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    C4D10120 Search Results

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    C4D10120 Price and Stock

    Wolfspeed C4D10120E

    DIODE SIL CARB 1.2KV 33A TO252-2
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    DigiKey C4D10120E Tube 5,653 1
    • 1 $7.48
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    • 100 $4.21253
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    Mouser Electronics C4D10120E 5,380
    • 1 $6.37
    • 10 $5.67
    • 100 $4.21
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    TME C4D10120E 32 1
    • 1 $6.85
    • 10 $6.15
    • 100 $5.33
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    Richardson RFPD C4D10120E 6,093 1
    • 1 $5.8
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    Chip One Stop C4D10120E Tube 7,200
    • 1 $3.72
    • 10 $3.7
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    • 1000 $3.33
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    Wolfspeed C4D10120E-TR

    DIODE SIL CARB 1.2KV 33A TO252-2
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    DigiKey C4D10120E-TR Digi-Reel 3,822 1
    • 1 $12.36
    • 10 $8.605
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    C4D10120E-TR Cut Tape 3,822 1
    • 1 $12.36
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    C4D10120E-TR Reel 2,500 2,500
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    Mouser Electronics C4D10120E-TR
    • 1 $11.05
    • 10 $8.1
    • 100 $6.28
    • 1000 $5.62
    • 10000 $5.51
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    Newark C4D10120E-TR Bulk 2,500
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    Richardson RFPD C4D10120E-TR 2,500
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    • 10000 $5.8
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    Chip One Stop C4D10120E-TR Cut Tape 3,484
    • 1 $8.66
    • 10 $5.97
    • 100 $4.54
    • 1000 $4.04
    • 10000 $3.71
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    Wolfspeed C4D10120H

    DIODE SIL CARB 1.2KV 31.5A TO247
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    DigiKey C4D10120H Tube 1,226 1
    • 1 $9.52
    • 10 $9.52
    • 100 $5.77733
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    Mouser Electronics C4D10120H 197
    • 1 $8.28
    • 10 $7.23
    • 100 $5.76
    • 1000 $5.05
    • 10000 $4.97
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    Newark C4D10120H Bulk 1
    • 1 $9.96
    • 10 $8.98
    • 100 $7.12
    • 1000 $5.76
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    TME C4D10120H 1
    • 1 $7.94
    • 10 $6.3
    • 100 $5.88
    • 1000 $5.88
    • 10000 $5.88
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    Richardson RFPD C4D10120H 1
    • 1 $6.27
    • 10 $6.27
    • 100 $5.95
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    Wolfspeed C4D10120D

    DIODE ARR SIC 1200V 19A TO247-3
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    DigiKey C4D10120D Tube 800 1
    • 1 $9.35
    • 10 $9.35
    • 100 $5.50033
    • 1000 $4.21251
    • 10000 $4.21251
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    Mouser Electronics C4D10120D 900
    • 1 $8.99
    • 10 $5.11
    • 100 $5.11
    • 1000 $4.21
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    Newark C4D10120D Bulk 5,106 1
    • 1 $8.39
    • 10 $7.33
    • 100 $4.85
    • 1000 $4.56
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    TME C4D10120D 17 1
    • 1 $7.3
    • 10 $5.79
    • 100 $5.4
    • 1000 $5.4
    • 10000 $5.4
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    Richardson RFPD C4D10120D 765 1
    • 1 $5.8
    • 10 $5.8
    • 100 $5.5
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    Chip One Stop C4D10120D Tube 320
    • 1 $8.27
    • 10 $4.7
    • 100 $4.02
    • 1000 $3.92
    • 10000 $3.92
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    Wolfspeed C4D10120A

    DIODE SIL CARB 1.2KV 33A TO220-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C4D10120A Tube 289 1
    • 1 $9.35
    • 10 $9.35
    • 100 $9.35
    • 1000 $4.2125
    • 10000 $4.2125
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    Mouser Electronics C4D10120A 192
    • 1 $8.04
    • 10 $6.37
    • 100 $5.08
    • 1000 $4.34
    • 10000 $4.34
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    Newark C4D10120A Bulk 8,745 1
    • 1 $8.42
    • 10 $7.86
    • 100 $6.02
    • 1000 $5.31
    • 10000 $5.31
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    TME C4D10120A 48 1
    • 1 $7.37
    • 10 $7.37
    • 100 $6.53
    • 1000 $6.05
    • 10000 $6.05
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    Richardson RFPD C4D10120A 225 1
    • 1 $5.8
    • 10 $5.8
    • 100 $5.5
    • 1000 $5.5
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    Chip One Stop C4D10120A Tube 886
    • 1 $7.29
    • 10 $4.72
    • 100 $4.71
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    C4D10120 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C4D10120A Cree Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 14A TO220-2 Original PDF
    C4D10120D Cree Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 1200V 9A TO247 Original PDF
    C4D10120E Cree/Wolfspeed Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 10A TO252-2 Original PDF
    C4D10120E-TR Cree/Wolfspeed Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 1.2KV 33A TO252-2 Original PDF
    C4D10120H Cree/Wolfspeed Discrete Semiconductor Products - Diodes - Rectifiers - Single - ZRECTM 10A 1200V SIC SCHOTTKY DI Original PDF

    C4D10120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c4d10120

    Abstract: C4D10120D
    Text: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF = 10 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching


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    C4D10120D O-247-3 C4D10120D C4D10120 c4d10120 PDF

    c4d10120

    Abstract: No abstract text available
    Text: C4D10120D–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF; TC<135˚C = 18 A Qc =69 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


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    C4D10120D O-247-3 C4D10120D C4D10120 c4d10120 PDF

    C4D10120A

    Abstract: CSD04060 12kv fast switching
    Text: C4D10120A–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF = 10 A Qc = 66 nC Features • • • • • Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Swtitching


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    C4D10120A O-220-2 C4D10120A C4D10120 CSD04060 12kv fast switching PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


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    C4D10120A O-220-2 C4D10120A PDF

    C4D10120

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 13 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


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    C4D10120D O-247-3 O-247 C4D10120D C4D10120 PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120E VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 16 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


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    C4D10120E O-252-2 C4D10120E PDF

    C4D10120

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original
    C4D10120D O-247-3 O-247 C4D10120D C4D10120 PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original
    C4D10120D O-247-3 O-24planted C4D10120A PDF

    c4d10120

    Abstract: C4D10120E TO-252-2
    Text: C4D10120E–Silicon Carbide Schottky Diode Z-Rec Rectifier VRRM = 1200 V IF, = 16 A TC<135˚C Qc Features • • • • • = 66 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


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    C4D10120E 1200-Volt O-252-2 C4D10120E C4D10120 c4d10120 TO-252-2 PDF

    C4D10120

    Abstract: No abstract text available
    Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching


    Original
    C4D10120D O-247-3 O-24planted C4D10120A C4D10120 PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120E VRRM Silicon Carbide Schottky Diode Qc Features = 52 nC Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits • •


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    C4D10120E 1200-Volt O-252-2 C4D10120E PDF

    Untitled

    Abstract: No abstract text available
    Text: C4D10120A VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 14 A Z-Rec Rectifier Qc Features • • • • • 52 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching


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    C4D10120A O-220-2 C4D10120A PDF

    c4d10120

    Abstract: CSD04060
    Text: C4D10120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 10 A Qc Features • • • • • Package 1200-Volt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior


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    C4D10120E 1200-Volt O-252-2 C4D10120E C4D10120 c4d10120 CSD04060 PDF

    cmf20120

    Abstract: CMF20120D mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET
    Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 mosfet 10a 800v 423F power Diode 800V 20A MOSFET 20a 800v Cree SiC MOSFET PDF

    C2M1000170

    Abstract: Diode 1S 2473
    Text: VDS 1700 V ID @ 25˚C 4.9 A C2M1000170D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 1.0 Ω N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    C2M1000170D O-247-3 C2M1000170D C2M1000170 Diode 1S 2473 PDF

    cmf20120

    Abstract: CMF20120D MOSFET 20a 800v
    Text: CMF20120D-Silicon Carbide Power MOSFET Z-FeTTM MOSFET VDS = 1200 V ID MAX = 42 A N-Channel Enhancement Mode RDS(on) Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    CMF20120D-Silicon O-247-3 CMF20120D CMF20120D cmf20120 MOSFET 20a 800v PDF

    c2m0080120

    Abstract: C2M0080120D 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams
    Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


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    C2M0080120D O-247-3 C2M0080120D c2m0080120 12v to 1000v inverters circuit diagrams 10v to 1000v inverters circuit diagrams PDF

    C4D05120

    Abstract: CMF10120 CSD01060E c4d02120e c4d02120 C3D02060 C4D02120A C3D02060A C2D20120 c3d0606
    Text: Power Product Line Z-RecTM Rectifiers DALL, Rev. G Datasheet: C3 VRRM V IF(AVG) (A) IF(AVG) (A) (Tc=150°C) (Tc=100°C) Zero-Recovery Rectifiers and VF(T VF(T TJ(Max) Max Typ Max (°C) Package Type Recommended for new designs? J=25°C) Typ J=175°C) CSD01060A


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    CSD01060A CSD01060E C3D02060A C3D02060E C3D02060F C3D03060A C3D03060E C3D03060F C3D04060A C3D04060E C4D05120 CMF10120 c4d02120e c4d02120 C3D02060 C4D02120A C2D20120 c3d0606 PDF

    C2M0160120D

    Abstract: No abstract text available
    Text: VDS 1200 V ID MAX @ 25˚C C2M0160120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS(on) 17.7 A 160 mΩ N-Channel Enhancement Mode Features • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    C2M0160120D O-247-3 C2M0160applications C2M0160120D PDF

    Untitled

    Abstract: No abstract text available
    Text: VDS 1200 V ID @ 25˚C 31.6 A C2M0080120D Silicon Carbide Power MOSFET TM Z-FET MOSFET RDS on 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive


    Original
    C2M0080120D O-247-3 C2M0080120D PDF