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    Swissbit SE2000BC060GI-1TB1-1CB-STD

    Solid State Drives - SSD Industrial BGA PCIe SSD, E2000, 60 GB, 3D TLC Flash, -40C to +85C
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    Mouser Electronics SE2000BC060GI-1TB1-1CB-STD 10
    • 1 $56.5
    • 10 $51.51
    • 100 $42.81
    • 1000 $42.81
    • 10000 $42.81
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    Swissbit SE2600BC020GI-1TB1-1CB-STD

    Solid State Drives - SSD Industrial BGA PCIe SSD, E2600, 20 GB, 3D PSLC Flash, -40C to +85C
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    Mouser Electronics SE2600BC020GI-1TB1-1CB-STD 10
    • 1 $56.52
    • 10 $46.99
    • 100 $40.92
    • 1000 $40.92
    • 10000 $40.92
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    Swissbit SE2000BC120GI-1TB2-1CB-STD

    Solid State Drives - SSD Industrial BGA PCIe SSD, E2000, 120 GB, 3D TLC Flash, -40C to +85C
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    Mouser Electronics SE2000BC120GI-1TB2-1CB-STD 10
    • 1 $76.94
    • 10 $74.31
    • 100 $62.55
    • 1000 $62.55
    • 10000 $62.55
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    Swissbit SE2600BC040GI-1TB2-1CB-STD

    Solid State Drives - SSD Industrial BGA PCIe SSD, E2600, 40 GB, 3D PSLC Flash, -40C to +85C
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    Mouser Electronics SE2600BC040GI-1TB2-1CB-STD 10
    • 1 $78.2
    • 10 $65.51
    • 100 $61.06
    • 1000 $61.06
    • 10000 $61.06
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    Swissbit SE2000BC240GI-1TB4-1CB-STD

    Solid State Drives - SSD Industrial BGA PCIe SSD, E2000, 240 GB, 3D TLC Flash, -40C to +85C
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    Mouser Electronics SE2000BC240GI-1TB4-1CB-STD 10
    • 1 $108.91
    • 10 $97.8
    • 100 $94.75
    • 1000 $94.75
    • 10000 $94.75
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    CBS 922 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Newmarket Transistors

    Abstract: sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123
    Text: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu


    Original     		ST3042 ST3043 3N120 3N121 2N332 2N333 2N335 2N336 2N334 2SCl16 Newmarket Transistors sgs-ates transistors 2G108 2AC128-01 2N174 RCA 2BD124 2G381 2N109 2G271 2N123 PDF

    ALC020001

    Abstract: ALC020002 ALC020003 ALC020004 ALC02004 MB86687A CBS 922
    Text: Deviation List MB86687A Adaptation Layer Controller ALC September 1996 Version 6.0 FML/NPD/ALC/DL/1275 Identification Number ALC020001 Device MB86687A Adaptation Layer Controller ALC Category Rx Message Mode Buffer Allocation Summary If the last cell of an AAL5 packet is received with no data (i.e. pad and trailer) then a


    Original     		MB86687A FML/NPD/ALC/DL/1275 ALC020001 MB86687A D-63303 FML/NPD/ALC/DL/1277 ALC020001 ALC020002 ALC020003 ALC020004 ALC02004 CBS 922 PDF

    FUJITSU mosfet

    Abstract: sawtooth F9906 FPT-16P-M05 MB3789 MB3789PFV VT100
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27211-3E ASSP For Power Supply Applications BIPOLAR Switching Regulator Controller Supporting External Synchronization MB3789 • DESCRIPTION The MB3789 is a PWM (pulse width modulation) switching regulator controller supporting an external sync signal.


    Original     		DS04-27211-3E MB3789 MB3789 FUJITSU mosfet sawtooth F9906 FPT-16P-M05 MB3789PFV VT100 PDF

    F9906

    Abstract: FPT-16P-M05 MB3789 MB3789PFV VT100
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-27211-3E ASSP For Power Supply Applications BIPOLAR Switching Regulator Controller Supporting External Synchronization MB3789 • DESCRIPTION The MB3789 is a PWM (pulse width modulation) switching regulator controller supporting an external sync signal.


    Original     		DS04-27211-3E MB3789 MB3789 F9906 FPT-16P-M05 MB3789PFV VT100 PDF

    NE721S01

    Abstract: NE721S01-T1B x-band microwave fet
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE721S01 OUTLINE DIMENSIONS Units in mm • HIGH POWER GAIN: 7 dB TYP at 12 GHz PACKAGE OUTLINE S01 2.0 ± 0.2 • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz 2. • LG = 0.8 µm, WG = 330 µm 1 ± 2 0. • LOW PHASE NOISE:


    Original     		NE721S01 NE721S01 18e-12 1e-10 7e-12 055e-12 24-Hour NE721S01-T1B x-band microwave fet PDF

    NE721S01

    Abstract: nec d 882 p nec d 882 p datasheet NE721S01-T1 NE721S01-T1B CBS 922
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES NE721S01 OUTLINE DIMENSIONS Units in mm • HIGH POWER GAIN: 7 dB TYP at 12 GHz PACKAGE OUTLINE S01 • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz 2.0 ± 0.2 2. • LG = 0.8 µm, WG = 330 µm 1 ± DESCRIPTION


    Original     		NE721S01 NE721S01 18e-12 1e-10 7e-12 055e-12 24-Hour nec d 882 p nec d 882 p datasheet NE721S01-T1 NE721S01-T1B CBS 922 PDF

    str F 6256

    Abstract: bridge 3417 str g 6551 66212 D4413
    Text: Main Worldwide Sales Offices America's Headquarters & Western United States TelCom Semiconductor, Inc. 1300 Terra Bella Avenue Mountain View, CA 94043-1836 Shipping & Mailing P.O. Box 7267 Mountain View, CA 94039-7267 Tel: (650) 968-9241 Fax: (650) 967-1590


    Original     		I-20126 str F 6256 bridge 3417 str g 6551 66212 D4413 PDF

    ECS CBS 922

    Abstract: MB86687A SQFP208 v2 tpr4 MB86680
    Text: April 1996 Edition 2.0 DATA SHEET MB86687A Adaptation Layer Controller ALC Adaptation Layer Controller The FUJITSU MB86687A is an ATM protocol controller which autonomously terminates ATM Adaptation Layer standards Type 3/4 and Type 5. The device is ideally suited


    Original     		MB86687A MB86687A SQFP208 ECS CBS 922 SQFP208 v2 tpr4 MB86680 PDF

    6ES7307-1EA00-0AA0

    Abstract: schematic diagram offline UPS MINIATURE CIRCUIT BREAKER siemens SIEMENS, SITOP Power 40, 6EP1437-2BA10 schematic diagram online UPS siemens sitop power 40 siemens sitop power 20 6ep1436 3ba00 schematic diagram ac-dc welding inverter CIRCUIT Wiring Diagram s7-300 siemens Simoreg K 6RA22
    Text: Catalog KT 10.1 • 2004 Catalog KT 10.1 • 2004 SITOP Power supplies The information provided in this catalog contains descriptions or characteristics of performance which in case of actual use do not always apply as described or which may change as a result of


    Original     		E86060-K2410-A101-A5-7600 6ES7307-1EA00-0AA0 schematic diagram offline UPS MINIATURE CIRCUIT BREAKER siemens SIEMENS, SITOP Power 40, 6EP1437-2BA10 schematic diagram online UPS siemens sitop power 40 siemens sitop power 20 6ep1436 3ba00 schematic diagram ac-dc welding inverter CIRCUIT Wiring Diagram s7-300 siemens Simoreg K 6RA22 PDF

    N1702

    Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
    Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961


    OCR Scan     		2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 PDF

    MB8516

    Abstract: No abstract text available
    Text: MEMORY Registered 16 M x 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8516SR72CA-102/-103/-102L/-103L 168-pin, 4 Clock, 1-bank, based on 16 M x 4 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8516SR72CA is a fully decoded, CMOS Synchronous Dynamic Random Access Memory


    OCR Scan     		MB8516SR72CA-102/-103/-102L/-103L 168-pin, MB8516SR72CA MB81F64442C 168-pin F9812 MB8516 PDF

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES • OUTLINE DIMENSIONS Units HIGH POWER GAIN: 7 dB TYP at 12 GHz • NE721S01 PACKAGE OUTLINE S01 HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz • • Lg = 0.8 [im , Wg = 330 (im LOW PHASE NOISE: -110 dBc/Hz TYP at 11 GHz


    OCR Scan     		NE721S01 NE721S01 24-Hour PDF

    x band GaAs MESFET 261

    Abstract: No abstract text available
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES_ • Units in mm HIGH POWER GAIN: PACKAGE OUTLINE S01 HIGH OUTPUT POWER: • Lg = 0.8 nm, W g = 330 nm • OUTLINE DIMENSIONS 7 dB TYP at 12 GHz • • NE72is o i 15 dBm TYP at 12 GHz


    OCR Scan     		NE72is NE721S01 1e-14 6e-12 18e-12 1e-10 7e-12 055e-12 36e-10 x band GaAs MESFET 261 PDF

    LTA 703 S

    Abstract: EM 408 gps beta e 555
    Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET OUTLINE DIMENSIONS FEATURES • NE721S01 Units in mm HIGH POWER GAIN: P A C K A G E OUTLINE S 01 7 d B TYP at 12 GHz • HIGH OUTPUT POWER: • Lg = 0.8 |_im, W g = 330 |_im 15 dBm TYP at 12 GHz • LOW PHASE NOISE:


    OCR Scan     		NE721S01 NE721S01 24-Hour LTA 703 S EM 408 gps beta e 555 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY Unbuffered 2 M x 72 BIT SYNCHRONOUS DYNA MB8502S072AG-100/-84/-67 168-pin, 4 Clock, 1-bank, based on 2 M x 8 Bit SDRAMs with SPD DESCRIPTION The Fujitsu MB8502S072AG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM Module consisting of nine M B81117822A devices which organized as two banks of 2 M x 8 bits and a


    OCR Scan     		MB8502S072AG-100/-84/-67 168-pin, MB8502S072AG B81117822A 168-pin D-63303 F9802 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY Unbuffered 4 M x 72 BIT r .SY N<'Nil ^rlrÎONOUS> DYNAM IC RAWIIDIMM MB¡8?¡ndç¡072BZ-75/-1QÎ 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072BZ is afully decoded, CMOS Sy nc hro no usJDynam ic Random Access Memory SDRAM


    OCR Scan     		072BZ-75/-1QÎ 168-pin, MB8504S072BZ MB81F16822B 168-pin F9711 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY Unbuffered o rr 4 M x 7 2 B IT JO U S» D Y N A M IG R A M D IM M . s > rN C HI ME îft5t14!S072 JEG-1 100/- t/-67 ’’’ - H- - - - - - - - - - - - - - 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072EG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory


    OCR Scan     		ft5t14 t/-67 168-pin, MB8504S072EG MB81117822E 168-pin F9803 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 16 M x 7 2 BIT SYNCHRONOUS DYNAMIC RAM DIMM MB8516S072AG-100/-84/-67/-100L/-84L/-67L 168-pin, 4 Clock, 2-bank, based on 8 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8516S072AG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory


    OCR Scan     		MB8516S072AG-100/-84/-67/-100L/-84L/-67L 168-pin, MB8516S072AG MB81164842A 168-pin F9802 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY Unbuffered *4, k f ì - - m MlÎR.5FUS072* o 4 M x 72 BIT .s>rNCHR!ONC Ui DYINA kM DIMM 100/- 84/-67. ^ 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072AG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory


    OCR Scan     		US072* 168-pin, MB8504S072AG MB81117822A 168-pin F9802 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY Unbuffered 8 M x 72 BIT o o rr •Nili . SY N -/ill S D Y N A Ml C R M DI IVIM EElBIBBSSSi*072A(V 100/-84/-Ê¡7/-100LMÎ4L/-6 UfE: 168-pin, 4 Clock, 1-bank, based on 8 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8508S072AG is a fully decoded, CMOS Synchronous Dynamic Random Access Memory


    OCR Scan     		7/-100LM 168-pin, MB8508S072AG MB81164842A 168-pin F9802 PDF

    Untitled

    Abstract: No abstract text available
    Text: MEMORY Unbuffered 2 M x 72 BIT .s> 'N RONOU SDYNIAMIC RAM CIIMM Ml ¡02¡S072BZ-75/-10;2h 10. # • ’’’ .1 ” 1 m w i E \ v , v , ,v ,\W v , T l r , v , v , v , v , v , v , v , v , v , v , v , v ,v , v , v , v , v , v , v , v , v , v , v , \ \ \ \ \ \


    OCR Scan     		S072BZ-75/-10 168-pin, MB8502S072BZ MB81F16822B 168-pin D-63303 F9711 PDF

    MB814400A-70L

    Abstract: mbs14
    Text: June 1992 Edition 1.0 FUJITSU DATA SHEET MB8144ÛOA-60U-70U-80L CMOS 1M X 4 BIT FAST PAGE MODE LOW POWER DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Low Power Dynamic RAM The Fujitsu MB814400A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of


    OCR Scan     		MB8144 OA-60U-70U-80L MB814400A 024x4-bits MB814400A-60L/-70L/-80L MB814400A-ted SD-08287-001 MB814400A-70L mbs14 PDF

    2N7002DM

    Abstract: kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252
    Text: - p. <11 « P.02 Cover Page P. 29 DC-DC +1.25V P4 478 P.30 DC-DC +2.5V P. 31 Battery P. 32 Charger 1 of 2 P.03 P4 4 78 - PWR & GND (2 of 2) P.04 NB VT8703 - Host, CRT and TV Interface P.05 NB VT8703 - Memory Interface P.06 NB VT8703 - LVDS, (1 of 3) (2 of 3)


    OCR Scan     		P4M266 LTC17D9-9 N355V1 33VSB 2N7002DM kia 1117 3.3 VT8233 g3mx SMD M05 sot23 H052 W044 kia 1117 1.8 C85C39 c8252 PDF

    nas 1791

    Abstract: pdt 908 aot 110 opto TC351 toshiba facsimile tc35 T08HIBAINTEGRATED AETA TC35190F
    Text: ' — INTEGRATED CIRCUIT T08H IBA cmcs d ;c ;ta_ in teg r a te : TC 3 5 1 9 0 F T E C H N IC A L D A T A TC35190F SILICON V i d e o - d a t a C o e o r e s s l o n and E » p a n * l o n C o n t r o l l e r * of video-data ( VCEC 1988-11*03 . . . DESCRIPTION


    OCR Scan     		TC35190F TC35190F T08HIBA TC3B190F S9-29-20 nas 1791 pdt 908 aot 110 opto TC351 toshiba facsimile tc35 T08HIBAINTEGRATED AETA PDF