Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CELLULAR PHONE AMPLIFIER POWER CONTROL TRANSISTOR Search Results

    CELLULAR PHONE AMPLIFIER POWER CONTROL TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    CELLULAR PHONE AMPLIFIER POWER CONTROL TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF2131

    Abstract: TA0013 trw rf transistor HBT transistor
    Text: TA0013   TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier        RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on revolutionary HBT Heterojunction Bipolar Transistor technology.


    Original     		PDF TA0013 RF2131: 824MHz 849MHz 420mA 16-lead RF2131 Bm/30kHz, TA0013 trw rf transistor HBT transistor

    RF2108

    Abstract: cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011
    Text: TA0011  TA0011 RF2108: A Linear, High Efficiency, HBT, CDMA Power Amplifier         RF Micro Devices introduces a new linear power amplifier for CDMA applications based on their HBT Heterojunction Bipolar Transistor technology. This power


    Original     		PDF TA0011 RF2108: 29dBm 16-lead RF2108 27dBm cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011

    Untitled

    Abstract: No abstract text available
    Text: TARGET DATA SHEET ECM051 4 X 4 mm Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM051 is a 10 signal pin 4 X 4 mm dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide Heterojunction Bipolar Transistor HBT process. It is optimized for cellular CDMA (digital) and AMPS


    Original     		PDF ECM051 ECM051 SS-000505-000

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    1658 NEC

    Abstract: SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2003 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF PX10020EJ08V0PF 1658 NEC SW SPDT FRS transceiver SW-SPDT upc8112tb 2SC5288 NE52418 RF basics NE5510279A discrete LNA D

    smps control ic LED driver

    Abstract: cellular phone amplifier power control transistor 4.8v rechargeable NiMh CAR SMPS ic TL074 low power management integrated circuits 24v 5 amp smps Cellular GSM, PDC, DAMPS car battery charger 48V SMPS BATTERY CHARGER
    Text: THE COMPLETE POWER MANAGEMENT IC SOLUTIONS FOR WIRELESS TERMINALS Battery 2000 European Conference Laurent JAMET Marketing Manager Wireless Communication Division STMicroelectronics [email protected]  POWER MANAGEMENT INTEGRATED CIRCUITS FOR PORTABLE EQUIPMENT


    Original     		PDF CDMA2000) 200mA 100mA 350mA smps control ic LED driver cellular phone amplifier power control transistor 4.8v rechargeable NiMh CAR SMPS ic TL074 low power management integrated circuits 24v 5 amp smps Cellular GSM, PDC, DAMPS car battery charger 48V SMPS BATTERY CHARGER

    trw rf transistor

    Abstract: RF2131 TA0013 trw RF POWER TRANSISTOR
    Text: TA0013   TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier         operated applications, the power-added or total efficiency is extremely important. Sixty percent total efficiency for a two-stage, 25dB gain AMPS/ETACS


    Original     		PDF TA0013 RF2131: RF2131 Bm/30kHz, trw rf transistor TA0013 trw RF POWER TRANSISTOR

    cdi schematics pcb

    Abstract: dc cdi schematic diagram cdi schematic HBT transistor ECM011 MCH185A101JK PAE1 ecshi
    Text: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency


    Original     		PDF ECM011 28dBm 16dBm ECM011 824MHz 849MHz AP-000513-000 AP-000516-000 SS-000398-000 cdi schematics pcb dc cdi schematic diagram cdi schematic HBT transistor MCH185A101JK PAE1 ecshi

    MCH185A101JK

    Abstract: ECM011 capacitor 6032
    Text: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency


    Original     		PDF ECM011 28dBm 16dBm ECM011 824MHz 849MHz AP-000513-000 AP-000516-000 SS-000398-000 MCH185A101JK capacitor 6032

    C0805C225K9RACTU

    Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003
    Text: HELP3TM Tri-band USCellular/Japan Cellular/IMT UMTS/WCDMA Power Amplifier Module Application Note HELP3TM Tri-band WCDMA Power Amplifier Module Rev 2 Relevant products • AWT6222 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar transistor HBT power amplifier module is designed


    Original     		PDF AWT6222 C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003

    trw rf transistor

    Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
    Text: TA0012   TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier         efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key


    Original     		PDF TA0012 RF2123: RF2123 16-lead trw rf transistor HBT transistor cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
    Text: TA0012   TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier         efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key


    Original     		PDF TA0012 RF2123: RF2123 16-lead trw RF POWER TRANSISTOR trw rf transistor TA0012 HBT transistor gsm cellular power amplifier trw rf transistors

    diode ring mixer

    Abstract: transistor for RF amplifier and mixer P1-11 RF2489 RF3404
    Text: RF3404 Preliminary 8 DUAL-BAND/TRI-MODE CDMA LOW NOISE AMPLIFIER/MIXER MODULE Typical Applications • CDMA Cellular/PCS Handsets Product Description 0.5 CDMAIF+ The RF3404 is a fully-functional, integrated dual-band downconverter module for tri-mode CDMA applications.


    Original     		PDF RF3404 RF3404 IS-98B P1-11 P1-11 diode ring mixer transistor for RF amplifier and mixer RF2489

    cellular phone amplifier power control transistor

    Abstract: ECM011 PAE1
    Text: PRELIMINARY DATA SHEET ECM011 Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Features Features Cellular Band CDMA/AMPS Quiescent Current Control Single 3.5V Supply for 3-Cell Ni or Li-Ion Battery 31.5dBm AMPS Power with 48% Efficiency 28dBm CDMA Power with 35% Efficiency


    Original     		PDF ECM011 28dBm 16dBm ECM011 824MHz 849MHz 849MHz, 824MHz, 836MHz, cellular phone amplifier power control transistor PAE1

    Xa3 TRANSISTOR

    Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
    Text: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


    Original     		PDF SXA-389 SXA-389 MPO-100136 016REF 118REF 041REF 015TYP EDS-102231 Xa3 TRANSISTOR 041R 267M3502104 MCH18 MMIC "SOT 89" marking

    diode BB102

    Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003G diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet

    3SK238

    Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,


    Original     		PDF ADE-A08-003E 3SK238 g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ

    HITACHI SMD TRANSISTORS

    Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
    Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,


    Original     		PDF ADE-A08-003E HITACHI SMD TRANSISTORS small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015

    Xa3 TRANSISTOR

    Abstract: MCH18 SXA-389 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z
    Text: SXA-389 SXA-389Z Product Description Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology


    Original     		PDF SXA-389 SXA-389Z SXA-389 AN-075 SXA-389B EDS-102231 Xa3 TRANSISTOR MCH18 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z

    a3bz

    Abstract: marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389B SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking
    Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent


    Original     		PDF SXA-389B SXA-389BZ SXA-389B AN-075 EDS-102915 a3bz marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking

    Untitled

    Abstract: No abstract text available
    Text: RF3404 Preliminary 8 DUAL-BAND/TRI-MODE CDMA LOW NOISE AMPLIFIER/MIXER MODULE Typical Applications • CDMA Cellular/PCS Handsets Product Description 0.5 CDMAIF+ The RF3404 is a fully-functional, integrated dual-band downconverter module for tri-mode CDMA applications.


    Original     		PDF RF3404 RF3404 IS-98B P1-11 P1-11

    MCH18

    Abstract: SXA-389B xa3b EL115
    Text: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


    Original     		PDF SXA-389B SXA-389B MPO-100136 016REF 118REF 041REF 015TYP EDS-102915 MCH18 xa3b EL115

    1206 philips

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification Variable gain RF predriver amplifier DESCRIPTION SA910 PIN CONFIGURATION o o The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low*profile, surface mount power


    OCR Scan     		PDF SA910 SA910 1206 philips