Untitled
Abstract: No abstract text available
Text: FS9168-015-DS-11_EN JAN 2013 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y REV. 1.1 Datasheet FS9168-015 FS9168 standard code for digital clinical thermometer application FS9168-015 FO Fo P R r R ro TU p ef e NE er rti ' en es ce O nl y Fortune Semiconductor Corporation
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FS9168-015-DS-11
FS9168-015
FS9168
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halleffect
Abstract: lt 719 LT 783 UGN 3075
Text: Data Sheet 27632.2* 3275 COMPLEMENTARY-OUTPUT HALL-EFFECT LATCH X Type UGN3275K latching Hall-effect sensors are bipolar integrated circuits designed for electronic commutation of brushless dc motors. They feature dual complementary outputs. The latches are
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UGN3275K
halleffect
lt 719
LT 783
UGN 3075
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AN1064
Abstract: CY14B256K
Text: CY14B256KA 256 Kbit 32K x 8 nvSRAM with Real Time Clock Features • ■ 256 Kbit nvSRAM ❐ 25 ns and 45 ns access times ❐ Internally organized as 32K x 8 (CY14B256KA) ❐ Hands off automatic STORE on power down with only a small capacitor ❐ STORE to QuantumTrap nonvolatile elements is initiated by
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CY14B256KA
CY14B256KA)
AN1064
CY14B256K
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CY14B256K
Abstract: No abstract text available
Text: CY14B256KA 256 Kbit 32K x 8 nvSRAM with Real Time Clock 256 Kbit (32K x 8) nvSRAM with Real Time Clock Features • ■ 256 Kbit nvSRAM ❐ 25 ns and 45 ns access times ❐ Internally organized as 32K x 8 (CY14B256KA) ❐ Hands off automatic STORE on power down with only a small
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CY14B256KA
CY14B256KA)
CY14B256K
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CY14B256K
Abstract: No abstract text available
Text: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)
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CY14B256KA
256-Kbit
256-Kbit
CY14B256KA)
CY14B256K
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CY14B256K
Abstract: No abstract text available
Text: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)
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CY14B256KA
256-Kbit
256-Kbit
CY14B256KA)
CY14B256K
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CY14B256K
Abstract: No abstract text available
Text: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)
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CY14B256KA
256-Kbit
256-Kbit
CY14B256KA)
CY14B256K
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Untitled
Abstract: No abstract text available
Text: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • ■ 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)
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CY14B256KA
256-Kbit
256-Kbit
CY14B256KA)
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CY14B256KA-SP45
Abstract: Electronic timer. - TA 25 CY14B256K
Text: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)
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CY14B256KA
256-Kbit
256-Kbit
CY14B256KA)
CY14B256KA-SP45
Electronic timer. - TA 25
CY14B256K
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AN1064
Abstract: CY14B256K
Text: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256 Kbit (32K x 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)
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CY14B256KA
256-Kbit
256-Kbit
CY14B256KA)
AN1064
CY14B256K
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CY14B256K
Abstract: No abstract text available
Text: CY14B256KA 256-Kbit 32 K x 8 nvSRAM with Real Time Clock 256-Kbit (32 K × 8) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 32 K × 8 (CY14B256KA)
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CY14B256KA
256-Kbit
256-Kbit
CY14B256KA)
CY14B256K
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A 27631
Abstract: 27631 1128 marking GL256N S29GL128N S29GL256N S29GL512N SA4871 SA417 24A000
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
27631A1
27631A1
A 27631
27631
1128 marking
GL256N
S29GL128N
S29GL256N
S29GL512N
SA4871
SA417
24A000
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A 27631
Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
27631A1
27631A1
A 27631
1128 marking
s29gl512
GL256N
S29GL128N
S29GL256N
S29GL512N
A24-A0
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Spansion S29GL256N90
Abstract: S29GL512N11 S29GL256N10 S29GL512NH GL512N TXI002 S29GL256N90
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Data Sheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
TBD--64-Ball
27631A0
Spansion S29GL256N90
S29GL512N11
S29GL256N10
S29GL512NH
GL512N
TXI002
S29GL256N90
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A 27631
Abstract: 27631 s29gl512 S29GLxxxN 1128 marking GL256N S29GL128N S29GL256N S29GL512N Spansion S29GL256N
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
27631A4
A 27631
27631
s29gl512
1128 marking
GL256N
S29GL128N
S29GL256N
S29GL512N
Spansion S29GL256N
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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jrm a55
Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Text: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.
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64/256K
RS232C-A
jrm a55
tip 0ff 0401 ANALOG
irf 5630
ko 224 4K tantalum capacitors jrm a45
irf 7408
bt 4840 pinout diagram
A9F7
29 INCH crt tv FBT pinout
chassis 3111 253 3266 2e
jrm A45
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castanet capacitor
Abstract: arcotronics castanet capacitor capacitor rse 104 arcotronics tantalum arcotronics 402 series capacitors
Text: N Arcotronics Castanet All-Tantalum Capacitors Series CA and CAE 47 juF - 1800 juF 125V - 6VDC -55°C to + 125°C This conveniently-packaged polar button unit em ploys a non-solid electrolyte, and h as a sintered tantalum anode. T h e anode is produ ced from a high ca p a cita n ce
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Untitled
Abstract: No abstract text available
Text: SC IEN TIFIC / M INI-C IRC UITS ^C ^Z D • f lO b f lf il l 000 143 1 34S * S C C su rfa ce -m o u n t T-74-09-0] Frequency M ixers Models LEVEL 7 LRMS-2D + 7dBm LO, up to + 1dBm RF com puter-autom ated perform ance data typical production unit / for ctata of other models consult factory
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T-74-09-0]
RMS-20
RMS-20,
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0P213
Abstract: OP113GS OP-113 0p413 OP113GP OP-213 OP-413 analog devices OP- DICE CHARACTERISTICS
Text: AN AL OG D E V I CE S INC 51E D A N ALO G D E V IC E S □ • QfilbfiOO D 0 3 b h 5 7 fiT3 ■ ANA - t - 19 -io L o w N o is e i l o w D r if t Single-Supply Operational Amplifier OP-113/0P-213/0P-413 FEATURES Single-Supply Operation Low Noise: 6 n V /V Hz @ 1 kHz
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D03bb27
OP-113/0P-213/0P-413
OP-113
OP-213
OP-413
OP213GP
OP213GS
OP213GBC
OP413AZ/883
14-Pin
0P213
OP113GS
0p413
OP113GP
analog devices OP- DICE CHARACTERISTICS
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A 27631 transistor
Abstract: 27631 A 27631 AP 27631 2763 LA 4224 2SC4224
Text: Ordering number: EN 2763 h SAW O No.2763 2SC4224 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications i Features . High breakdown voltage, high reliability . Fast switching speed tf:0.1us typ . Wide ASO . Adoption of MBIT process
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2SC4224
PWg30Ops
A 27631 transistor
27631
A 27631
AP 27631
2763
LA 4224
2SC4224
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Sprague Hall Effect
Abstract: 27631 A 27631 UGN-3131U gj hall effect hall 3131 3131H UGS-3131T Bipolar Hall UGS-3131U
Text: U G N -3131T U G N -3 131 U UGS-3131T 4J>SPRAGUE_ THE MARK OF RELIABILITY _ DATA SHEET 27631 ULTRA-SENSITIVE HALL EFFECT BIPOLAR SWITCHES FEATURES • • • • • • 4 .5 V to 24V O peration High R e lia b ility — No Moving Parts Constant O utput A m p litu d e
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UGN-3131T
UGN-3131U
UGS-3131T
Sprague Hall Effect
27631
A 27631
UGN-3131U
gj hall effect
hall 3131
3131H
UGS-3131T
Bipolar Hall
UGS-3131U
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WESTINGHOUSE transistor
Abstract: Westinghouse CO 8 westinghouse relay westinghouse transistors westinghouse semiconductor westinghouse power transistor 2N2761 2N2771 2N2770 westinghouse
Text: Westinghouse Therm al Characteristics Thermal resistance, 0 jc , #C /w a tt, max. .0.5 Power dissipation, P j at T c = 7 5 °C w atts, max. 200 Typical thermal drop, case to heat sink, ° C /w a tt.0.3
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2N2757-78+
30-ampere
for2N2760,
2N2766,
2N2772
2N2778.
C/2116/DB;
C/2117
WESTINGHOUSE transistor
Westinghouse CO 8
westinghouse relay
westinghouse transistors
westinghouse semiconductor
westinghouse power transistor
2N2761
2N2771
2N2770
westinghouse
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irt 1260
Abstract: MX7582
Text: 19-2763; Rev 1; 6/96 y M /X IA I C a lib ra te d 4 -C h a n n e l 1 2 -B it A D C _ Features ♦ ♦ ♦ ♦ ♦ ♦ CHIP SELECT, READ, and WRITE inputs are included for easy microprocessor interfacing without additional logic. 2-byte, 12-bit conversion data is provided over an 8-bit
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X7S82
MX7582
12-bit
100ns
10dnV.
irt 1260
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