Untitled
Abstract: No abstract text available
Text: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time
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PDF
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bq4850Y
512Kx8
304-bit
10-year
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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Original
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PDF
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bq4850Y
512Kx8
304-bit
10-year
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Untitled
Abstract: No abstract text available
Text: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time
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PDF
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bq4850Y
512Kx8
10-year
304-bit
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bq4830Y
Abstract: BQ4830YMA-85
Text: bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access ➤ Pin-compatible with industrystandard 32K x 8 SRAMs
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bq4830Y
32Kx8
10-year
144-bit
BQ4830YMA-85
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BQ4830YMA-85
Abstract: No abstract text available
Text: bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access ➤ Pin-compatible with industrystandard 32K x 8 SRAMs
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PDF
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bq4830Y
32Kx8
10-year
144-bit
BQ4830YMA-85
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bq4830Y
Abstract: BQ4830YMA-85
Text: bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access ➤ Pin-compatible with industrystandard 32K x 8 SRAMs
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Original
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PDF
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bq4830Y
32Kx8
10-year
144-bit
BQ4830YMA-85
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R-PDIP-T28
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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Original
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PDF
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bq4850Y
512Kx8
10-year
304-bit
R-PDIP-T28
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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bq4850Y
512Kx8
304-bit
10-year
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BD-961
Abstract: bq4850Y BQ4850YMA-85 BQ4850YMA-85N
Text: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time
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Original
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PDF
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bq4850Y
512Kx8
304-bit
10-year
BD-961
BQ4850YMA-85
BQ4850YMA-85N
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Untitled
Abstract: No abstract text available
Text: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time
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Original
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PDF
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bq4850Y
512Kx8
10-year
304-bit
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Untitled
Abstract: No abstract text available
Text: bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access ➤ Pin-compatible with industrystandard 32K x 8 SRAMs
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Original
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PDF
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bq4830Y
32Kx8
10-year
144-bit
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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Original
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PDF
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bq4850Y
512Kx8
304-bit
10-year
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BD-961
Abstract: No abstract text available
Text: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time
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Original
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PDF
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bq4850Y
512Kx8
10-year
304-bit
BD-961
|
Untitled
Abstract: No abstract text available
Text: bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with an integral accessible real-time
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Original
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PDF
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bq4850Y
512Kx8
10-year
304-bit
|
|
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4850Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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Original
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PDF
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bq4850Y
512Kx8
10-year
304-bit
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bq4010
Abstract: bq4010LY bq4010Y DIP-28
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED APRIL 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
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bq4010/Y/LY
SLUS116A
28-Pin
34-Pin
bq401BATCAP
536-bit
bq4010
bq4010LY
bq4010Y
DIP-28
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bq4830Y
Abstract: BQ4830YMA-85
Text: Not Recommended For New Designs bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access
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Original
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PDF
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bq4830Y
32Kx8
10-year
144-bit
BQ4830YMA-85
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access
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Original
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PDF
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bq4830Y
32Kx8
10-year
144-bit
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4830Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, crystal, power-fail control circuit, and battery ➤ Real-Time Clock counts seconds through years in BCD format ➤ RAM-like clock access
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Original
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PDF
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bq4830Y
32Kx8
10-year
144-bit
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bq4011
Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70 BQ4011YMA-70N
Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
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bq4011/Y/LY
SLUS118A
28-Pin
144-bit
bq4011
bq4011MA-150
bq4011MA-200
bq4011MA-70
bq4011Y
bq4011YMA-70
BQ4011YMA-70N
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Untitled
Abstract: No abstract text available
Text: bq4015/Y/LY www.ti.com SLUS125B – MAY 1999 – REVISED JANUARY 2010 512 k x 8 NONVOLATILE SRAM 5 V, 3.3 V Check for Samples: bq4015/Y/LY FEATURES 1 • • • • • • Data Retention for at least 10 Years Without Power Automatic Write-Protection During
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bq4015/Y/LY
SLUS125B
32-Pin
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Designs bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
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Original
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PDF
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bq4011/Y/LY
SLUS118A
28-Pin
144-bit
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bq4011
Abstract: bq4011MA-150 bq4011MA-200 bq4011MA-70 bq4011Y bq4011YMA-70
Text: bq4011/Y/LY www.ti.com SLUS118A – MAY 1999 – REVISED MAY 2007 32 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
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Original
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PDF
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bq4011/Y/LY
SLUS118A
28-Pin
144-bit
bq4011
bq4011MA-150
bq4011MA-200
bq4011MA-70
bq4011Y
bq4011YMA-70
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bq4015
Abstract: bq4015MA-70 bq4015MA-85 bq4015Y bq4015YMA-70 bq4015YMA-85
Text: bq4015/Y/LY www.ti.com SLUS125A – MAY 1999 – REVISED MAY 2007 512 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
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Original
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PDF
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bq4015/Y/LY
SLUS125A
32-Pin
304-bit
bq4015
bq4015MA-70
bq4015MA-85
bq4015Y
bq4015YMA-70
bq4015YMA-85
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