Untitled
Abstract: No abstract text available
Text: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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Original
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C3520
C3524
C3520R
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PDF
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C3536
Abstract: No abstract text available
Text: C3520, C3524, C3536 35A AVALANCHE AUTOMOTIVE CELL DIODE WON-TOP ELECTRONICS Pb Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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Original
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C3520,
C3524,
C3536
C3520R
C3536
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PDF
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Untitled
Abstract: No abstract text available
Text: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E
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Original
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C3520
C3524
C3520R
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PDF
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Untitled
Abstract: No abstract text available
Text: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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Original
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C3520
C3524
C3520R
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PDF
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C3520
Abstract: c3524
Text: C3520 & C3524 WTE POWER SEMICONDUCTORS Pb 35A AVALANCHE AUTOMOTIVE CELL DIODE Features Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 184 mil HEX D Anode + C E Mechanical Data B Case: Cell Diode Passivated with Silicon Rubber
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Original
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C3520
C3524
C3520R
C3520
c3524
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PDF
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