cgs resistor c7
Abstract: CGS C14 cgs resistor c14 Meggitt CGS 1 R/cgs resistor c7 CGS 1R0
Text: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS High Power Resistors TYPE C SERIES Meggitt CGS has manufactured the 'C' Series of Vitreous Enamelled Wirewound Resistors for more than
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RJK0328
Abstract: CSD16321 csd23201w10 BSC020N03LS CSD16321Q5 CSD16321Q5C CSD16322Q5C CSD16325Q5C CSD16407Q5C FDMS8670AS
Text: NexFETTM How To Design with Highly Efficient MOSFETs Just the Beginning Performance The Nex Generation 2nd Generation NexFETTM Power MOSFETs Trench MOSFETs 1st Generation Planar MOSFETs 1986 1996 2006 2016 Technology Comparison Trench Planar • Commercialized in 1980’s
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Si4624DY
Abstract: SiP12203 si4624 POWERPAK SO8 mosfet IC MOSFET QG AN607 AN608 SI4622DY Si4642DY
Text: VISHAY SILICONIX Power ICs and Power MOSFETs Application Note 836 Selection of MOSFETs for DC/DC Synchronous Buck Controllers: SiP12201 Single 10 A Controller and SiP12203 Triple Step Down Controller IC for 2 Synchronous and 1 Linear Power Rail Simon Foley
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SiP12201
SiP12203
02-Oct-08
Si4624DY
si4624
POWERPAK SO8
mosfet
IC MOSFET QG
AN607
AN608
SI4622DY
Si4642DY
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Untitled
Abstract: No abstract text available
Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either
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ISL6113,
ISL6114
FN6457
ISL6114
5m-1994.
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IRZ 40
Abstract: pci-e 98 pins pcb layout PCI-Express 2.0 X8 connector Pinout IRZ 46 graphic card circuit diagram ISL6113 l48 diode marking x16 MOSFET marking -ddr -sdram -rimm -sram -fla ISL6112 ISL6114
Text: ISL6113, ISL6114 Data Sheet September 25, 2007 FN6457.0 Dual Slot PCI-E Hot Plug Controllers Features The ISL6113, ISL6114 both target the PCI-Express Add-in card hot swap application. Together with a pair of N-Channel and P-Channel MOSFETs, and two sense resistors per slot, either
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ISL6113,
ISL6114
FN6457
ISL6114
5m-1994.
IRZ 40
pci-e 98 pins pcb layout
PCI-Express 2.0 X8 connector Pinout
IRZ 46
graphic card circuit diagram
ISL6113
l48 diode marking
x16 MOSFET marking -ddr -sdram -rimm -sram -fla
ISL6112
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k1206
Abstract: G200 LDMOS transistor 1W
Text: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
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K1206
1-877-GOLDMOS
1301-PTF
k1206
G200
LDMOS transistor 1W
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k1206
Abstract: cgs resistor c7 A123 transistor l2 k1206 220 r3
Text: e PTF 10120 120 Watts, 1.8–2.0 GHz LDMOS Field Effect Transistor Description The 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts minimum
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
k1206
cgs resistor c7
A123
transistor l2
k1206 220 r3
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AN749
Abstract: mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362
Text: Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
AN749
mrf154 amplifier
Fair-Rite bead
MC1723
MRF154
1N4148
1N5362
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mrf154 amplifier
Abstract: on 5269 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF154
MRF154
mrf154 amplifier
on 5269 transistor
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cgs resistor
Abstract: microstrip OZ 960 G200 20222
Text: PTF 102027 40 Watts, 925–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures
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220QBK-ND
1-877-GOLDMOS
1522-PTF
cgs resistor
microstrip
OZ 960
G200
20222
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k1206
Abstract: k1206 220 r3 cgs resistor G200
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description The PTF 10125 is an internally matched 135–watt GOLDMOS FET intended for linear driver and final applications from 1.4 to 1.6 GHz such as DAB/DRB. It operates at 40% efficiency with 12.5 dB typical
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K1206
1-877-GOLDMOS
1522-PTF
k1206
k1206 220 r3
cgs resistor
G200
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smd capa
Abstract: p33k
Text: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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PD21120R6
PD21120R6
PCS6106TR
PCC103BCT
1/16W
smd capa
p33k
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OZ 960 S
Abstract: G200 resistor 220 ohm 20222
Text: PTF 102027 GOLDMOS Field Effect Transistor 40 Watts, 925–960 MHz Description The PTF 102027 is a 40–watt GOLDMOS FET intended for EDGE applications from 925 to 960 MHz. This device operates at 53% efficiency with 15 dB of gain typical. Full gold metallization ensures
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P5182-ND
220QBK-ND
1-877-GOLDMOS
1522-PTF
OZ 960 S
G200
resistor 220 ohm
20222
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Transistor 4733
Abstract: capacitor siemens 4700 35 BDS31314-6-452 CGS C14
Text: PRE-RELEASE PTF 10134* 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched common source N–channel enhancement–mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime
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P4525-ND
PC56106-ND
P220ECT-ND
LL2012-F2N7S
BDS31314-6-452
35VDC
1-877-GOLDMOS
1301-PTF
Transistor 4733
capacitor siemens 4700 35
BDS31314-6-452
CGS C14
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10134
Abstract: capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180
Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface
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35VDC
1-877-GOLDMOS
1522-PTF
10134
capacitor siemens 4700 35
BDS31314-6-452
transistor t 2180
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48 Ohms Resistors CGS
Abstract: PTF102003 600B microstrip resistor PCC103BCT
Text: 375D–03, STYLE 1 Package 20275 120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET PTF102003 Description Key Features The PTF102003 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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PTF102003
PTF102003
PCS6106TR
PCC103BCT
1/16W
48 Ohms Resistors CGS
600B
microstrip resistor
PCC103BCT
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10125
Abstract: G200 K1206 rf mosfet ericsson
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated
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K1206
1-877-GOLDMOS
1301-PTF
10125
G200
K1206
rf mosfet ericsson
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J120 MOSFET
Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
Text: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
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MRF175LU/D
MRF175LU
J120 MOSFET
J115 mosfet
AN211A
MRF175LU
VK200
MOSFET J140
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k1206
Abstract: RF Transistor 1500 MHZ
Text: PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS Field Effect Transistor Description • The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. Rated output power is 135 watts. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
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K1206
G-200,
1-877-GOLDMOS
1301-PTF
RF Transistor 1500 MHZ
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PCC103BCT
Abstract: 600B PD21120R6 smd transistor ne c2 microstrip resistor P10K
Text: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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PD21120R6
PD21120R6
PCC103BCT
1/16W
PCC103BCT
600B
smd transistor ne c2
microstrip resistor
P10K
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capicitor
Abstract: smd transistor 513 500 watts amplifier schematic diagram transistor SMD LOA G200 PCC103BNCT-ND smd L19
Text: PTF 10161 165 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description The PTF 10161 is an internally matched,165 watt GOLDMOS FET intended for large signal amplifier applications from 869 to 894 MHz. It typically operates with 50% efficiency and 16 db of gain. Nitride
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220QBK-ND
1-877-GOLDMOS
1522-PTF
capicitor
smd transistor 513
500 watts amplifier schematic diagram
transistor SMD LOA
G200
PCC103BNCT-ND
smd L19
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BDS31314-6-452
Abstract: Transistor 4733
Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface
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35VDC
1-877-GOLDMOS
1522-PTF
BDS31314-6-452
Transistor 4733
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts
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MRF157
MRF157
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
MRF154/D*
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