C82 diode
Abstract: tekelec diode bas32 501 CHB philips zener diode c18 philips zener diode c47 BAS32 sod80 d10/diode diode c82 DIODE C63
Text: Document reference: PCB reference: STEVAL-TDR007V1 Company: STMicroelectronics Index Quantity Reference C81 - C82 - C83 J1 R17 C7 - C34 - C42 - C58 C6 - C33 - C41 - C57 C5 - C32 - C40 - C56 - C78 - C79 C15 - C17 - C18 - C50 - C53 - C63 C38 - C46 - C67 - C71
|
Original
|
PDF
|
STEVAL-TDR007V1
CSC14BZV55C5V1
CSC59PD57002
CSC59PD57018
CSC59PD57060
610R0
PCIR106006
MVK50VC22MH63TP
293D475X9050D2T
GRH111
C82 diode
tekelec
diode bas32
501 CHB
philips zener diode c18
philips zener diode c47
BAS32 sod80
d10/diode
diode c82
DIODE C63
|
RNA4A8E472JT
Abstract: CC1812 j1 u10 samsung MCCA104K0NRT RC0402 RNA4A header 2x5 MIC29152BU SDRAM 2MX16X4 TSOP54 LED-0603
Text: # Board Station BOM file # date : Thursday August 14, 2003; 10:42:21 # Variant : No_Stuff REFERENCE C37 C38 C39 C40 C41 C42 C43 C44 C45 C46 C47 C48 C49 C50 C51 C52 C53 C55 C56 C57 C58 C59 C60 C61 C62 C63 C64 C65 C66 C67 C68 C69 C70 C71 C72 C73 C74 C75 C76
|
Original
|
PDF
|
am29dl323cb90ei
tsop48w,
mpc744x
cbga360,
2Mx16x4
tsop54,
mic29152bu
qs3257
RNA4A8E472JT
CC1812
j1 u10 samsung
MCCA104K0NRT
RC0402
RNA4A
header 2x5
SDRAM 2MX16X4 TSOP54
LED-0603
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
|
Original
|
PDF
|
MRF19120
MRF19120S
|
226 35K
Abstract: 226 35K capacitor capacitor 226 35K electrolytic capacitor 226 35k 226 35K 649 226 35K 750 gps-500 105 35K capacitor R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
|
Original
|
PDF
|
MRF21120
226 35K
226 35K capacitor
capacitor 226 35K
electrolytic capacitor 226 35k
226 35K 649
226 35K 750
gps-500
105 35K capacitor
R 226 35k
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
|
Original
|
PDF
|
IntegrF19120
MRF19120S
MRF19120
|
capacitor 226 35K
Abstract: 105 35K capacitor 226 35K capacitor capacitor 104 Z30 electrolytic capacitor 226 35k capacitor 104 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
|
Original
|
PDF
|
MRF21120
MRF21120S
capacitor 226 35K
105 35K capacitor
226 35K capacitor
capacitor 104 Z30
electrolytic capacitor 226 35k
capacitor 104 35k
|
Z-34
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.
|
Original
|
PDF
|
MRF19120
MRF19120S
Z-34
|
226 35K capacitor
Abstract: capacitor 226 35K C40 Sprague 105 35K capacitor R 226 35k
Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
|
Original
|
PDF
|
MRF21120R6
226 35K capacitor
capacitor 226 35K
C40 Sprague
105 35K capacitor
R 226 35k
|
226 35K capacitor
Abstract: capacitor 226 35K R 226 35k
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
|
Original
|
PDF
|
2170fficiency,
MRF21120
MRF21120S
226 35K capacitor
capacitor 226 35K
R 226 35k
|
capacitor 106 35K
Abstract: capacitor 226 35K 022 electrolytic 226 35K capacitor 226 35K capacitor 106 35K tantalum 105 35K capacitor capacitor 106 35K electrolytic 226 35K capacitor 106 35K 045 226 35K capacitor datasheet
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
|
Original
|
PDF
|
MRF21120/D
MRF21120
MRF21120S
MRF21120
capacitor 106 35K
capacitor 226 35K 022 electrolytic
226 35K
capacitor 226 35K
capacitor 106 35K tantalum
105 35K capacitor
capacitor 106 35K electrolytic
226 35K capacitor
106 35K 045
226 35K capacitor datasheet
|
z40 mosfet
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor MRF21120R6 N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110
|
Original
|
PDF
|
MRF21120/D
MRF21120R6
MRF21120/D
z40 mosfet
|
capacitor 226 35K
Abstract: 226 35K capacitor
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to
|
Original
|
PDF
|
MRF21120/D
MRF21120
MRF21120S
capacitor 226 35K
226 35K capacitor
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.
|
Original
|
PDF
|
MRF19120/D
MRF19120
MRF19120/D
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to
|
Original
|
PDF
|
MRF19120/D
MRF19120
MRF19120S
|
|
|
226 35K capacitor
Abstract: MRF21120 z40 mosfet 226 35K capacitor 226 35K
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF21120 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110
|
Original
|
PDF
|
MRF21120/D
MRF21120
226 35K capacitor
MRF21120
z40 mosfet
226 35K
capacitor 226 35K
|
IRL 1630
Abstract: MRF19120 MRF19120S
Text: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to
|
Original
|
PDF
|
MRF19120/D
MRF19120
MRF19120S
MRF19120
IRL 1630
MRF19120S
|
A4514
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
|
Original
|
PDF
|
MRF21120
MRF21120R6
A4514
|
226 35K capacitor
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21120 Rev. 10, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
|
Original
|
PDF
|
MRF21120
MRF21120R6
226 35K capacitor
|
z40 mosfet
Abstract: MRF19120
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.
|
Original
|
PDF
|
MRF19120/D
MRF19120
z40 mosfet
MRF19120
|
MRF19120
Abstract: Z25 transistor
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor, Inc. Designed for CDMA base station applications with frequencies from 1930 to
|
Original
|
PDF
|
MRF19120/D
MRF19120
MRF19120
Z25 transistor
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
|
Original
|
PDF
|
MRF21120/D
MRF21120
MRF21120S
MRF21120
|
226 35K
Abstract: 105 35K capacitor capacitor 226 35K 022 electrolytic MRF21120 MRF21120R6
Text: Freescale Semiconductor Technical Data Document Number: MRF21120 Rev. 11, 5/2006 RF Power Field Effect Transistor MRF21120R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
|
Original
|
PDF
|
MRF21120
MRF21120R6
226 35K
105 35K capacitor
capacitor 226 35K 022 electrolytic
MRF21120
MRF21120R6
|
226 35k 051
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
|
Original
|
PDF
|
MRF21120/D
MRF21120
MRF21120S
MRF21120/D
226 35k 051
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19120 MRF19120S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to
|
Original
|
PDF
|
MRF19120/D
MRF19120
MRF19120S
MRF19120/D
|