|
PDF
|
PC8179TK
PC8179TK
PC8179TB
|
24C02H
Abstract: 24C08K 24C16K 24C04K C02h 24C01WI 24C08 6 c08k C04K 24C01W
Text: CAT24C01, CAT24C02, CAT24C04, CAT24C08, CAT24C16 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM http://onsemi.com SOIC−8 W SUFFIX CASE 751BD Description The CAT24C01/02/04/08/16 are 1−Kb, 2−Kb, 4−Kb, 8−Kb and 16−Kb respectively CMOS Serial EEPROM devices organized
|
Original
|
PDF
|
CAT24C01,
CAT24C02,
CAT24C04,
CAT24C08,
CAT24C16
16-Kb
751BD
TSOT-23
419AE
511AK
24C02H
24C08K
24C16K
24C04K
C02h
24C01WI
24C08 6
c08k
C04K
24C01W
|
marking 6b 6pin
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
|
Original
|
PDF
|
PC8178TK
PC8178TK
PC8178TB
marking 6b 6pin
|
24C02WI
Abstract: 24C16K 24C02H FOOTPRINT MO-229 2X3 SOLDERING c16K marking c5a 8 pins CAT24C08 24C02WE 24C08K 24c02w
Text: CAT24C01, CAT24C02, CAT24C04, CAT24C08, CAT24C16 1-Kb, 2-Kb, 4-Kb, 8-Kb and 16-Kb I2C CMOS Serial EEPROM http://onsemi.com SOIC−8 W SUFFIX CASE 751BD Description The CAT24C01/02/04/08/16 are 1−Kb, 2−Kb, 4−Kb, 8−Kb and 16−Kb respectively CMOS Serial EEPROM devices organized
|
Original
|
PDF
|
CAT24C01,
CAT24C02,
CAT24C04,
CAT24C08,
CAT24C16
16-Kb
751BD
TSOT-23
419AE
511AK
24C02WI
24C16K
24C02H
FOOTPRINT MO-229 2X3 SOLDERING
c16K
marking c5a 8 pins
CAT24C08
24C02WE
24C08K
24c02w
|
81117822
Abstract: No abstract text available
Text: November 1996 Revision 2.0 FUJITSU DATA SHEET - SD C2U V7282 A -(6 7/84/100/125) T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UV7282(A)-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized
|
OCR Scan
|
PDF
|
V7282
16MByte
SDC2UV7282
16-megabtye
168-pin,
1117822A-
16Mion
81117822
|
C2U SOT-89
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SH EET - EDC2UV641 1 /4 -(60/70)(J/T)G-S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description The EDC2UV641 (1/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module
|
OCR Scan
|
PDF
|
EDC2UV641
16MByte
16-megabyte
168-pins,
MB81V1
1Mx16
C2U SOT-89
|
|
|
XC 68 HC 58
Abstract: DQ37
Text: cP July 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6 4 1 2 -(6 7 /8 4 /1 0 0 /1 2 5 )T -S is a high pe rfo rm an ce, 16 m eg ab tye synch ron ous, dyn am ic RAM m odule organ ized as
|
OCR Scan
|
PDF
|
V6412-
16MByte
168-pin,
AMM-DS-2031
XC 68 HC 58
DQ37
|
Untitled
Abstract: No abstract text available
Text: cP July 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6 4 8 2 -(6 7 /8 4 /1 0 0 /1 2 5 )T -S is a high pe rfo rm an ce, 16 m eg ab tye synch ron ous, dyn am ic RAM m odule organ ized as
|
OCR Scan
|
PDF
|
V6482-
16MByte
168-pin,
|
Untitled
Abstract: No abstract text available
Text: Central TM CMPTA13 CMPTA14 NPN CMPTA63 CMPTA64 PNP Sem i c o n d u c t o r C o r p . SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors
|
OCR Scan
|
PDF
|
CMPTA13
CMPTA14
CMPTA63
CMPTA64
CMPTA13,
OT-23
100mA,
100mA
|
Untitled
Abstract: No abstract text available
Text: CMPTA13 CMPTA14 NPN CMPTA63 CM PTA64 PNP Central“ SILICON COMPLEMENTARY DARLINGTON TRANSISTORS DESCRIPTION: Sem iconductor Corp. The CENTRAL SEMICONDUCTOR CMPTA13, CMPTA63 series types are complementary silicon Darlington transistors manufactured by the epitaxial planar process,
|
OCR Scan
|
PDF
|
CMPTA13
CMPTA14
CMPTA63
PTA64
CMPTA13,
OT-23
100nA
100mA,
100mA
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS >PC8128TB, ¡IPC8151TB, PC8152TB SILICON MMIC LOW CURRENT AMPLIFIERS FOR CELLULAR/CORDLESS TELEPHONES DESCRIPTION The ^¡PC8128TB, 8151TB and 8152TB are silicon monolithic integrated circuits designed as buffer amplifiers for
|
OCR Scan
|
PDF
|
PC8128TB,
IPC8151TB,
PC8152TB
8151TB
8152TB
nitridP15-00-3
WS60-00-1
C10535E)
|
Untitled
Abstract: No abstract text available
Text: J CD ta x CD _J CO ACCUMULATIVE) i_ij m :m oo lh o o o (PITCH) o o RECOMMENDED P.C.BOARD HOLE DIMENSION (t= (MOUNTING SIDE) 1.6) (SCALE 4 15 NOTES IS 25,4 4 F a e tx s / ff QTY/CARTON TAPE 2,5 ,25 5 2 =5 25,4 19,9 17,4 14,9 12,4 18,2 5.7 13,2 10,7 E D
|
OCR Scan
|
PDF
|
310NV
3SIA30
H003M
133HS
1VIH31VW
Q3IdI33dS
3SIM33H10
SS31N0
SIA31I
I133d
|
MAX681
Abstract: No abstract text available
Text: jv lyjxiyH +5V to +10V Voltage Converters _ General Description The MAX68Q/MAX681 are monolithic CMOS dual charge pump voltage converters that provide ±10V outputs from a +5V input voltage. The MAX680/MAX681 provide both a positive stepup charge pump to develop
|
OCR Scan
|
PDF
|
MAX68Q/MAX681
MAX680/MAX681
MAX681
MAX680
MAX664
|
BC5468
Abstract: SMD MARKING CODE C1L 8C550 SMD MARKING 5c npn BC5486 bc327 smd BC547 smd C3z SMD MARKING CODE C1G BC840
Text: SMD TransiStOfS SOT-23 Case U.S. Specification Preferred Series 350mW NEW! NEW! BVa o BVgo (VOITS) (VOLTS) (VOLTS) IcM * V c , (VOLTS) <nA) MM MM MM MAX MM MAX 30 1!i 3.0 10 15 20 75 40 6.0 10 60 100 15 4.5 400 20 40 60 6.0 10 45 250 50 100 60 30 TYPE MO.
|
OCR Scan
|
PDF
|
OT-23
350mW
CMPT2222A
CMPT2369
CMPT2484
CMPT2907A
CMPT3640
CMPT3646
GMPT3904
CMPT3906
BC5468
SMD MARKING CODE C1L
8C550
SMD MARKING 5c npn
BC5486
bc327 smd
BC547
smd C3z
SMD MARKING CODE C1G
BC840
|
Untitled
Abstract: No abstract text available
Text: April 1997 MgL Micro Linear ML4790 Adjustable Output, Low Ripple Boost Regulator GENERAL DESCRIPTION FEATURES The M L4790 is a high efficiency, PFM Pulse Frequency Modulation , boost switching regulator connected in series with an integrated LD O (Low Dropout Regulator)
|
OCR Scan
|
PDF
|
ML4790
L4790
|
Untitled
Abstract: No abstract text available
Text: September 1995 PRELIM INARY Micro Linear ML4790 Adjustable Output, Low Ripple Boost Regulator GENERAL DESCRIPTION FEATURES The M L4790 is a high efficiency, PFM Pulse Frequency Modulation , boost switching regulator connected in series with an integrated LD O (Low Dropout Regulator)
|
OCR Scan
|
PDF
|
ML4790
L4790
bOR34J
|
