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TDK Corporation C5750X7T2E155K200KA Multilayer Ceramic Capacitors MLCC - SMD/SMT 2220 250V 1.5uF X7T 10% T: 2mm
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Mouser Electronics	C5750X7T2E155K200KA		1,130			1 $3.3 10 $2.29 100 $1.66 1000 $1.28 10000 $1.18	Buy Now
TDK Corporation C5750X7T2E155M200KA Multilayer Ceramic Capacitors MLCC - SMD/SMT RECOMMENDED ALT 810-C5750X7T2E155KKA
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Mouser Electronics	C5750X7T2E155M200KA		1,000			1 $3.37 10 $2.28 100 $1.66 1000 $1.27 10000 $1.16	Buy Now
TDK Corporation C5750X7R2A155M230KA Multilayer Ceramic Capacitors MLCC - SMD/SMT SUGGESTED ALTERNATE 810-C3225X7R2A225K
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Mouser Electronics	C5750X7R2A155M230KA		400			1 $1.7 10 $0.911 100 $0.826 1000 $0.5 10000 $0.5	Buy Now
TDK Corporation C5750JB2A155M230KA Multilayer Ceramic Capacitors MLCC - SMD/SMT SUGGESTED ALTERNATE 810-C3225JB2A225K23B
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Mouser Electronics	C5750JB2A155M230KA		286			1 $1.54 10 $1.16 100 $0.861 1000 $0.696 10000 $0.592	Buy Now
Sensata Technologies LELB1-1REC5-52-80.0-1-01-V Circuit Breakers Cir Brkr Hyd Mag
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Mouser Electronics	LELB1-1REC5-52-80.0-1-01-V					1 $102.25 10 $102.25 100 $102.25 1000 $102.25 10000 $102.25	Get Quote

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C5 155 10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
V23806-A84-C5 Abstract: B78108-S1153-K optical module 2X9 Text: V23806-A84-C5 3.3 V Single Mode 155 MBd ATM/SDH/SONET 2x9 Transceiver with Rx Monitor Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) PC board thickness (2) .080 Optical Centerline (1.5±0.1) .06±.004 (0.73±0.1)	Original	V23806-A84-C5 25including D-13623, V23806-A84-C5 B78108-S1153-K optical module 2X9	PDF
A84 diode Abstract: B78108-S1153-K V23806-A84-C5 analog transmitter circuit using laser diode Text: V23806-A84-C5 3.3 V Single Mode 155 MBd ATM/SDH/SONET 2x9 Transceiver with Rx Monitor Dimensions in mm inches (11.5 max) .453 max. View Z (Lead cross section and standoff size) PC board thickness (2) .080 Optical Centerline (1.5±0.1) .06±.004 (0.73±0.1)	Original	V23806-A84-C5 D-13623, A84 diode B78108-S1153-K V23806-A84-C5 analog transmitter circuit using laser diode	PDF
Untitled Abstract: No abstract text available Text: ASX415 250 ~ 4000 MHz MMIC Amplifier 4 Features Description  14 dB Gain at 2000 MHz  27 dBm P1dB at 2000 MHz  42 dBm OIP3 at 2000 MHz  ACLR @ WCDMA 4FA: -51 dBc @ Pout = +13 dBm, +/- 5 MHz offset  MTTF > 100 Years  Single Supply The ASX415, a power amplifier MMIC, has a high	Original	ASX415 ASX415, 100pF	PDF
tq crystal Abstract: CD4045 CMOS 4045 CD4045AD contador 21 stage counter 40N25 4045 4045BPC 4045BDM Text: 2 1 -stufiger Zähler 21 -Stage Counter Compteur B 21 etages Contatore a 21 stad1 Contador de 21 pasos Tl t -Ta 1611 15 I I Sp Sn CMOS 4045 F 1 14 ] 1 13 1 1 12 1 11 1 10 11 GRENZDATEN TYP Type Type Tip0 Tfpo Hersteller Manufatk Fabricants Produttori FabRcanteS	Original	4045BDC 4045BDM 4045BFM 220022oC 21-bit 097152MHz tq crystal CD4045 CMOS 4045 CD4045AD contador 21 stage counter 40N25 4045 4045BPC 4045BDM	PDF
Untitled Abstract: No abstract text available Text: 155 Mbps Bi-directional Single Fiber Transceiver B-1x/1x-155S-TPM3-SSC4-102 Features • Coaxial single mode single ﬁber package with SC connector • Wavelength Tx 1310nm / Rx 1550nm B-13/15-155S-TPM3-SSC4-102 • Wavelength Tx 1550nm / Rx 1310nm (B-15/13-155S-TPM3-SSC4-102)	Original	B-1x/1x-155S-TPM3-SSC4-102 1310nm 1550nm B-13/15-155S-TPM3-SSC4-102) 1550nm 1310nm B-15/13-155S-TPM3-SSC4-102) GR-468-CORE LUMNDS11506-Dec0104	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF1570N Rev. 10, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF1570NT1 MRF1570FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these	Original	MRF1570N MRF1570NT1 MRF1570FNT1 MRF1570NT1	PDF
MAX954 Abstract: F226 DCM103 Text: * MAX954 FAMILY MACROMODELS * -* FEATURES: * Op Amp + Comparator * 7uA Typical Supply Current * Comparator and Op Amp Input Range Includes Ground * Outputs Swing Rail to Rail * Internal Comparator Hysteresis * Op Amp Gain Stability 10V/V	Original	MAX954 MAX954 RH101 RH102 DP101 DP102 VP100 F226 DCM103	PDF
mrf1535 Abstract: TRIMMER capacitor AN721 MRF1535FNT1 MRF1535N MRF1535NT1 VK200 A05T A113 AN211A Text: Freescale Semiconductor Technical Data Document Number: MRF1535N Rev. 10, 9/2006 RF Power Field Effect Transistors MRF1535NT1 MRF1535FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices	Original	MRF1535N MRF1535NT1 MRF1535FNT1 MRF1535NT1 mrf1535 TRIMMER capacitor AN721 MRF1535FNT1 MRF1535N VK200 A05T A113 AN211A	PDF
Untitled Abstract: No abstract text available Text: PTF 10041 12 Watts, 1.99 GHz GOLDMOS Field Effect Transistor Description The PTF 10041 is a 12–watt GOLDMOS FET intended for large signal amplifier applications from 1.0 to 2.0 GHz. It operates at 38% efficiency with 10 dB minimum gain. Nitride surface passivation and	Original	JMC5701 220ohm 220ZTR 1-877-GOLDMOS 1522-PTF	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	Original	MRF3010/D MRF3010 MRF3010 MRF3010/D	PDF
JMC5701 Abstract: Y 335 Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold	Original	PCS6106-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF JMC5701 Y 335	PDF
2322-705-70101 Abstract: limiter schematics of multilayer pcb capacitor C0402 mks3733 AN98082 TZA3023 TZA3033 TZA3034 L0603cs Text: APPLICATION NOTE OM5804 Receiver demoboard for 155/622/1250 Mbps AN98082 Philips Semiconductors OM5804 Receiver demoboard for 155/622/1250 Mbps Application Note AN98082 Abstract A demoboard for 3 types of transimpedance amplifiers/limiting amplifier combinations is described. The	Original	OM5804 AN98082 TZA3033/TZA3034 TZA3023/TZA3024 TZA3043/TZA3044 OM5804. 2322-705-70101 limiter schematics of multilayer pcb capacitor C0402 mks3733 AN98082 TZA3023 TZA3033 TZA3034 L0603cs	PDF
HMD12HO-W Abstract: HMD24HC-W HMD8HC-W Text: Standard Single W-Band Antennas 2500 to 2700 MHz Type Number: HMDxxpa-Wzz xx = Number of bays 8, 12, 16, 24,or 32 p = Polarization (H or V) a = Azimuth pattern type (O, C, W, N, or P; see page 307) zz = Beam tilt in tenths of a degree Gain Data (dBi) at W Band	Original	32-Bay 12-Bay HMD12HO-W HMD24HC-W HMD8HC-W	PDF
Untitled Abstract: No abstract text available Text: P/N: B-13/15-155 C -T(3)-SSC5(7)(-G5) 155 Mbps Bi-directional Receptacle Single Fiber Transceiver Features z z z z z z z z z z z z z z z Diplexer Single Mode Single Fiber 1x9 SC Receptacle Connector Wavelength Tx 1310nm/Rx 1530 nm SONET OC-3 SDH STM-1 Compliant	Original	B-13/15-155 1310nm/Rx B-13/15-155-T-SSC5 B-13/15-155-T3-SSC5 B-13/15-155-T B-13/15-155C-T GR-468-CORE DS-6307	PDF

Untitled Abstract: No abstract text available Text: High Power Single W-Band Antennas 2500-2700 MHz Type Number: HMDxxpa-Wzz-H xx = Number of bays 8, 12, 16, or 24 p = Polarization (H or V) a = Azimuth pattern type (O or C; see page 307) zz = Beam tilt in tenths of a degree Gain Data (dBi) at W Band/NQ Band	Original	12-Bay 16-Bay 24-Bay HMD12HO-W-H HMD16HO-W-H HMD24HOcm)	PDF
VS648 Abstract: vs447 VS847 varo VS247 Varo Semiconductor VS247 VJ148 VS647 Vj248 varo VS247 VS148 Text: VARO SEMICONDUCTOR, INC. G P.O. BOX 676, 1000 N. SHILOH, GARLAND, TEX. 75040 214 272-4551 TWX 910-860-5178 EPOXY BRIDGE RECTIFIERS 1 AMP 2 & 6 AMP 10 AMP • Controlled Avalanche series has 250V, 450V, 650V and 850V minimum avalanche volt age8 (V br) ■ Non-controlled Avalanche series with 50V,	OCR Scan	ReJ447 DLS-042 VJ647 VJ847 VJ048 VJ148 VS648 vs447 VS847 varo VS247 Varo Semiconductor VS247 VJ148 VS647 Vj248 varo VS247 VS148	PDF
Untitled Abstract: No abstract text available Text: KM64B1003 BiCMOS SRAM 256Kx4 Bit With ÜE High-Speed BiCMOS Static RAM FEATURES .;^ •! ; GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(max.) (CMOS): 10 mA(max.) Operating KM64B1003J- 8:165 mA(Max.)	OCR Scan	KM64B1003 256Kx4 KM64B1003J- KM64B1003J-10: KM64B1003J-12: KM64B1003J-15: KM64B1003J 32-SCU-400 KM64B1003 576-bit	PDF
Untitled Abstract: No abstract text available Text: KM68B1002 BiCMOS SRAM 128Kx8 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns Max. • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10 nnA(max.) Operating KM68B1002J-8 :175mA(Max.) KM68B1002J-10: 165 mA(Max )	OCR Scan	KM68B1002 128Kx8 KM68B1002J-8 175mA KM68B1002J-10: KM68B1002J-12: KM68B1002J-15: KM68B1002J 32-SOJ-400 KM68B1002	PDF
Untitled Abstract: No abstract text available Text: KM64V1003A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns(Max ) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12: 160mA(Max.)	OCR Scan	KM64V1003A KM64V1003A-12: 160mA KM64V1003A-15 KM64V1003A-17 KM64V1003A-20 KM64V1003AJ 32-SOJ-400 KM64V1003AT: 32-TSOP2-4QOF	PDF
Untitled Abstract: No abstract text available Text: KM64B1003 BiCMOS SRAM 256Kx4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12,15 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(max.) (CMOS): 10mA(max.) Operating KM64B1003J- 8:165 mA(Max.) KM64B1003J-10:155 mA(Max.)	OCR Scan	KM64B1003 256Kx4 KM64B1003J- KM64B1003J-10 KM64B1003J-12: KM64B1003J-15: KM64B1003J 32-SOJ-4QO KM64B1003 576-bit	PDF
4kx4 ram Abstract: No abstract text available Text: QS8769 • High-Speed CMOS 4Kx4 SRAM with Fast Chip Select Q S8769 FEATURES/BENEFITS • High Speed Access and Cycle times ■ 10ns/12ns/15ns/20ns/25ns Commercial • 15ns/20ns/25ns/35ns Military • Non power down for fast Chip select access • 5ns/6ns/8ns/10ns/12ns chip select access times	OCR Scan	QS8769 10ns/12ns/15ns/20ns/25ns 15ns/20ns/25ns/35ns 5ns/6ns/8ns/10ns/12ns MIL-STD-883 S8769 20-pin 4kx4 ram	PDF
Untitled Abstract: No abstract text available Text: Product Range of Traction Batteries DIN Type Type 50 Ah Type 60 Ah D im e n s io n m m Length Height ±2 198.5 ±2 300 Type 80 Ah D im e n s io n (m m ) W e ig h t In kg Length ±2 198.5 ‘ Height (1) ±2 346 ‘ H eight (2) ±2 334.5 (± 5 % ) Ah(C5)	OCR Scan	5BPzS250 2BPzS120 3BPzS180 4BPzS200 6BPzS360 5BPzS300 4BPzS240 eig101 6BPzS840 6BPzS930	PDF
Untitled Abstract: No abstract text available Text: — DATE REV ECN APP’D. BY 6 -5 -0 8 C3 8444 TRM 1 -2 9 -0 9 C4 8642 TA 8 -6 -1 0 C5 9037 TRM .100 [2.54] 8 - - . 0 5 0 [1.27] (9) 0.035 [0.89] ±.0 0 3 [0.08] (10)-$- $•10.006 [0.151 PIN #1 -$ - -$- -$ - -$- 0.065 [1.65] ±.0 0 3 [0.08] ( 2 ) — I -0^ 10.006 [0.1571	OCR Scan		PDF
QS8886 Abstract: No abstract text available Text: QS8886A Q • • • • • • High-Speed CMOS 16KX4 SRAM with Output Enable High Speed Access and Cycle times 8ns/10ns/12ns/15ns Commercial 10ns/12ns/15ns/20ns Military Output Enable feature Low power, high-speed QCMOS technology Military product compliant to MIL-STD-883, Class B	OCR Scan	QS8886A 16KX4 qss886a 8ns/10ns/12ns/15ns 10ns/12ns/15ns/20ns MIL-STD-883, QS8886A 16Kx4. MDSS-00024-00 QS8886	PDF

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C5 155 10 Search Results

C5 155 10 Price and Stock

TDK Corporation C5750X7T2E155K200KA

TDK Corporation C5750X7T2E155M200KA

TDK Corporation C5750X7R2A155M230KA

TDK Corporation C5750JB2A155M230KA

Sensata Technologies LELB1-1REC5-52-80.0-1-01-V

C5 155 10 Datasheets Context Search

V23806-A84-C5

A84 diode

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tq crystal

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MAX954

mrf1535

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JMC5701

2322-705-70101

HMD12HO-W

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VS648

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4kx4 ram

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QS8886