BC846-BC848
Abstract: BC846 BC847 BC848
Text: BC846-BC848 NPN SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : BC846 80V BC847 50V BC848 30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C
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BC846-BC848
BC846
BC847
BC848
OT-23
BC846
BC847
BC846-BC848
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BC847
Abstract: BC846-BC848 NPN CBO 40V CEO 25V EBO 5V BC846 BC848
Text: BC846-BC848 NPN SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : BC846 80V BC847 50V BC848 30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C
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BC846-BC848
BC846
BC847
BC848
OT-23
BC846
BC847
BC846-BC848
NPN CBO 40V CEO 25V EBO 5V
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PNP -50V -200mA sot23
Abstract: C858 BC858 BC856 BC857
Text: BC856-BC858 PNP SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : -0.1 mA Reverse Voltage V (BR)CBO : BC856 -80V BC857 -50V BC858 -30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C
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BC856-BC858
BC856
BC857
BC858
OT-23
BC856
BC857
PNP -50V -200mA sot23
C858
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Untitled
Abstract: No abstract text available
Text: NPN Epitaxial Planar Transistor Formosa MS FMBT2222AW List List. 1 Package outline. 2
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FMBT2222AW
1000hrs
15min
20sec
1000cycle
96hrs
10sec
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3DD303A
Abstract: CBO 40V CEO 25V EBO 5V 3DD303
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.
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3DD303A
3DD303A
CBO 40V CEO 25V EBO 5V
3DD303
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BC557
Abstract: BC557 transistor BC556 BC558C
Text: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 * "G" Lead Pb -Free TO-92 2 BASE 1 1 EMITTER 2 3 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
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BC556,
BC557,
BC558,
BC556
BC557
BC558
BC557
BC557 transistor
BC556
BC558C
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BC557
Abstract: bc558 bc556 BC557 TRANSISTOR BC558 PNP transistor CBC556 Transistor Bc556 BC557 PNP TRANSISTOR TRANSISTOR BC558 bc556 equivalent
Text: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 TO-92 2 BASE 1 1 EMITTER 2 3 Maximum Ratings TA=25℃ C unless otherwise noted Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
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BC556,
BC557,
BC558,
BC556
BC557
BC558
BC557
bc558
bc556
BC557 TRANSISTOR
BC558 PNP transistor
CBC556
Transistor Bc556
BC557 PNP TRANSISTOR
TRANSISTOR BC558
bc556 equivalent
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2n 2222A 3904
Abstract: No abstract text available
Text: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470
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DGG7423
160MHz
100nA
2N3711
MPS3711
90MHz
MPS-A65
100nA
2n 2222A 3904
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marking r2k
Abstract: marking r1c GAJ SOT23 R1P SOT-223
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.
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OT-23)
SSTH30
MMST1130
SC-59/Japanese
BCX70K
BCX71G
BCX71H
BCX71J
BFS17
marking r2k
marking r1c
GAJ SOT23
R1P SOT-223
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z10m
Abstract: psa56
Text: Transistors TO-92 JEDEC Standards Numbers #N PN Transistors General purpose small signal amplifiers P a ckage BV qbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) (EBC) 30V 2N3860 TO -92 (ECB) 2N5088 BV ebo Min. hFE Min . Max.
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100nA
160MHz
2N2925
2N3711
MPS3711
2N3860
100nA
V100m
PS-A63
z10m
psa56
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2n3904 TO-92
Abstract: No abstract text available
Text: Transistors TO-92 JEDEC Standards Numbers •N P N Transistors General purpose small signal amplifiers Package B V cbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) CEBC) 30V 2N3860 TO -92 (ECB) 2N5088 BVEBo Min. hFE Vce (sat)
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100nA
160MHz
2N2925
2N3711
MPS3711
2N3860
4pF-92
100mA
2n3904 TO-92
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2N3904 TO-92 type
Abstract: 2n4401 Die RJE9018 2n3904 c33 2n3904 C37 mps8097 CBO 40V CEO 25V EBO 5V
Text: Transistors/Leaded Type USA/European Specification Models • TO-92 Package/NPN Type For General Purpose Small Signal Amplifiers P art No. P a ckage BV cbo M in. BV ceo Min. BV ebo Min. hFE • ! f ° @Vcs Min. Max. @ lc & V ce Max. V e rs a ti V sd sat Max.
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100nA
160MHz
2N2925
2N5232A
MPS8097
MPSA20
MPS8098
PN918
RJE9014C
RJE9018G
2N3904 TO-92 type
2n4401 Die
RJE9018
2n3904 c33
2n3904 C37
CBO 40V CEO 25V EBO 5V
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NPN CBO 40V CEO 25V EBO 5V
Abstract: MMST8598
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.
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OT-23)
200mA
SC-59/Japanese
SST1130
MMST1130
SST5088
MMST5088
100nA
50MHz
NPN CBO 40V CEO 25V EBO 5V
MMST8598
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25V7K
Abstract: 2N5220 MPS6512 MPS6513 MPS6514 MPS6515 MPS6520 MPS6521 MPS6530 MPS6531
Text: ROHM CO MOE LTD 7 ß 5 f l [m D DÜG32Ö0 I RHM 1 nasa mm* s * 7 ^ 7•-Ol . General Purpose Amplifiers and Switches Type 2N5220 MPS6512 MPS6513 MPS6514 MPS6515 MPS6520 MPS6521 Package BV cbo Bg.1 Min. TO-92 20V (EBC) TO-92 40V (EBC) TO-92 40V (EBC) TO-92
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2N5220
100nA
150mA
100MHz
100mA
MPS6512
250MHz
MPS6513
25V7K
MPS6514
MPS6515
MPS6520
MPS6521
MPS6530
MPS6531
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2M5087
Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
Text: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.
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100nA
200mA
2N2925
2N3711
MPS3711
2N3860
2N5088
160MHz
100mA
2M5087
2M4401
2N3904 A31
NPS3704
2N3904 A38
NPN CBO 40V CEO 25V EBO 5V
FN2222
2N3904 die
TO92 30v 800ma
500ma 40v pnp
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Untitled
Abstract: No abstract text available
Text: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers
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2N2925
100nA
2N3711
MPS3711
MPS-A65
100nA
100mA
100MHz
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SF126
Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
Text: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN
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SST4124
Abstract: SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking
Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0.951°-* 1 .9± 0.2 f> > 1.9± 0.2 0 .4 5 ± 0 .1 0 .9 5 0.95 ;0 . 9 5 0 . 9 5
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OT-23)
SC-59
SC-59/Japanese
-95-o
GD1D47S
No100mA
50MHz
SST4124
SST5086
SST5089
R2F SOT-23
marking c33
MMSTA70
SOT-23 R2C
r1a SOT23
SSTA13
R2C marking
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MARKING CODE R1C
Abstract: R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C
Text: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0 .9 5 1 °- * 1 .9 ± 0 .2 f> > 1.9± 0.2 0.45 ±0.1 0.95 0.95 ; 0.95 0.95
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PDF
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OT-23)
SC-59
SC-59/Japanese
-95-o
GD1D47S
00104A0
MARKING CODE R1C
R2F SOT-23
R1H MARKING CODE
1T1 SOT-23
MMST3904
MMST8598
SOT-23 MARKING R2X
SSTA29
R2C marking
SOT-23 R2C
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2n4494
Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
Text: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495
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OCR Scan
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T-27-Ã
2N3707
MPS3707
100nA
100/iA
2N3708
MPS3708
2N3709
MPS3709
2n4494
MPS3711
2N4495
PN2218
2N3711
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solitron transistors
Abstract: SOLITRON DEVICES
Text: SOLITRON DEVICES INC “4 / - ' tl v - ,„ • -Ä - - * - 8 3 6 8602 v . " «¿-" ' V1- SOLITRON DEVICES - c »F|fl3böbDa OaOD47t, 7 •• v ; ^ - : ' -• :W i m -1- " - - - - - - -i • -^ 61C 00476 INC. D POWER TRANSISTORS 2N3750 2N3751 2N3752
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PDF
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OaOD47t,
2N3750
2N3751
2N3752
O-111/1
2N3750
2N3751
solitron transistors
SOLITRON DEVICES
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marking r2k
Abstract: MMST8598 IC marking R2k marking A32 MMST2907 R2B Marking G5B 500ma 40v pnp
Text: Transistors/Surface Mounting Type • SST3 Package/PNP Type Application Pre Amp Part No. B V c e o V ; Ic (mA @lc & Vqe f r (MHz) Cob (pF) Marking BC807-25 45 500 160 400 1 00 m A /1V 150 6 G5B B11 BC857A 45 100 110 230 2 m A /'5 V 250 4.5 G3E A32 Min. ^FE
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OCR Scan
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BC807-25
BC857A
BC857B
BC858B
BCW29
BCW30
BCW61B
BCW61C
BCW68F
BCW68G
marking r2k
MMST8598
IC marking R2k
marking A32
MMST2907 R2B
Marking G5B
500ma 40v pnp
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T523
Abstract: EN4135 2SA1855 2SC483
Text: O rdering num ber: EN413S 2SA1855/2SC4837 No.4135 SAiYO PNP/NPN Epitaxial P lanar Silicon Transistors i 50V/4A Switing Applications A p p licatio n s •Power supplies, relay drivers, lamp drivers. F e a tu re s • Adoption of FBET and MBIT processes. • Large allowable collector dissipation.
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EN4135
2SA1855/2SC4837
2SA1855
7T17D7L
T523
EN4135
2SA1855
2SC483
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MPS3388
Abstract: 2N3783 MPSS172 A5T3904 SDMFL 2N1711 2N1893 2N3704 pn4227 MPS3704
Text: s L MICRODEVICES INC ~ 14 D lF | s D 4 f lû 3 b OODDDTÛ b ^ ~ D GENERAL PURPOSE AMPLIFIERS AND MEDIUM-SPEED SWITCHES TYPE 2N1711 CASE STYLE BVc b o bvCEO b v eb o 'CBO Min Min Min Max 75V .5 0 VI 7V 10nA @ 1 20 V 80 V 7V T05 VCB 9 60 V 20 35 75 100-300 40
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OCR Scan
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2N1711
PN1711
10mA/10V
150mA
2N1893
PN1693
10mA/10
PN3566
MPS3388
2N3783
MPSS172
A5T3904
SDMFL
2N3704
pn4227
MPS3704
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