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    Text: PRELIMINARY CGHV27150MP 150 W, 2300-2700 MHz, 50 V, GaN HEMT for LTE Cree’s CGHV27150MP is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27150MP ideal for 2.3 2.7 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


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