LTS 6-NP
Abstract: LTS 15-NP CAS 6-NP LTSR 15-NP LTSR 6-NP ch-1228 cksr6-np LTSR 25-NP CASR50-NP 743 LEM
Text: Technical Information CAS / CASR / CKSR series Current Transducers Insulated Highly Accurate Measurements from 1.5 to 50 ARMS CAS / CASR / CKSR series Current Transducers Future precision. Future performances. Now available. CAS / CASR / CKSR series Current Transducers
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RS-159
CH-1228
LTS 6-NP
LTS 15-NP
CAS 6-NP
LTSR 15-NP
LTSR 6-NP
cksr6-np
LTSR 25-NP
CASR50-NP
743 LEM
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Untitled
Abstract: No abstract text available
Text: Product: XRT83VSH316IB-F Package: 316L L‐fpBGA 21x21 Material Declaration Statement of Materials, Construction Material Component Material Weight % Name Weight (g) Element/Compound CAS No. 1 Die 0.0360 Silicon 7440‐21‐3 0.0360
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XRT83VSH316IBâ
21x21)
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NT1GC64B88A0NF-CG
Abstract: JESD51-2 DDR3 85 ddr3 connector PCB footprint NT1GC64B88A0NF 240 unbuffered DDR3
Text: NT1GC64B88A0NF / NT2GC64B8HA0NF 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500 PC3-8500 PC3-10600
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NT1GC64B88A0NF
NT2GC64B8HA0NF
PC3-8500
PC3-10600
DDR3-1066/1333
128Mx8
NT1GC64B88A0NF-CG
JESD51-2 DDR3 85
ddr3 connector PCB footprint
240 unbuffered DDR3
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Untitled
Abstract: No abstract text available
Text: Introduction MODELE Raccordements MODE D’EMPLOI Installation PG-F312X PG-F262X PG-F212X Mise en route rapide PROJECTEUR DE DONNEES Opération de base Fonctions pratiques Appendice REMARQUE IMPORTANTE • Pour vous aider à retrouver votre projecteur en cas de perte ou de vol,
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PG-F312X
PG-F262X
PG-F212X
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Silicon Magic
Abstract: SM81L256K32AL-35S
Text: Silicon SM81L256K32A MAGIC 256K x 32 EDO DRAM 256K x 32 EDO DRAM 3.3 Volt, 66 / 83 MHz Features < 262,144-Word by 32-Bit organization < Single +3.3V ± 0.3V power supply < 512 refresh cycles / 8 ms < Refresh modes: RAS-only, CAS-before-RAS CBR and Hidden
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SM81L256K32A
144-Word
32-Bit
100-Pin
SM81L256K32A
144-word
Silicon Magic
SM81L256K32AL-35S
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Untitled
Abstract: No abstract text available
Text: WOM Material Safety Data Sheet Material Content Declaration Material name Lead Wire 59.11% Substance name e.g. Copper Cu , Gold (Au) CAS no., if known Copper (Cu) 7440-50-8 Phosphorus (P) 7723-14-0 Arsenic (As) 7440-38-2 Tin (Sn) 7440-31-5 Oxygen (O) 7782-44-7
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F245
Abstract: an6161 16L8D DP8422A an-6161 components combinational logic circuit AN61-61 AN-616 C1995 DP8420A
Text: National Semiconductor Application Note 616 Lawson H C Chang March 1989 INTRODUCTION This application note describes interfacing the DP8422A DRAM controller also applicable to DP8420A 21A to the 68020 with slower memories This design is based upon burst mode access by holding RAS low and toggling CAS It
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DP8422A
DP8420A
DP8422A
20-3A
F245
an6161
16L8D
an-6161
components combinational logic circuit
AN61-61
AN-616
C1995
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INTEL 450NX
Abstract: intel 8042 8042 intel kbc intel G31 circuit diagram LXG Series DIODE C04 06 intel 8042 port 64h pciset datasheet transistor w04 450GX
Text: intel Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998, 1999 Information in this document is provided in connection with Intel products. No license, express or
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450NX
82454NX
82453NX
82452NX
82451NX
INTEL 450NX
intel 8042
8042 intel kbc
intel G31 circuit diagram
LXG Series
DIODE C04 06
intel 8042 port 64h
pciset datasheet
transistor w04
450GX
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CY7C960
Abstract: CY7C964 MC68020
Text: 3.3 PREN* SWDEN* RAS*/CS4 CAS*/CS5 AM2 ROW/CS2 COL/CS3 AM1 GND DBE0 AM0 Vcc DBE1 DBE2 DBE3 R/W* Pin Description Pin 1 CY7C960 TQFP Top View LA7 LA6 LA5 LA4 IRQ* LA3 Gnd AM5 LA2 Vcc LA1 DS1* LA0 LDS DENIN1* LAEN DENO* IACKOUT* IACKIN* IACK* AS* LADI STROBE
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CY7C960
CY7C960
CY7C964s
CY7C964
MC68020.
MC68020
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intel 8042
Abstract: 450GX 450NX 82451NX 82452NX 82453NX 82454NX CL-CK L10
Text: intel Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Order Number: 243771-004 June 1998 Intel Corporation 1998 Information in this document is provided in connection with Intel products. No license, express or
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450NX
82454NX
82453NX
82452NX
82451NX
intel 8042
450GX
CL-CK L10
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 1 05B S ELECTRONICS CMOS D R A M 4 M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.
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16Mx4,
512Kx8)
KM44C4105BS
GG34727
71b4142
Q03472Ã
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400J
Abstract: No abstract text available
Text: SIEMENS 16M X 4-Bit Dynamic RAM 4k & 8k Refresh hYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Prelim inary Inform ation 7.2 mW standby (TTL) 720 nW standby (MOS) _ Read, write, read-modify-write, CAS-beforeRAS refresh (CBR), RAS-only refresh, hidden refresh and self
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3164400J/T
3165400J/T
3164400J/T-50)
3164400J/T-60)
3165400J/T-50)
3165400J/T-60)
400J/T-50/-60
400J
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 16 MBit Synchronous DRAM second generation HYB 39S16400/800/160AT-8/-10 Advanced Information • High Performance: CAS latency = 3 Multiple Burst Read with Single Write Operation -8 -10 Units 125 100 MHz Automatic and Controlled Precharge Command
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39S16400/800/160AT-8/-10
cycles/64
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GG12
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS2181A CEPT Primary Rate Transceiver PIN ASSIGNMENT FEATURES • Single-chip primary rate transceiver meets CCITT standards G.704, G.706 and G.732 • Supports new CRC4-based framing standards and CAS and CCS signalling standards TMSYNC
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DS2180A
DS2175
DS2186
DS2187
DS2188
DS2181A
DS2181A
40-PIN
2bl4130
GG12
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Untitled
Abstract: No abstract text available
Text: DS2143/DS2143Q DALLAS SEMICONDUCTOR D S 2 1 4 3 /D S 2 1 4 3 Q E1 Controller FEATURES PIN ASSIGNMENT • E1/ISDN-PRI framing transceiver TCLK [ • Frames to CAS, CCS, and CRC4 formats • Parallel Control Port • Onboard two frame elastic store slip buffer
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DS2143/DS2143Q
DS2143
DS2143
44-PIN
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IN5334B
Abstract: a8wg
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54260B MCM5L4260B MCM5V4260B Product Preview 256K x 16 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54260B is a 0.6n CMOS high-speed dynamic random access memory. It is organized as 262,144 sixteen-bit words and fabricated with CMOS siiicon-gate
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MCM54260B
MCM5L4260B
MCM5V4260B
MCM5V4260BJ70
MCM5V4260BJ80
MCM5V4260BJ10
MCM5V4260BT70
MCM5V4260BT80
IN5334B
a8wg
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TB 1226 BN
Abstract: 531 T70 n03 0AS001 B05AD 2U 34
Text: in y Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451 NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998,1999 Information in this document is provided in connection with Intel products. No license, express or
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450NX
82454NX
82453NX
82452NX
TB 1226 BN
531 T70 n03
0AS001
B05AD
2U 34
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V52C8128
Abstract: V52C8128-80
Text: MOSEL- VITELIC V52C8128 MULTIPORT VIDEO RAM WITH 128K X 8 DRAM AND 256 X 8 SAM HIGH PERFORMANCE V52C8128 70 PRELIMINARY 80 10 Max. RAS Access Time, tRAc 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAc) 20 ns 25 ns 25 ns Max. Column Address Access Time, ( t ^ )
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V52C8128
V52C8128
V52C8128-80
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Untitled
Abstract: No abstract text available
Text: Advance information •■ AS4SC1M 16E5 A 1,8V 1M x 16 C M O S Intelliwatt1'' DRAM EDO Features • Organization: 1,048,576 words x 16 bits • High speed • 1 0 2 4 refresh cycles, 16 m s refresh interval - RAS-only or CAS-before-RAS refresh or self refresh
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42-pin
42-pin
AS4SC1M16E5-100JC
44/50-pin
AS4SC1M16E5-100TC
1M16E5
44/50-pin
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13001 LZ
Abstract: SR 13001 PA 13001
Text: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh
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AS4VC1M16E5
42-pin
44/50-pin
AS4VC1M16E5-50JC
AS4VC1M16E5-50TC
AS4VC1M16E5-60JC
AS4VC1M16E5-60TC
13001 LZ
SR 13001
PA 13001
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70 ns ns Í rac RAS access time fcAC CAS access time 13 15 20 tpA
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5116400BJ
QG0hb33
5116400BJ-50/-60/-70
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 32-Bit Dynamic RAM Module 2M X 16-Bit Dynamic RAM Module HYM 321160S/GS-60/-70 Advanced Information 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh Fast access and cycle time
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32-Bit
16-Bit
321160S/GS-60/-70
16-bit)
G071720
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Untitled
Abstract: No abstract text available
Text: 1 M x 1 DRAM m olaic MDM11000-80/10/12/15 Issue 3.1 : October 1991 Pin Definitions Package Type: T.V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Row Access Times of 80,100/120/150 ns 5 Volt Supply ± 10% 512 Refresh Cycles 8 ms CAS before RAS Refresh
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MDM11000-80/10/12/15
MIL-STD-883C
MIL-883
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Untitled
Abstract: No abstract text available
Text: intoT 21256 262,144 x 1-BIT DYNAMIC RAM WITH PAGE MODE Parameter 21256-06 21256-07 21256-08 21256-10 Units tRAC Symbol Access Time from RAS 60 70 80 100 ns tCAC Access Time from CAS 20 20 20 50 ns tRC Read Cycle Time 110 130 150 190 ns • Page Mode Capability
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18-PIN
16-LEAD
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