CGH5503
Abstract: CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB s 0934 RO4350B ATC600L 128-QAM
Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1
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CGH55030F1
CGH55030P1
CGH55030F1/CGH55030P1
CGH55030F1/CGH55030P1
CGH5503
CGH55
030F1
CGH5503
CGH55030
CGH55030P1
CGH55030-TB
s 0934
RO4350B
ATC600L
128-QAM
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PDF
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32QAM circuit
Abstract: CGH55030 CGH5503 CGH55030F1 CGH55030P1 CGH55030-TB 440166 ATC600L
Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1
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Original
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CGH55030F1
CGH55030P1
CGH55030F1/CGH55030P1
CGH55030F1/CGH55030P1
CGH5503
CGH55
030F1
32QAM circuit
CGH55030
CGH5503
CGH55030P1
CGH55030-TB
440166
ATC600L
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PDF
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32QAM circuit
Abstract: ATC600S 32QAM modulation CGH5503 CGH55030 CGH55030F1 CGH55030P1 CGH55030-TB
Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1
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Original
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CGH55030F1
CGH55030P1
CGH55030F1/CGH55030P1
CGH55030F1/CGH55030P1
CGH5503
CGH55
030F1
32QAM circuit
ATC600S
32QAM modulation
CGH5503
CGH55030
CGH55030P1
CGH55030-TB
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PDF
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RO4350B
Abstract: No abstract text available
Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1
|
Original
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CGH55030F1
CGH55030P1
CGH55030F1/CGH55030P1
CGH5503
CGH55
030F1
RO4350B
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PDF
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RO4350B
Abstract: No abstract text available
Text: CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH55030F1/CGH55030P1 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55030F1/CGH55030P1
|
Original
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CGH55030F1
CGH55030P1
CGH55030F1/CGH55030P1
CGH5503
CGH55
030F1
RO4350B
|
PDF
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