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    CDS PHOTO RESISTOR 15 K OHM Search Results

    CDS PHOTO RESISTOR 15 K OHM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    37-1409 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    37-2182 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    RAA239101A2GNP#HA0 Renesas Electronics Corporation Photoelectric Smoke Detector AFE IC Visit Renesas Electronics Corporation
    AA1A4M-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    AA1A3Q-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation

    CDS PHOTO RESISTOR 15 K OHM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KC778B

    Abstract: triac light switch C9014 C9014 Transistor PIR motion DETECTOR block DIAGRAM PIR SENSOR IS MOTION SENSOR PIR motion DETECTOR CIRCUIT DIAGRAM photo diode motion sensor four pin PIR sensor transistor c9014
    Text: KC778B Master PIR Control Chip MPCC Specification General : The MPCC has been designed for easy implementation of AC control functions that use a Passive Infra-Red (PIR) motion detector. Due to its high sensitivity and


    Original     		PDF KC778B 25sec KC778B IN4148 100uF 470uF 1N4148 triac light switch C9014 C9014 Transistor PIR motion DETECTOR block DIAGRAM PIR SENSOR IS MOTION SENSOR PIR motion DETECTOR CIRCUIT DIAGRAM photo diode motion sensor four pin PIR sensor transistor c9014

    Light-Dependent Resistor specification

    Abstract: photoresistor ldr 07 photoresistor LDR 03 photoresistor LDR 5mm 5mm ldr photo resistor LDR 07 CDS LDR 5mm photoresistors cadmium sulfide photoresistor LDR 03 PHOTO RESISTOR
    Text: TOKEN GENERAL PURPOSE RESISTORS General Purpose Wire Wound / Fusible Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong


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    Photoresistor rohs

    Abstract: photoresistor LDR 03 Light-Dependent Resistor specification cadmium sulfide photoresistor photoresistor LDR 1000
    Text: TOKEN GENERAL PURPOSE RESISTORS General Purpose Wire Wound / Fusible Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong


    Original     		PDF

    ZEPIR0AAS02MODG

    Abstract: PIR SENSOR IS MOTION SENSOR pir motion sensor PIR SENSOR stabilization Z8FS040BHH20EG infrared motion sensors lg LED monitor circuit diagram motion integrated circuits pir schematic pyroelectric infrared sensor
    Text: An Company ZEPIR0AAS02MODG ZMOTION Detection Module Product Specification PS028405-1010 Copyright 2010 by Zilog, Inc. All rights reserved. www.zilog.com ZMOTION™ Detection Module Product Specification Warning: DO NOT USE IN LIFE SUPPORT LIFE SUPPORT POLICY


    Original     		PDF ZEPIR0AAS02MODG PS028405-1010 ZEPIR0AAS02MODG PIR SENSOR IS MOTION SENSOR pir motion sensor PIR SENSOR stabilization Z8FS040BHH20EG infrared motion sensors lg LED monitor circuit diagram motion integrated circuits pir schematic pyroelectric infrared sensor

    motion DETECTOR CIRCUIT DIAGRAM

    Abstract: motion DETECTOR CIRCUIT DIAGRAM for light ACTIVE INFRARED MOTION DETECTOR motion DETECTOR Photocell CIRCUIT DIAGRAM PIR SENSOR IS MOTION SENSOR motion DETECTOR light CIRCUIT DIAGRAM Z8FS040ASB20SG motion DETECTOR block DIAGRAM pir motion sensor MOTION DETECTOR
    Text: ZEPIR0AAS01SBCG ePIR Motion Detection Zdots SBC Product Specification PS028402-1008 Copyright 2008 by Zilog®, Inc. All rights reserved. www.zilog.com ePIR™ Motion Detection Zdots® SBC Product Specification Warning: DO NOT USE IN LIFE SUPPORT LIFE SUPPORT POLICY


    Original     		PDF ZEPIR0AAS01SBCG PS028402-1008 motion DETECTOR CIRCUIT DIAGRAM motion DETECTOR CIRCUIT DIAGRAM for light ACTIVE INFRARED MOTION DETECTOR motion DETECTOR Photocell CIRCUIT DIAGRAM PIR SENSOR IS MOTION SENSOR motion DETECTOR light CIRCUIT DIAGRAM Z8FS040ASB20SG motion DETECTOR block DIAGRAM pir motion sensor MOTION DETECTOR

    planar transformer theory

    Abstract: MRF275G equivalent "100 6W" MRF275G RF transformer turn ratio FERROXCUBE VK200 AN211A VK200 RF TOROIDS Design Considerations Nippon capacitors
    Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz


    Original     		PDF MRF275G/D MRF275G planar transformer theory MRF275G equivalent "100 6W" MRF275G RF transformer turn ratio FERROXCUBE VK200 AN211A VK200 RF TOROIDS Design Considerations Nippon capacitors

    PGM1203

    Abstract: resistor color code 5W 47 ohm J ceramic resistor UL-492-2 PGM5526 5000w inverter FCR05 Helix Dark blue 1000.1 PGM5516 FCR06
    Text: TOKEN ELECTRONICS IND. CO., LTD. HONESTY PERFECTION SHARING Catalogue of General Resistors Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang,Taipei Hsien,Taiwan, R.O.C TEL: 886-2-2981 0109 FAX: 886-2-2988 7487 China: 3F South, Zhongxing Industry Bld.,


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    HAS2 cypress

    Abstract: APS2-FVD-06-003 SUN SPOT 300KR
    Text: Image Sensor CYIH1SM1000AA-HHCS Detailed Specification - ICD 1. Introduction 1.7 Handling Precautions 1.1 Scope This version of the ICD is the version generated after qualification campaign closure. This specification details the ratings, physical, geometrical,


    Original     		PDF CYIH1SM1000AA-HHCS HAS2 cypress APS2-FVD-06-003 SUN SPOT 300KR

    HAS2 cypress

    Abstract: STAR250 long range gold detector circuit diagram digital SUN SENSOR cmos detector space radiation BK7G18 psoc new projects 2011 RAD-HARD distance sensor STAR-1000 STAR250 star tracker AD03
    Text: CYIH1SM1000AA-HHCS Detailed Specification - ICD 1. Introduction 1.7 Handling Precautions 1.1 Scope This version of the ICD is the version generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, test- and


    Original     		PDF CYIH1SM1000AA-HHCS HAS2 cypress STAR250 long range gold detector circuit diagram digital SUN SENSOR cmos detector space radiation BK7G18 psoc new projects 2011 RAD-HARD distance sensor STAR-1000 STAR250 star tracker AD03

    ad0804

    Abstract: fuzzy logic library pic c code solar tracker vhdl code for fuzzy logic controller vhdl code for solar tracking Future scope of UART using Verilog of bidirectional dc motor solar tracker speed solar charge controller microcontroller Solar Charge Controller solar panel circuit diagram
    Text: Intelligent Solar Tracking Control System Implemented on an FPGA Third Prize Intelligent Solar Tracking Control System Implemented on an FPGA Institution: Institute of Electrical Engineering, Yuan Ze University Participants: Zhang Xinhong, Wu Zongxian, Yu Zhengda


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    NES 1004

    Abstract: 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106
    Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-30 CCD IMAGE SENSOR SOCS092 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TC285SPD-30 SOCS092 30Frame/s NES 1004 74AC244 EVM285SPD CCM TEXAS TP2104N3 1SS226 CM500 EL7156CS TC285SPD-30 TN2106

    planar transformer theory

    Abstract: johanson balun 868 w4-20 AN211A MRF275G VK200 rf power amplifier transistor with s-parameters
    Text: Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz


    Original     		PDF MRF275G/D MRF275G planar transformer theory johanson balun 868 w4-20 AN211A MRF275G VK200 rf power amplifier transistor with s-parameters

    TX285SPD

    Abstract: TX285SPD-31 NES 1004 31 CCM TEXAS 74AC244 CM500 EL7156CS TP2104 TX285 EL7156
    Text: TM 1004 x 1002 PIXEL IMPACTRON TX285SPD-31 CCD IMAGE SENSOR SOCS094 – JANUARY2006 • • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TX285SPD-31 SOCS094 JANUARY2006 30Frame/s TX285SPD TX285SPD-31 NES 1004 31 CCM TEXAS 74AC244 CM500 EL7156CS TP2104 TX285 EL7156

    Nippon capacitors

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz


    Original     		PDF MRF275G/D MRF275G MRF275G/D Nippon capacitors

    FillFactory

    Abstract: No abstract text available
    Text: NOII4SM6600A 6.6 Megapixel CMOS Image Sensor Features Description • 2210 H x 3002 (V) Active Pixels The IBIS4-6600 is a solid-state CMOS image sensor that integrates complete analog image acquisition, and a digitizer and digital signal processing system on a single chip. This image


    Original     		PDF NOII4SM6600A IBIS4-6600 NOII4SM6600A/D FillFactory

    planar transformer theory

    Abstract: w4-20 MRF275G AN211A VK200
    Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz


    Original     		PDF MRF275G/D MRF275G planar transformer theory w4-20 MRF275G AN211A VK200

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS


    Original     		PDF MRF275G

    TC285SPD-B0

    Abstract: Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor
    Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TC285SPD-B0 SOCS093 30Frame/s TC285SPD-B0 Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor

    74AC244

    Abstract: TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004
    Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TC285SPD-B0 SOCS093 30Frame/s 74AC244 TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    EL7158

    Abstract: EL7156
    Text: TC285 www.ti.com SOCS093A – JANUARY 2006 – REVISED JUNE 2010 1004 x 1002 PIXEL IMPACTRON CCD IMAGE SENSOR Check for Samples: TC285 FEATURES 1 • • • • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain


    Original     		PDF TC285 SOCS093A 30-Frame/s EL7158 EL7156

    Three bond

    Abstract: No abstract text available
    Text: TC285 www.ti.com SOCS093A – JANUARY 2006 – REVISED JUNE 2010 1004 x 1002 PIXEL IMPACTRON CCD IMAGE SENSOR Check for Samples: TC285 FEATURES 1 • • • • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain


    Original     		PDF TC285 SOCS093A 30-Frame/s Three bond

    j130 fet

    Abstract: MRF27SG
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Pow er F ield -E ffect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND


    OCR Scan     		PDF MRF275G MRF275G j130 fet MRF27SG

    AVERAGE QUASI PEAK AND PEAK DETECTOR

    Abstract: nixie tube circuit
    Text: • PRODUCT EMITTING DIODES LIGHT EMITTING DIODES APPLICATION NOTES Among photo semiconductor devices, the light emitting diode only exists as a P-N junction


    OCR Scan     		PDF